Abstract: A fingerprint collection device and a display panel are provided. The fingerprint collection device includes: a base substrate, a driving circuit layer, a first passivation layer, a photodiode, a second passivation layer, and an electrode layer. A first electrode portion is electrically connected to the photodiode through a second via. A second electrode portion is electrically connected to a first signal trace and a second signal trace through a third via and a fourth via to form a bridge structure. Since the third via, the fourth via, and the second via are formed in same process, one process can be saved.

Abstract: A pixel driving circuit and a display panel are provided. The pixel driving circuit includes a data writing module, a data conversion module, and a current driving module. The data writing module is electrically connected to a first node and configured to transmit a data signal to the first node. The data conversion module is electrically connected to the first node, a second node, and a modulation signal source, and configured to generate a current driving control signal, and to output the current driving control signal to the second node. The current driving module is electrically connected to the second node, a light-emitting control wire, and a light-emitting device, and configured to control the light-emitting device to emit light. An effective pulse of the current driving control signal has different pulse widths in different gray-scale states.

Abstract: An array substrate and a display panel are provided. By allowing a gate electrode layer between a first active layer and a second active layer to overlap the first active layer and the second active layer at least partially, respectively, an area occupied by the first active layer, the second active layer, and the gate electrode layer can be reduced, and a design area of sub-pixels can be increased, thereby improving an aperture ratio.

Abstract: The present disclosure provides a display panel and a display device. The display panel includes a thin film transistor; and further includes a substrate,; a first metal layer disposed on the substrate and including a gate of the thin film transistor; an active layer disposed on a side of the first metal layer away from the substrate and including an active portion of the thin film transistor; a spacer layer disposed on a side of the active layer away from the first metal layer and including a plurality of contact holes; a second metal layer disposed on a side of the spacer layer away from the active layer and including a source and a drain of the thin film transistor; an orthographic projection of the gate electrode on the substrate covers an orthographic projection of at least part of the contact holes on the substrate.

Abstract: Embodiments of the present disclosure disclose a driving substrate, a display panel, and a manufacturing method of the driving substrate. In the driving substrate, a first electrode is connected to a first thin film transistor; a photosensitive diode includes a first semiconductor layer and an intrinsic semiconductor layer sequentially disposed on the first electrode, the intrinsic semiconductor layer wraps the first semiconductor layer and the first electrode; and a second conductive layer is disposed on the photosensitive diode. The second conductive layer includes a second electrode, and the second electrode covers the photosensitive diode.

Abstract: A display panel and a manufacturing method thereof, and a display device are provided. The display panel includes a backlight module and an array substrate. The array substrate includes an insulation structure is located in the opening region. A first groove is defined at a side of the insulation structure away from the backlight module. A first insulation layer and a second insulation layer are filled in the first groove. The second insulation layer is located on a side of the first insulation layer close to the backlight module, and a refractive index of the second insulation layer is less than a refractive index of the first insulation layer.

Abstract: An array substrate and a manufacturing method thereof are provided. The array substrate includes a thin film transistor layer including a first thin film transistor and an infrared detection element disposed on a first side of the thin film transistor layer. The infrared detection element includes a first electrode, a light-absorbing layer, and a second electrode sequentially stacked, wherein the infrared detection element is electrically connected to the first thin film transistor, and wherein a material of the light-absorbing layer is microcrystalline silicon. A thickness and band gap of the microcrystalline silicon simultaneously fulfill a purpose of infrared detection.

Abstract: A thin-film transistor (TFT) having a vertical structure and an electronic device are provided. The TFT having the vertical structure includes an insulating substrate and an active layer disposed on the insulating substrate. The active layer includes a first conductive part, an active section, and a second conductive part which are stacked. An orthographic projection of the first conductive part on the insulating substrate partly overlaps an orthographic projection of the second conductive part on the insulating substrate. Therefore, contamination ions may be prevented from entering the active section from the insulating substrate during manufacturing processes of the TFT. Thus, reliability of performance of the TFT may be improved.

Abstract: A semiconductor device and an electronic device are provided. The semiconductor device includes an insulating substrate, and a non-planar layer disposed on the insulating substrate and including a non-planar structure. The non-planar structure includes a sidewall. An active pattern is configured with at least a part located on the sidewall of the non-planar structure. The active pattern includes a channel located on the sidewall. A ratio of a size of the non-planar structure in a thickness direction of the non-planar layer to a thickness of the active pattern is less than or equal to seven.

