Patents by Inventor Fei AI

Fei AI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230176410
    Abstract: The present application provides a display panel and a display device. The display panel includes an array substrate, a color filter substrate, and a colloid layer. The array substrate includes a thin film transistor layer and a passivation layer. The passivation layer includes at least one first connection element. The color filter substrate is disposed opposite to the array substrate. The colloid layer is arranged between the passivation layer and the color filter substrate, the colloid layer is connected to the first connection element, and the colloid layer and the first connection element couple the array substrate to the color filter substrate.
    Type: Application
    Filed: June 23, 2020
    Publication date: June 8, 2023
    Inventors: Dewei SONG, Fei AI
  • Publication number: 20230154949
    Abstract: An array substrate and a display panel are provided. The array substrate includes a substrate, and a switch component and a light-sensing component adjacent to each other and disposed on the substrate. The switch component includes a first semiconductor disposed on the substrate. The light-sensing component includes a second semiconductor disposed on a same layer as the first semiconductor and a light-sensing electrode disposed on a side of the second semiconductor away from the substrate and connected to the second semiconductor. The light-sensing electrode and the second semiconductor constitute a Schottky knot.
    Type: Application
    Filed: March 11, 2021
    Publication date: May 18, 2023
    Applicant: WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Fuhsiung TANG, Fan GONG, Fei AI, Jiyue SONG
  • Publication number: 20230137922
    Abstract: An array substrate, a manufacturing process of an array substrate, and a display panel are disclosed. The array substrate includes a substrate and a photosensitive element. The photosensitive element is disposed on the substrate and includes a doped semiconductor layer, an intrinsic semiconductor layer, and a transparent electrode layer sequentially stacked. By improving an internal structure of the photosensitive element, light absorption by an incident interface of the intrinsic semiconductor layer can be increased, so that sensitivity of the photosensitive element is enhanced.
    Type: Application
    Filed: April 14, 2021
    Publication date: May 4, 2023
    Inventors: Fan GONG, Fei AI, Jiyue SONG
  • Publication number: 20230113882
    Abstract: An array substrate includes a substrate, a first metal layer and an active layer disposed on the substrate, an interlayer insulating layer, and a second metal layer. The first metal layer forms at least one first trace, the interlayer insulating layer is disposed on the first metal layer and the active layer, the second metal layer is disposed on the interlayer insulating layer, the interlayer insulating layer is formed with a first contact hole, and the second metal layer is connected to the first trace through the first contact hole. The first metal layer includes a conductive layer and a first protective layer stacked in sequence.
    Type: Application
    Filed: February 5, 2021
    Publication date: April 13, 2023
    Inventors: Tao MA, Yong XU, Wanglin WEN, Fei AI
  • Publication number: 20230112653
    Abstract: A light-sensitive sensor, an array substrate, and an electronic equipment are provided. The light-sensitive sensor includes a third metal layer, a second semiconductor layer, and a fourth metal layer. The third metal layer includes a second gate. The second semiconductor layer includes conductive portions, and the conductive portions are disposed at both ends of the second semiconductor layer. The fourth metal layer disposed on the second semiconductor layer, and the fourth metal layer includes a second source and a second drain.
    Type: Application
    Filed: August 14, 2020
    Publication date: April 13, 2023
    Inventors: Jianfeng Yuan, Fan Gong, Fei Ai, Jiyue Song, Dewei Song, Shiyu Long
  • Publication number: 20230094760
    Abstract: The embodiment of the present application discloses an array substrate, a display panel, and an electronic device. The array substrate includes a substrate and includes a control element; a first electrode is connected to the control element; a PIN diode is arranged on the first electrode, The PIN diode covers at least a part of the semiconductor layer of the control element and a part of the first electrode; a second conductive layer is arranged on the PIN diode, and the second conductive layer includes a second electrode.
    Type: Application
    Filed: August 5, 2020
    Publication date: March 30, 2023
    Applicant: WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Fei Ai, Jiyue Song, Dewei Song
  • Publication number: 20230028565
    Abstract: An array substrate, includes: a substrate, a first metal layer, a first buffer layer, and an active layer, a gate insulating layer, a second metal layer, a first insulating layer, a third metal layer and a first planarization layer. The first metal layer is electrically connected with the first doped area of the active layer through the bridge layer of the second metal layer. The third metal layer is electrically connected with the second doped area of the active layer. The array substrate of the present disclosure reduces a size of a thin film transistor by stacking the first metal layer, the second metal layer, and the third metal layer, thereby increasing pixel density. A display panel is also provided.
