Patents by Inventor Fe Alma Gladden

Fe Alma Gladden has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7145412
    Abstract: Electronic and optical (or photonic) devices with variable or switchable properties and methods used to form these devices, are disclosed. More specifically, the present invention involves forming layers of conductive material and dielectric material or materials with varying conductivity and indexes of refraction to form various electronic and optical devices. One such layer of adjustable material is formed by depositing epitaxial or reduced grain boundary barium strontium titanate on the C-plane of sapphire.
    Type: Grant
    Filed: August 24, 2001
    Date of Patent: December 5, 2006
    Assignee: n Gimat Co.
    Inventors: Andrew T. Hunt, Mark G. Allen, David Kiesling, Robert E. Schwerzel, Yongdong Jiang, Fe Alma Gladden, John Wegman, Zhiyong Zhao, Matthew Scott Vinson, J. Eric McEntyre, Scott Flanagan, Todd Polley, J. Stevenson Kenney
  • Patent number: 6986955
    Abstract: Epitaxial and reduced grain boundary materials are deposited on substrates for use in electronic and optical applications. A specific material disclosed is epitaxial barium strontium titanate (14) deposited on the C-plane of sapphire (12).
    Type: Grant
    Filed: August 2, 2001
    Date of Patent: January 17, 2006
    Assignee: nGimat Co.
    Inventors: Jerome Schmitt, George Guang-Ji Cui, Henry A. Luten, III, Fang Yang, Fe Alma Gladden, Scott Flanagan, Yongdong Jiang, Andrew Tye Hunt
  • Publication number: 20040066250
    Abstract: Electronic and optical (or photonic) devices with variable or switchable properties and methods used to form these devices, are disclosed. More specifically, the present invention involves forming layers of conductive material and dielectric material or materials with varying conductivity and indexes of refraction to form various electronic and optical devices. One such layer of adjustable material is formed by depositing epitaxial or reduced grain boundary barium strontium titanate on the C-plane of sapphire.
    Type: Application
    Filed: July 24, 2003
    Publication date: April 8, 2004
    Inventors: Andrew T Hunt, Mark G Allen, David Kiesling, Robert E Schwerzel, Yongdong Jiang, Fe Alma Gladden, John Wegman, Zhiyong Zhao, Matthew Scott Vinson, J Eric McEntyre, Scott Flanagan, Todd Polley, J Stevenson Kenney
  • Publication number: 20030228500
    Abstract: Epitaxial and reduced grain boundary materials are deposited on substrates for use in electronic and optical applications. A specific material disclosed is epitaxial barium strontium titanate (14) deposited on the C-plane of sapphire (12).
    Type: Application
    Filed: December 26, 2001
    Publication date: December 11, 2003
    Inventors: Jerome Schmitt, George Guang-Ji Cui, Henry A. Luten III, Fang Yang, Fe Alma Gladden, Scott Flanagan, Yongdong Jiang, Andrew Tye Hunt