Abstract: Disclosed is a method for growing a high-quality heteroepitaxial ?-Ga2O3 crystal by specifically using low-pressure chemical vapor deposition (LPCVD) method in the field of chemical vapor deposition, wherein said method includes the process steps of; preparing the substrate having hexagonal surfaces cut in different directions with inclinations such that the inclination angle is in a range between 2° and 10°; physically carrying the vapor obtained from Gallium heated in the second zone to the pump/sample by means of Argon gas; driving oxygen into the system with a separate ceramic or refractory metal tube and vertically transferring it onto the surface of the sample directly over the substrate; creating the core layer of ?-Ga2O3 on the surface such that the ratio of Ga:O surface atoms on the growing surface is in a range between 10:1 and 1:10 so as to ensure that the surface atoms of Ga and O create the ?-Ga2O3 crystal on the heated substrate; growing the core region of ?-Ga2O3 at a thickness between 5 nm-200

Abstract: An example tunnel junction ultraviolet (UV) light emitting diode (LED) is described herein. The UV LED can include a mesa structure having at least one of: an n-doped bottom contact region, a p-doped region, and a tunnel junction arranged in contact with the p-doped region. Additionally, a geometry of the mesa structure can be configured to increase respective efficiencies of extracting transverse-electric (TE) polarized light and transverse-magnetic (TM) polarized light from the tunnel junction UV LED. The mesa structure can be configured such that an emitted photon travels less than 10 µm before reaching the inclined sidewall.

Abstract: An example tunnel junction ultraviolet (UV) light emitting diode (LED) is described herein. The UV LED can include a mesa structure having at least one of: an n-doped bottom contact region, a p-doped region, and a tunnel junction arranged in contact with the p-doped region. Additionally, a geometry of the mesa structure can be configured to increase respective efficiencies of extracting transverse-electric (TE) polarized light and transverse-magnetic (TM) polarized light from the tunnel junction UV LED. The mesa structure can be configured such that an emitted photon travels less than 10 ?m before reaching the inclined sidewall.

Abstract: Disclosed is a method for growing a high-quality heteroepitaxial ?-Ga2O3 crystal by specifically using low-pressure chemical vapor deposition (LPCVD) method in the field of chemical vapor deposition, wherein said method includes the process steps of; preparing the substrate having hexagonal surfaces cut in different directions with inclinations such that the inclination angle is in a range between 2° and 10°; physically carrying the vapor obtained from Gallium heated in the second zone to the pump/sample by means of Argon gas; driving oxygen into the system with a separate ceramic or refractory metal tube and vertically transferring it onto the surface of the sample directly over the substrate; creating the core layer of ?-Ga2O3 on the surface such that the ratio of Ga:O surface atoms on the growing surface is in a range between 10:1 and 1:10 so as to ensure that the surface atoms of Ga and O create the ?-Ga2O3 crystal on the heated substrate; growing the core region of ?-Ga2O3 at a thickness between 5 nm-200

Abstract: An example tunnel junction ultraviolet (UV) light emitting diode (LED) is described herein. The UV LED can include a mesa structure having at least one of: an n-doped bottom contact region, a p-doped region, and a tunnel junction arranged in contact with the p-doped region. Additionally, a geometry of the mesa structure can be configured to increase respective efficiencies of extracting transverse-electric (TE) polarized light and transverse-magnetic (TM) polarized light from the tunnel junction UV LED. The mesa structure can be configured such that an emitted photon travels less than 10 ?m before reaching the inclined sidewall.

Abstract: An example tunnel junction ultraviolet (UV) light emitting diode (LED) is described herein. The UV LED can include a mesa structure having at least one of: an n-doped bottom contact region, a p-doped region, and a tunnel junction arranged in contact with the p-doped region. Additionally, a geometry of the mesa structure can be configured to increase respective efficiencies of extracting transverse-electric (TE) polarized light and transverse-magnetic (TM) polarized light from the tunnel junction UV LED. The mesa structure can be configured such that an emitted photon travels less than 10 ?m before reaching the inclined sidewall.

Abstract: An example tunnel junction ultraviolet (UV) light emitting diode (LED) is described herein. The UV LED can include a mesa structure having at least one of: an n-doped bottom contact region, a p-doped region, and a tunnel junction arranged in contact with the p-doped region. Additionally, a geometry of the mesa structure can be configured to increase respective efficiencies of extracting transverse-electric (TE) polarized light and transverse-magnetic (TM) polarized light from the tunnel junction UV LED. The mesa structure can be configured such that an emitted photon travels less than 10 ?m before reaching the inclined sidewall.