    Type: Application
    Filed: August 19, 2021
    Publication date: January 26, 2023
    Inventors: Yong XU, Fei AI
  • Patent number: 11557145
    Abstract: A photo sensor, a manufacturing method thereof, and a display panel are disclosed. By an ion implantation method forming an N-type region and a P-type region on a surface of polycrystalline silicon in a same layer respectively, compatibility with an ion implantation process is ensured, while covering a layer of an amorphous silicon photosensitive layer on the polycrystalline silicon enhances light absorption ability and can increase photo-generated electron-hole pairs. Furthermore, built-in electric fields exist on a horizontal direction and a vertical direction, which can more effectively separate the electron-hole pairs to enhance photo-generated electric current to improve accuracy of fingerprint recognition.
    Type: Grant
    Filed: April 2, 2020
    Date of Patent: January 17, 2023
    Assignee: WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Juncheng Xiao, Fei Ai, Jiyue Song
  • Publication number: 20220399383
    Abstract: An array substrate, a display panel, and an electronic device are provided. The array substrate includes a substrate, a first conductive layer including a first connection part, a fourth insulating layer disposed on the first conductive layer and provided with a second via, and a second conductive layer disposed on the fourth insulating layer and in the second via. The second conductive layer includes a second electrode, and the second electrode is connected to the first connection part through the second via.
    Type: Application
    Filed: November 24, 2020
    Publication date: December 15, 2022
    Applicant: WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Fei Ai, Jiyue Song, Dewei Song
  • Patent number: 11404594
    Abstract: A positive-intrinsic-negative (PIN) photosensitive device is provided. A p-type semiconductor layer composed of molybdenum oxide and having valence band energy between valence band energy of an intrinsic semiconductor layer and an upper electrode is used to replace a p-type semiconductor layer used in a conventional PIN photodiode, so that the PIN photodiode may be prepared without using borane gas. More, a difference between valence band energy of the p-type semiconductor layer and the intrinsic semiconductor layer is used to transport holes located in a valence band, so that it is unnecessary to use an active layer of a thin film transistor, so that the PIN photosensitive device may be stacked on the thin film transistor to reduce aperture ratio loss of a display panel.
    Type: Grant
    Filed: June 24, 2020
    Date of Patent: August 2, 2022
    Assignee: Wuhan China Star Optoelectronies Technology Co., Ltd.
    Inventors: Jianfeng Yuan, Fei Ai, Jiyue Song
  • Publication number: 20220190185
    Abstract: A positive-intrinsic-negative (PIN) photosensitive device is provided. A p-type semiconductor layer composed of molybdenum oxide and having valence band energy between valence band energy of an intrinsic semiconductor layer and an upper electrode is used to replace a p-type semiconductor layer used in a conventional PIN photodiode, so that the PIN photodiode may be prepared without using borane gas. More, a difference between valence band energy of the p-type semiconductor layer and the intrinsic semiconductor layer is used to transport holes located in a valence band, so that it is unnecessary to use an active layer of a thin film transistor, so that the PIN photosensitive device may be stacked on the thin film transistor to reduce aperture ratio loss of a display panel.
    Type: Application
    Filed: June 24, 2020
    Publication date: June 16, 2022
    Applicant: Wuhan China Star Optoelectronics Technology Co., Ltd.
    Inventors: Jianfeng YUAN, Fei AI, Jiyue SONG
  • Publication number: 20220149085
    Abstract: The present invention provides a TFT array substrate, a manufacturing method thereof, and a display panel thereof, wherein the thin-film transistor (TFT) array substrate is defined with a first area and a second area, and includes a substrate layer, wherein a first TFT is disposed on the substrate layer in the first area, and a second TFT is disposed on the substrate layer in the second area; and wherein the first TFT is a top-gate TFT, the second TFT is a bottom-gate TFT, and a material used for a source/drain layer of the first TFT is same as a material used for a gate layer of the second TFT. The present invention provides a TFT array substrate, which adopts a novel film structure design, so that a low temperature poly-silicon (LTPS) TFT and Oxide TFT provided thereon can have great compatibility in the design and manufacturing process.
    Type: Application
    Filed: December 30, 2019
    Publication date: May 12, 2022
    Inventors: Juncheng Xiao, Fei Ai, Guoheng Yin, Yong Xu
  • Patent number: 11315958
    Abstract: An array substrate and a method of manufacturing the same are provided. The array substrate includes a substrate, a plurality of thin film transistors disposed on the substrate, and a planarization layer covering the plurality of thin film transistors and filled a region defined by the plurality of thin film transistors and the substrate.
    Type: Grant
    Filed: September 18, 2019
    Date of Patent: April 26, 2022
    Assignee: Wuhan China Star Optoelectronics Technology Co., Ltd.
