Patents by Inventor Farzad Houshmand
Farzad Houshmand has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240128061Abstract: Embodiments disclosed herein include a semiconductor processing tool. In an embodiment, the semiconductor processing tool comprises a pedestal, an annular separator over the pedestal to define a first domain within the annular separator and a second domain outside of the annular separator, a first gas inlet within the annular separator, and a second gas inlet outside of the annular separator.Type: ApplicationFiled: August 14, 2023Publication date: April 18, 2024Inventors: FARZAD HOUSHMAND, KELVIN CHAN, RUIYING HAO, WAYNE FRENCH
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Publication number: 20230124304Abstract: Embodiments include a gas distribution assembly for a semiconductor processing chamber. In an embodiment, the gas distribution assembly comprises a flow ratio controller (FRC). In an embodiment, a first line from the FRC goes to an ampoule, and a second line from the FRC goes to a main line. In an embodiment, a third line from the ampoule goes to the main line. In an embodiment, a mass flow meter is coupled to the main line.Type: ApplicationFiled: September 6, 2022Publication date: April 20, 2023Inventors: Kelvin Chan, RUIYING HAO, WAYNE FRENCH, FARZAD HOUSHMAND
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Publication number: 20220155689Abstract: Some embodiments include a method of depositing a photoresist onto a substrate in a processing chamber. In an embodiment, the method comprises flowing an oxidant into the processing chamber through a first path in a showerhead, and flowing an organometallic into the processing chamber through a second path in the showerhead. In an embodiment, the first path is isolated from the second path so that the oxidant and the organometallic do not mix within the showerhead. In an embodiment, the method further comprises that the oxidant and the organometallic react in the processing chamber to deposit the photoresist on the substrate.Type: ApplicationFiled: October 22, 2021Publication date: May 19, 2022Inventors: Farzad Houshmand, Wayne French, Anantha Subramani, Kelvin Chan, Lakmal Charidu Kalutarage, Mark Joseph Saly
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Patent number: 11315769Abstract: Plasma source assemblies comprising an RF hot electrode having a body and at least one return electrode spaced from the RF hot electrode to provide a gap in which a plasma can be formed. An RF feed is connected to the RF hot electrode at a distance from the inner peripheral end of the RF hot electrode that is less than or equal to about 25% of the length of the RF hot electrode.Type: GrantFiled: January 15, 2021Date of Patent: April 26, 2022Assignee: APPLIED MATERIALS, INC.Inventors: Kallol Bera, Anantha K. Subramani, John C. Forster, Philip A. Kraus, Farzad Houshmand, Hanhong Chen
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Publication number: 20220049350Abstract: In an embodiment, the a semiconductor processing tool is disclosed. In an embodiment, the semiconductor processing tool comprises a chamber, and a displaceable column that passes through a surface of the chamber. In an embodiment, the column comprises a base plate, an insulator layer over the base plate, a pedestal over the insulator layer, and an edge ring surrounding a perimeter of the ground plate, the insulator and the pedestal. In an embodiment, a fluidic path is provided between the edge ring and the pedestal.Type: ApplicationFiled: July 13, 2021Publication date: February 17, 2022Inventors: Farzad Houshmand, Anantha Subramani, Kelvin Chan
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Patent number: 11170982Abstract: Methods and apparatus for low angle, selective plasma deposition on a substrate. A plasma chamber uses a process chamber having an inner processing volume, a three dimensional (3D) magnetron with a sputtering target with a hollow inner area that overlaps at least a portion of sides of the sputtering target and moves in a linear motion over a length of the sputtering target, a housing surrounding the 3D magnetron and the sputtering target such that at least one side of the housing exposes the hollow inner area of the sputtering target, and a linear channel interposed between the housing and a wall of the process chamber.Type: GrantFiled: August 1, 2019Date of Patent: November 9, 2021Assignee: APPLIED MATERIALS, INC.Inventors: Anantha K. Subramani, Praburam Raja, Steven V. Sansoni, John Forster, Philip Kraus, Yang Guo, Prashanth Kothnur, Farzad Houshmand, Bencherki Mebarki, John Joseph Mazzocco, Thomas Brezoczky
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Publication number: 20210210312Abstract: Plasma source assemblies comprising a housing with an RF hot electrode having a body and a plurality of source electrodes extending vertically from the RF hot electrode toward the opening in a front face of the housing are described. Processing chambers incorporating the plasma source assemblies and methods of using the plasma source assemblies are also described.Type: ApplicationFiled: December 29, 2020Publication date: July 8, 2021Inventors: Anantha K. Subramani, Farzad Houshmand, Philip A. Kraus, Abhishek Chowdhury, John C. Forster, Kallol Bera
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Publication number: 20210166923Abstract: Plasma source assemblies comprising an RF hot electrode having a body and at least one return electrode spaced from the RF hot electrode to provide a gap in which a plasma can be formed. An RF feed is connected to the RF hot electrode at a distance from the inner peripheral end of the RF hot electrode that is less than or equal to about 25% of the length of the RF hot electrode.Type: ApplicationFiled: January 15, 2021Publication date: June 3, 2021Applicant: Applied Materials, Inc.Inventors: Kallol Bera, Anantha K. Subramani, John C. Forster, Philip A. Kraus, Farzad Houshmand, Hanhong Chen