Abstract: An array substrate and a display panel are provided. The array substrate includes a substrate, an array layer, an inorganic insulation layer, a conductive electrode, a passivation layer, and a pixel electrode disposed in sequence. The array layer includes a source electrode and a drain electrode. A first via hole is defined in the array substrate. The first via hole penetrates the passivation layer and the inorganic insulation layer and exposes the drain electrode. The pixel electrode is connected to the drain electrode in the first via hole.

Abstract: The present application provides a display panel and a display device. An N-th auxiliary unit is arranged in a display area of the display panel. An output end of the N-th auxiliary unit is connected to an N-th scan line. By connecting the auxiliary unit arranged in the display area to the corresponding scan line, a falling edge of a scan signal transmitted in the scan line can have sharp falling or a rising edge of the scan signal can have sharp rising, which can alleviate a signal distortion problem caused by transmission delay in the display area.

Abstract: The present application provides a display panel and a display device. The display panel includes an array substrate, a color filter substrate, and a colloid layer. The array substrate includes a thin film transistor layer and a passivation layer. The passivation layer includes at least one first connection element. The color filter substrate is disposed opposite to the array substrate. The colloid layer is arranged between the passivation layer and the color filter substrate, the colloid layer is connected to the first connection element, and the colloid layer and the first connection element couple the array substrate to the color filter substrate.

Abstract: The present application discloses a gate drive circuit and a display device. The gate drive circuit includes a plurality of cascaded gate drive units, in which one of the gate drive units includes a first layout, an input module and a pull-up module. By receiving a potential changeable signal by the gate of a first transistor or the gate of a second thin-film transistor, it can alleviate or avoid current leakage caused when a first node keeps at a same voltage level for a long time, thereby improving the stability of the potential of the first node.

Abstract: The present application discloses a display panel and an electrical terminal. The display panel includes: an underlay; an array driver layer located on the underlay and including a gate electrode layer and a source and drain electrode layer; a signal line including an adaptor portion located in the non-display region, wherein the adaptor portion includes a first wire section disposed in a same layer with the gate electrode layer, a second wire section disposed in a same layer with the source and drain electrode layer, and a bridge portion electrically connected to the first wire section and the second wire section; wherein the first wire section, the second wire section, and the bridge portion are disposed in different layers.

Abstract: An array substrate and a display panel are disclosed. The array substrate includes an underlay, a seed layer disposed on one side of the underlay, and a first metal layer disposed on one side of the seed layer and away from the underlay, wherein the first metal layer directly contacts the seed layer. The present application utilizes the seed layer directly contacting the first metal layer to induce crystallization of the first metal layer, so that the first metal layer is formed with larger grains, fewer grain boundaries and less charge carrier scattering, and a resistivity of the first metal layer is decreased.

Abstract: An array substrate is disclosed. The array substrate includes a semiconductor layer integrated with a PIN photoelectric diode and an active area. The PIN photoelectric diode includes a P-type semiconductor area, an N-type semiconductor area, and an I-type semiconductor area defined between the P-type semiconductor area and the N-type semiconductor area. A gate electric current is introduced at a location corresponding to the I-type semiconductor area, so as to enhance light sensitivity.

Abstract: A gate drive circuit and a display panel are provided. A pull-up module and a pull-down module of the gate drive circuit output a constant-voltage high potential to a second node, a third node, and a n-th stage gate drive signal through a P-type thin film transistor and output constant-voltage low potential through a N-type thin film transistor to the second node, the third node, and an n-th gate drive signal, thereby improving the stability of the output signal of the thin film transistor connected to the gate drive circuit and the key node.

Abstract: Provided is an aqueous redox flow battery comprising a positive electrode, a negative electrode, a posolyte chamber containing a posolyte, a negolyte chamber containing a polyoxometalate as a negolyte, and a separator disposed between the posolyte chamber and the negolyte chamber, wherein the polyoxometalate has a conductivity of 65 mS cm?1 or more at ?20° C., and the aqueous redox flow battery has a power density of 250 mW cm?2 or more at ?20° C.

Abstract: In an array substrate of the present invention, only two insulating layers are arranged on a planarization layer. Compared with conventional techniques that require at least four insulating layers arranged on the planarization layer, a number of the insulating layers arranged on the planarization layer is reduced. Therefore, a number of photomasks is reduced in a manufacturing process of the array substrate, and the manufacturing process is simplified. The present invention also provides a manufacturing method of the array substrate, and a display panel.

Abstract: The present application discloses a gate driving circuit and a display panel. The gate driving circuit comprises a plurality of cascaded gate driving modules. A first driving signal can be output through a first output node, and at the same time, a second driving signal with a same phase as the first driving signal can be output through a second output node, and a gate driving sub-module and an in-phase output sub-module share the first output node and a pull-down node, which simplifies a circuit topology of the gate driving circuit.