    Inventors: Fei Ai, Dewei Song, Guoheng Yin
  • Patent number: 11314121
    Abstract: A color filter substrate and a display device are provided. The color filter substrate includes a color filter base and a black matrix layer. The color filter base includes an active area and a frame area disposed beside the active area. The black matrix layer is disposed on the color filter substrate and positioned in the active area and a portion of the frame area. An edge of the frame area of the color filter base is provided with a groove.
    Type: Grant
    Filed: August 5, 2019
    Date of Patent: April 26, 2022
    Assignee: Wuhan China Star Optoelectronics Technology Co., Ltd.
    Inventors: Chaojun Zhao, Fei Ai, Shiyu Long
  • Publication number: 20220122370
    Abstract: A photo sensor, a manufacturing method thereof, and a display panel are disclosed. By an ion implantation method forming an N-type region and a P-type region on a surface of polycrystalline silicon in a same layer respectively, compatibility with an ion implantation process is ensured, while covering a layer of an amorphous silicon photosensitive layer on the polycrystalline silicon enhances light absorption ability and can increase photo-generated electron-hole pairs. Furthermore, built-in electric fields exist on a horizontal direction and a vertical direction, which can more effectively separate the electron-hole pairs to enhance photo-generated electric current to improve accuracy of fingerprint recognition.
    Type: Application
    Filed: April 2, 2020
    Publication date: April 21, 2022
    Inventors: Juncheng XIAO, Fei AI, Jiyue SONG
  • Patent number: 11307468
    Abstract: The present disclosure provides an array substrate and a manufacturing method of the array substrate. The method includes sequentially forming an active layer and an insulating layer on a substrate; forming a common electrode layer and a first metal layer on the insulating layer using a same photomask, wherein the common electrode layer includes touch electrodes; and forming a second metal layer on the pixel electrode layer, wherein the second metal layer includes touch signal lines, and the touch signal lines electrically are electrically connected to the touch electrodes.
    Type: Grant
    Filed: November 11, 2019
    Date of Patent: April 19, 2022
    Assignee: WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Yuan Yan, Yong Xu, Dewei Song, Fei Ai
  • Publication number: 20220059578
    Abstract: An array substrate and a method of manufacturing the same are provided. The array substrate includes a substrate, a plurality of thin film transistors disposed on the substrate, and a planarization layer covering the plurality of thin film transistors and filled a region defined by the plurality of thin film transistors and the substrate.
    Type: Application
    Filed: September 18, 2019
    Publication date: February 24, 2022
    Inventors: Fei AI, Dewei SONG, Guoheng YIN
  • Publication number: 20220004066
    Abstract: The present disclosure provides an array substrate and a manufacturing method of the array substrate. The method includes sequentially forming an active layer and an insulating layer on a substrate; forming a common electrode layer and a first metal layer on the insulating layer using a same photomask, wherein the common electrode layer includes touch electrodes; and forming a second metal layer on the pixel electrode layer, wherein the second metal layer includes touch signal lines, and the touch signal lines electrically are electrically connected to the touch electrodes.
    Type: Application
    Filed: November 11, 2019
    Publication date: January 6, 2022
    Inventors: Yuan Yan, Yong Xu, Dewei Song, Fei Ai
  • Publication number: 20210408080
    Abstract: The invention provides a thin film transistor (TFT) array substrate, a manufacturing method thereof, and a display panel. The TFT array substrate includes a substrate. A buffer layer and a TFT functional layer are sequentially disposed on the substrate. The TFT functional layer includes an active layer (Active), a gate insulating layer (GI), a gate layer (GE), an interlayer insulating layer (ILD), and a source-drain layer (SD) that are sequentially disposed on the buffer layer. An inorganic insulating layer is disposed on the source-drain layer, and a backside indium tin oxide (BITO) layer, a passivation layer (PV), and a top indium tin oxide (TITO) layer are sequentially disposed on the inorganic insulating layer. The invention provides the TFT array substrate. The TFT array substrate adopts a new functional layer structure design, which can effectively reduce production cost and cycle time of the TFT array substrate.
    Type: Application
    Filed: December 12, 2019
    Publication date: December 30, 2021
    Applicant: WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Fei AI, Dewei SONG
  • Publication number: 20210408068
    Abstract: An array substrate, a method of manufacturing the same, and a display device are provided. The array substrate includes a first active layer and a second active layer. A material of the first active layer comprises low temperature poly-silicon. A material of the second active layer comprises an oxide semiconductor. The first active layer and the second active layer are disposed at different layers and horizontally staggered.
    Type: Application
    Filed: November 14, 2019
    Publication date: December 30, 2021
    Applicant: WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Juncheng XIAO, Yong XU, Fei AI, Guoheng YIN