Patents by Inventor Federico Corni

Federico Corni has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Process for manufacturing wafers usable in the semiconductor industry
    Patent number: 7524736
    Abstract: To manufacture a layer of semiconductor material, a first wafer of semiconductor material is subjected to implantation to form a defect layer at a distance from a first face; the first wafer is bonded to a second wafer, by putting an insulating layer present on the second wafer in contact with the first face of the first wafer. Then, hydrogen atoms are introduced into the first wafer through a second face at an energy such as to avoid defects to be generated in the first wafer and at a temperature lower than 600° C. Thereby, the first wafer splits into a usable layer, bonded to the second wafer, and a remaining layer disposed between the defect layer and the second face of the first wafer. Prior to bonding, the first wafer is subjected to processing steps for obtaining integrated components.
    Type: Grant
    Filed: December 1, 2006
    Date of Patent: April 28, 2009
    Assignee: STMicroelectronics S.r.l.
    Inventors: Giampiero Ottaviani, Federico Corni, Paolo Ferrari, Flavio Francesco Villa
  • Process for manufacturing wafers usable in the semiconductor industry
    Publication number: 20070155183
    Abstract: To manufacture a layer of semiconductor material, a first wafer of semiconductor material is subjected to implantation to form a defect layer at a distance from a first face; the first wafer is bonded to a second wafer, by putting an insulating layer present on the second wafer in contact with the first face of the first wafer. Then, hydrogen atoms are introduced into the first wafer through a second face at an energy such as to avoid defects to be generated in the first wafer and at a temperature lower than 600° C. Thereby, the first wafer splits into a usable layer, bonded to the second wafer, and a remaining layer disposed between the defect layer and the second face of the first wafer. Prior to bonding, the first wafer is subjected to processing steps for obtaining integrated components.
    Type: Application
    Filed: December 1, 2006
    Publication date: July 5, 2007
    Applicant: STMicroelectronics S.R.L.
    Inventors: Giampiero Ottaviani, Federico Corni, Paolo Ferrari, Flavio Villa