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Patent number: 10903056Abstract: Plasma source assemblies comprising an RF hot electrode having a body and at least one return electrode spaced from the RF hot electrode to provide a gap in which a plasma can be formed. An RF feed is connected to the RF hot electrode at a distance from the inner peripheral end of the RF hot electrode that is less than or equal to about 25% of the length of the RF hot electrode.Type: GrantFiled: May 15, 2018Date of Patent: January 26, 2021Assignee: Applied Materials, Inc.Inventors: Kallol Bera, Anantha K. Subramani, John C. Forster, Philip A. Kraus, Farzad Houshmand, Hanhong Chen
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Publication number: 20210020484Abstract: Methods and apparatus for a PVD chamber are provided herein. In some embodiments, a selective PVD chamber includes a first housing surrounding a movable substrate support; a second housing adjacent the first housing; an opening disposed between the first housing and the second housing that partially exposes a top surface of the movable substrate support, wherein the opening includes a first curved side; and an elongate target disposed in the second housing to provide a stream of material flux from the elongate target into the first housing via the opening.Type: ApplicationFiled: June 26, 2020Publication date: January 21, 2021Inventors: Keith Miller, Farzad HOUSHMAND, Prasoon SHUKLA
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Patent number: 10879042Abstract: Plasma source assemblies comprising a housing with an RF hot electrode having a body and a plurality of source electrodes extending vertically from the RF hot electrode toward the opening in a front face of the housing are described. Processing chambers incorporating the plasma source assemblies and methods of using the plasma source assemblies are also described.Type: GrantFiled: January 24, 2017Date of Patent: December 29, 2020Assignee: Applied Materials, Inc.Inventors: Anantha K. Subramani, Farzad Houshmand, Philip A. Kraus, Abhishek Chowdhury, John C. Forster, Kallol Bera
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Publication number: 20200402769Abstract: Embodiments include a plasma processing tool that includes a processing chamber, and a plurality of modular microwave sources coupled to the processing chamber. In an embodiment, the plurality of modular microwave sources include an array of applicators that are positioned over a dielectric body that forms a portion of an outer wall of the processing chamber. The array of applicators may be coupled to the dielectric body. Additionally, the plurality of modular microwave sources may include an array of microwave amplification modules. In an embodiment, each microwave amplification module may be coupled to at least one of the applicators in the array of applicators. According to an embodiment, the dielectric body be planar, non-planar, symmetric, or non-symmetric. In yet another embodiment, the dielectric body may include a plurality of recesses. In such an embodiment, at least one applicator may be positioned in at least one of the recesses.Type: ApplicationFiled: July 6, 2020Publication date: December 24, 2020Inventors: Thai Cheng Chua, Farzad Houshmand, Christian Amormino, Philip Allan Kraus
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Patent number: 10707058Abstract: Embodiments include a plasma processing tool that includes a processing chamber, and a plurality of modular microwave sources coupled to the processing chamber. In an embodiment, the plurality of modular microwave sources include an array of applicators that are positioned over a dielectric body that forms a portion of an outer wall of the processing chamber. The array of applicators may be coupled to the dielectric body. Additionally, the plurality of modular microwave sources may include an array of microwave amplification modules. In an embodiment, each microwave amplification module may be coupled to at least one of the applicators in the array of applicators. According to an embodiment, the dielectric body be planar, non-planar, symmetric, or non-symmetric. In yet another embodiment, the dielectric body may include a plurality of recesses. In such an embodiment, at least one applicator may be positioned in at least one of the recesses.Type: GrantFiled: April 11, 2017Date of Patent: July 7, 2020Assignee: Applied Materials, Inc.Inventors: Thai Cheng Chua, Farzad Houshmand, Christian Amormino, Philip Allan Kraus
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Publication number: 20200051794Abstract: Methods and apparatus for low angle, selective plasma deposition on a substrate. A plasma chamber uses a process chamber having an inner processing volume, a three dimensional (3D) magnetron with a sputtering target with a hollow inner area that overlaps at least a portion of sides of the sputtering target and moves in a linear motion over a length of the sputtering target, a housing surrounding the 3D magnetron and the sputtering target such that at least one side of the housing exposes the hollow inner area of the sputtering target, and a linear channel interposed between the housing and a wall of the process chamber.Type: ApplicationFiled: August 1, 2019Publication date: February 13, 2020Inventors: ANANTHA K. SUBRAMANI, PRABURAM RAJA, STEVEN V. SANSONI, JOHN FORSTER, PHILIP KRAUS, YANG GUO, PRASHANTH KOTHNUR, FARZAD HOUSHMAND, BENCHERKI MEBARKI, JOHN JOSEPH MAZZOCCO, THOMAS BREZOCZKY
