Abstract: An electrochemical energy storage device is provided. The device may include a solid-state anode layer. The device may comprise a solid-state electrolyte layer. Further, the device may comprise a solid-state cathode layer. At least two adjacent ones out of the solid-state anode layer, the solid-state electrolyte layer, and the solid-state cathode layer may form a solid-state single-crystal with varying chemical compositions between the related layers. The solid-state electrolyte layer may have an ionic conductivity at room temperature higher than 10?6 S/cm.

Abstract: Querying a knowledge graph database in which entity data characterizes entities represented by nodes, interconnected by edges, of a knowledge graph, and each edge represents one of a set of relationships between entities which is applicable to the entities represented by nodes interconnected by that edge. A graphical user interface for display by a user computer enables definition, in response to user input, of an atomic query which is associated with a floating graphical query object in the interface. The atomic query defines an input set of said nodes for the query, a relationship and an output set of nodes for the query. Graphical connector and graphical logical-operator objects in the interface are manipulatable by a user in relation to a plurality of the query objects to define a complex query by constructing a graphical representation of a desired logical combination of the query objects.

Abstract: An electrochemical energy storage device is provided. The device may include a solid-state anode layer. The device may comprise a solid-state electrolyte layer. Further, the device may comprise a solid-state cathode layer. At least two adjacent ones out of the solid-state anode layer, the solid-state electrolyte layer, and the solid-state cathode layer may form a solid-state single-crystal with varying chemical compositions between the related layers. The solid-state electrolyte layer may have an ionic conductivity at room temperature higher than 10?6 S/cm.

Abstract: Querying a knowledge graph database in which entity data characterizes entities represented by nodes, interconnected by edges, of a knowledge graph, and each edge represents one of a set of relationships between entities which is applicable to the entities represented by nodes interconnected by that edge. A graphical user interface for display by a user computer enables definition, in response to user input, of an atomic query which is associated with a floating graphical query object in the interface. The atomic query defines an input set of said nodes for the query, a relationship and an output set of nodes for the query. Graphical connector and graphical logical-operator objects in the interface are manipulatable by a user in relation to a plurality of the query objects to define a complex query by constructing a graphical representation of a desired logical combination of the query objects.

Abstract: This invention relates to an apparatus, system, and method for creating a high-k gate stack structure that includes a passivation layer. The passivation layer can be constructed from a deposition of silicon carbide. The silicon carbide provides robustness against oxidation, which can reduce the capacity of the stack. The silicon carbide is thermodynamically stable during the deposition process and results in a clean interface.

Abstract: A method of fabricating a resistive memory element having a layer structure includes: providing a substrate; depositing a first electrode on an upper surface of the substrate; forming a layer of confining material on an upper surface of the first electrode so as to define a cavity having a maximal lateral dimension that is less than 60 nm along a direction parallel to an average plane of the first electrode, the confining material having a thermal conductivity greater than 0.5 W/(m·K); depositing a resistively switchable material as an amorphous compound comprising carbon to fill the cavity; and depositing a second electrode on an upper surface of the resistively switchable material.

Abstract: This invention relates to an apparatus, system, and method for creating a high-k gate stack structure that includes a passivation layer. The passivation layer can be constructed from a deposition of silicon carbide. The silicon carbide provides robustness against oxidation, which can reduce the capacity of the stack. The silicon carbide is thermodynamically stable during the deposition process and results in a clean interface.

Abstract: A method of fabricating a resistive memory element having a layer structure includes: providing a substrate; depositing a first electrode on an upper surface of the substrate; forming a layer of confining material on an upper surface of the first electrode so as to define a cavity having a maximal lateral dimension that is less than 60 nm along a direction parallel to an average plane of the first electrode, the confining material having a thermal conductivity greater than 0.5 W/(m·K); depositing a resistively switchable material as an amorphous compound comprising carbon to fill the cavity; and depositing a second electrode on an upper surface of the resistively switchable material.

Abstract: A resistive memory element is provided having a layer structure. The layer structure includes two layers forming two electrically conductive electrodes, respectively, a resistively switchable material sandwiched between the two layers forming the two electrodes, and in electrical connection therewith, and a confining material. The resistively switchable material is laterally confined within the confining material, between the two layers forming the electrodes. The confining material is sufficiently electrically insulating for an electric signal applied between the two conductive electrodes to change a resistance state of the memory element in operation. The confining material has a thermal conductivity greater than 0.5 W/(m·K), and preferably greater than or equal to 30 W/(m·K). The resistively switchable material is an amorphous compound comprising carbon, which has a maximal lateral dimension, along a direction parallel to an average plane of the two layers forming the electrodes, that is less than 60 nm.

Abstract: A resistive memory element is provided having a layer structure. The layer structure includes two layers forming two electrically conductive electrodes, respectively, a resistively switchable material sandwiched between the two layers forming the two electrodes, and in electrical connection therewith, and a confining material. The resistively switchable material is laterally confined within the confining material, between the two layers forming the electrodes. The confining material is sufficiently electrically insulating for an electric signal applied between the two conductive electrodes to change a resistance state of the memory element in operation. The confining material has a thermal conductivity greater than 0.5 W/(m·K), and preferably greater than or equal to 30 W/(m·K). The resistively switchable material is an amorphous compound comprising carbon, which has a maximal lateral dimension, along a direction parallel to an average plane of the two layers forming the electrodes, that is less than 60 nm.