Abstract: The present disclosure provides an image sensor, which may include a driving layer, a negative electrode layer formed in the driving layer, a N-region layer formed above the negative electrode layer. The N-region layer includes multiple cylindrical structures formed of semiconductor materials. The image sensor may also include a light absorption layer formed above the N-region layer. The light absorption layer is composed of a multi-layer structure including a P-region layer formed using quantum dot semiconductor materials. The image sensor may further include a positive electrode layer formed above the light absorption layer and configured to receive incoming light signals.

Abstract: The present disclosure provides an adaptive adjustment circuit in a computer chip having a voltage-controlled oscillator (VCO) and a processor. The adaptive adjustment circuit comprises a frequency difference acquisition module to generate a frequency difference signal based on a first difference between an oscillation frequency of the VCO and a target frequency. The adaptive adjustment circuit also includes a power module to supply a working voltage to the VCO and the processor, adjust the working voltage based on the frequency difference signal, and supply the adjusted working voltage to the VCO and the processor.

Abstract: The present disclosure provides an adaptive adjustment circuit in a computer chip having a voltage-controlled oscillator (VCO) and a processor. The adaptive adjustment circuit comprises a frequency difference acquisition module to generate a frequency difference signal based on a first difference between an oscillation frequency of the VCO and a target frequency. The adaptive adjustment circuit also includes a power module to supply a working voltage to the VCO and the processor, adjust the working voltage based on the frequency difference signal, and supply the adjusted working voltage to the VCO and the processor.

Abstract: The present disclosure provides an image sensor, which may include a driving layer, a negative electrode layer formed in the driving layer, a N-region layer formed above the negative electrode layer. The N-region layer includes multiple cylindrical structures formed of semiconductor materials. The image sensor may also include a light absorption layer formed above the N-region layer. The light absorption layer is composed of a multi-layer structure including a P-region layer formed using quantum dot semiconductor materials. The image sensor may further include a positive electrode layer formed above the light absorption layer and configured to receive incoming light signals.