Abstract: A novel near-IR emitting cationic silver chalcogenide quantum dot with a mixed coating wherein the coating comprises of at least 2 different types of materials and is capable of luminescence at the desired near IR bandwidth at wavelengths of 800-850 nm. The quantum dot is fabricated via an advantageous single-step, homogeneous, aqueous method at a low temperature resulting a near IR emitting semiconductor quantum dot with high Quantum Yield, high transfection with low toxicity. The quantum dots may be used in medical imaging, tumor detection, drug delivery and labeling as well as in quantum dot sensitized solar cells.

Abstract: A novel near-IR emitting cationic silver chalcogenide quantum dot with a mixed coating wherein the coating comprises of at least 2 different types of materials and is capable of luminescence at the desired near IR bandwidth at wavelengths of 800-850 nm. The quantum dot is fabricated via an advantageous single-step, homogeneous, aqueous method at a low temperature resulting a near IR emitting semiconductor quantum dot with high Quantum Yield, high transfection with low toxicity. The quantum dots may be used in medical imaging, tumor detection, drug delivery and labeling as well as in quantum dot sensitized solar cells.

Abstract: A novel near-IR emitting cationic silver chalcogenide quantum dot with a mixed coating wherein the coating comprises of at least 2 different types of materials and is capable of luminescence at the desired near IR bandwidth at wavelengths of 800-850 nm. The quantum dot is fabricated via an advantageous single-step, homogeneous, aqueous method at a low temperature resulting a near IR emitting semiconductor quantum dot with high Quantum Yield, high transfection with low toxicity. The quantum dots may be used in medical imaging, tumor detection, drug delivery and labeling as well as in quantum dot sensitized solar cells.