Patents by Inventor Fazhan Zhao

Fazhan Zhao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12119199
    Abstract: The present disclosure discloses a power device including at least one vacuum packaged unit structure. The unit structure comprises a silicon substrate (100) and an emitter (200), a light modulator (300) and a collector (400) formed on the silicon substrate (100). On the one hand, the unified silicon-based process is compatible with the existing commercial process, so that it is easy for integration, simple for manufacture, and low in cost; on the other hand, the light modulator (300) is introduced and formed on the silicon substrate by a silicon-based process, which enhances field emission efficiency of the emitter (200), offsets the inconsistency of distances between the tips of the emitters (200) and the collector (400) caused by unevenness of the emitters, and increases the process redundancy of the cold cathode emitter.
    Type: Grant
    Filed: January 20, 2021
    Date of Patent: October 15, 2024
    Assignee: INSTITUTE OF MICROELECTRONICS OF THE CHINESE ACADEMY OF SCIENCES
    Inventors: Fazhan Zhao, Jianhui Bu, Jiajun Luo
  • Publication number: 20220328275
    Abstract: The present disclosure discloses a power device including at least one vacuum packaged unit structure. The unit structure comprises a silicon substrate (100) and an emitter (200), a light modulator (300) and a collector (400) formed on the silicon substrate (100). On the one hand, the unified silicon-based process is compatible with the existing commercial process, so that it is easy for integration, simple for manufacture, and low in cost; on the other hand, the light modulator (300) is introduced and formed on the silicon substrate by a silicon-based process, which enhances field emission efficiency of the emitter (200), offsets the inconsistency of distances between the tips of the emitters (200) and the collector (400) caused by unevenness of the emitters, and increases the process redundancy of the cold cathode emitter.
    Type: Application
    Filed: January 20, 2021
    Publication date: October 13, 2022
    Applicant: INSTITUTE OF MICROELECTRONICS OF THE CHINESE ACADEMY OF SCIENCES
    Inventors: Fazhan ZHAO, Jianhui BU, Jiajun LUO
  • Patent number: 9536585
    Abstract: The present invention provides an improved SRAM memory cell based on a DICE structure, which comprises following structures: four inverter structures formed through arranging PMOS transistors and NMOS transistors in series, wherein the part between the drains of a PMOS transistor and an NMOS transistor serves as a storage node; each storage node controls the gate voltage of an NMOS transistor of the other inverter structure and of a PMOS transistor of another inverter structure; a transmission structure consisting of four NMOS transistors, whose source, gate and drain are respectively connected with a bit line/bit bar line, a word line and a storage node.
    Type: Grant
    Filed: May 28, 2014
    Date of Patent: January 3, 2017
    Assignee: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES
    Inventors: Mengxin Liu, Xin Liu, Fazhan Zhao, Zhengsheng Han
  • Publication number: 20160260474
    Abstract: The present invention provides an improved SRAM memory cell based on a DICE structure, which comprises following structures: four inverter structures formed through arranging PMOS transistors and NMOS transistors in series, wherein the part between the drains of a PMOS transistor and an NMOS transistor serves as a storage node; each storage node controls the gate voltage of an NMOS transistor of the other inverter structure and of a PMOS transistor of another inverter structure; a transmission structure consisting of four NMOS transistors, whose source, gate and drain are respectively connected with a bit line/bit bar line, a word line and a storage node.
    Type: Application
    Filed: May 28, 2014
    Publication date: September 8, 2016
    Inventors: Mengxin Liu, Xin Liu, Fazhan Zhao, Zhengsheng Han