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Publication number: 20190353919Abstract: Multi-zone collimators and process chambers including multi-zone collimators for use with a multi-zone magnetron source are provided herein. In some embodiments, a multi-zone collimator for use with a multi-zone magnetron source, comprising a first collimator plate, a second collimator plate, wherein a first collimator zone having a first width is formed between the first collimator plate and the second collimator plate; and a third collimator plate, wherein a second collimator zone having a second width is formed between the second first collimator plate and the third collimator plate, wherein a length of each of the first, second and third collimator plates are different from each other.Type: ApplicationFiled: May 17, 2019Publication date: November 21, 2019Inventors: BENCHERKI MEBARKI, JOUNG JOO LEE, FARZAD HOUSHMAND, ANANTHA SUBRAMANI, KEITH MILLER, XIANMIN TANG, PRASHANTH KOTHNUR
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Publication number: 20190276931Abstract: Methods and apparatus for physical vapor deposition are provided herein. In some embodiments, an apparatus for physical vapor deposition (PVD) includes: a linear PVD source to provide a stream of material flux comprising material to be deposited on a substrate; and a substrate support having a support surface to support the substrate at a non-perpendicular angle to the linear PVD source, wherein the substrate support and linear PVD source are movable with respect to each other along an axis that is perpendicular to a plane of the support surface of the substrate support sufficiently to cause the stream of material flux to move over a working surface of the substrate disposed on the substrate support during operation.Type: ApplicationFiled: March 8, 2019Publication date: September 12, 2019Inventors: Bencherki Mebarki, Anantha K. Subramani, Joung Joo Lee, Farzad Houshmand, Kelvin Chan, Kenneth Starks, Xianmin Tang
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Publication number: 20180330927Abstract: Plasma source assemblies comprising an RF hot electrode having a body and at least one return electrode spaced from the RF hot electrode to provide a gap in which a plasma can be formed. An RF feed is connected to the RF hot electrode at a distance from the inner peripheral end of the RF hot electrode that is less than or equal to about 25% of the length of the RF hot electrode.Type: ApplicationFiled: May 15, 2018Publication date: November 15, 2018Inventors: Kallol Bera, Anantha K. Subramani, John C. Forster, Philip A. Kraus, Farzad Houshmand, Hanhong Chen
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Patent number: 10121655Abstract: Plasma source assemblies comprising a housing with an RF hot electrode and a return electrode are described. The housing includes a gas inlet and a front face defining a flow path. The RF hot electrode includes a first surface oriented substantially parallel to the flow path. The return electrode includes a first surface oriented substantially parallel to the flow path and spaced from the first surface of the RF hot electrode to form a gap. Processing chambers incorporating the plasma source assemblies and methods of using the plasma source assemblies are also described.Type: GrantFiled: November 16, 2016Date of Patent: November 6, 2018Assignee: APPLIED MATERIALS, INC.Inventors: Anantha K. Subramani, Kaushal Gangakhedkar, Abhishek Chowdhury, John C. Forster, Nattaworn Nuntaworanuch, Kallol Bera, Philip A. Kraus, Farzad Houshmand
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Publication number: 20180294143Abstract: Embodiments include a plasma processing tool that includes a processing chamber, and a plurality of modular microwave sources coupled to the processing chamber. In an embodiment, the plurality of modular microwave sources include an array of applicators that are positioned over a dielectric body that forms a portion of an outer wall of the processing chamber. The array of applicators may be coupled to the dielectric body. Additionally, the plurality of modular microwave sources may include an array of microwave amplification modules. In an embodiment, each microwave amplification module may be coupled to at least one of the applicators in the array of applicators. According to an embodiment, the dielectric body be planar, non-planar, symmetric, or non-symmetric. In yet another embodiment, the dielectric body may include a plurality of recesses. In such an embodiment, at least one applicator may be positioned in at least one of the recesses.Type: ApplicationFiled: April 11, 2017Publication date: October 11, 2018Inventors: Thai Cheng Chua, Farzad Houshmand, Christian Amormino, Philip Allan Kraus
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Publication number: 20170213701Abstract: Plasma source assemblies comprising a housing with an RF hot electrode having a body and a plurality of source electrodes extending vertically from the RF hot electrode toward the opening in a front face of the housing are described. Processing chambers incorporating the plasma source assemblies and methods of using the plasma source assemblies are also described.Type: ApplicationFiled: January 24, 2017Publication date: July 27, 2017Inventors: Anantha K. Subramani, Farzad Houshmand, Philip A. Kraus, Abhishek Chowdhury, John C. Forster, Kallol Bera