Abstract: A display panel and a manufacture method thereof are provided in embodiments of the present disclosure, and the display panel includes at least one photosensitive element each including a first electrode, a photosensitive semiconductor layer and a second electrode. The photosensitive semiconductor layer is disposed on the first electrode, and the second electrode is disposed on the photosensitive semiconductor layer. The photosensitive element further includes a connection insulation layer disposed between the second electrode and the photosensitive semiconductor layer. In the present application, leakage current in a dark state is lowered and an uniformity of different photosensitive elements is improved.

Abstract: An embodiment of the present application discloses an array substrate and a liquid crystal display panel. The array substrate uses a first barrier layer including a first aperture in an aperture region. The first barrier layer is at least correspondingly disposed in a thin film transistor disposing region and a gate driver on array circuit region. The first barrier layer is configured to block the alkaline cation from spreading along a direction to the active layer. Along a direction at a right angle from the substrate to the active layer, a depth by which the alkaline cation enters the first barrier layer is less than or equal to 20 ?.

Abstract: The present disclosure provides a vertical inverter and a semiconductor device including the vertical inverter, and the vertical inverter includes an insulation substrate, a first thin film transistor, and a second thin film transistor. By a layered arrangement of the first and second thin film transistors of the vertical inverter, more thin film transistors can be arranged within the limited space, so that the integration degree of the thin film transistors in the semiconductor device can be improved.

Abstract: A display panel is disclosed. The display panel includes a photosensitive device. The photosensitive device includes a barrier component and a second active pattern. The second active pattern includes a second lightly-doped part, a second intrinsic part surrounding the second lightly-doped part, and a second heavily-doped part surrounding the second intrinsic part. In a film thickness direction, the barrier component overlaps the second intrinsic part. A dark current of the photosensitive device is reduced by the second intrinsic part, thereby improving sensitivity.

Abstract: The present application provides a display panel in which transistors in an input pull-up module, a stage transfer output module, and an output pull-up module are provided as P-type low temperature polysilicon thin film transistors, and a transistor in an output pull-down module is provided as an N-type metal oxide thin film transistor.

Abstract: Embodiments of the present disclosure provide an array substrate and a display panel. The array substrate includes a first active layer, a gate electrode, a gate insulating layer, a second active layer, and a source/drain metal layer. The first active layer is connected in parallel with the second active layer through a conductor layer. Through an active layer structure with two layers in parallel, an on-state current and mobility of equivalent carriers of a device are effectively improved, and a comprehensive performance of the device is improved.

Abstract: A display panel is disclosed. The display panel includes a photosensitive device. The photosensitive device includes a barrier component and a second active pattern. The second active pattern includes a second lightly-doped part, a second intrinsic part surrounding the second lightly-doped part, and a second heavily-doped part surrounding the second intrinsic part. In a film thickness direction, the barrier component overlaps the second intrinsic part. A dark current of the photosensitive device is reduced by the second intrinsic part, thereby improving sensitivity.

Abstract: The present disclosure provides a vertical inverter and a semiconductor device including the vertical inverter, and the vertical inverter includes an insulation substrate, a first thin film transistor, and a second thin film transistor. By a layered arrangement of the first and second thin film transistors of the vertical inverter, more thin film transistors can be arranged within the limited space, so that the integration degree of the thin film transistors in the semiconductor device can be improved.

Abstract: An array substrate, a manufacturing method of the array substrate, and a display panel are provided. The array substrate includes a photosensitive sensor. The photosensitive sensor includes a photosensitive module and a storage module. The photosensitive module includes a photosensitive semiconductor layer. The storage module includes a first electrode plate and a second electrode plate. Wherein, the photosensitive semiconductor layer is disposed on an extension section of a drain electrode. A number of film layer of the photosensitive sensor is decreased, and photomasks are saved.

Abstract: The present disclosure provides an array substrate and a display panel. The array substrate includes a substrate, a thin film transistor layer, and a fingerprint identification component. Through horizontally disposing a switching element and a fingerprint identification element of the fingerprint identification component in the thin film transistor layer, the fingerprint identification element and the switching element can be manufactured with the thin film transistor layer at a same time, which can reduce a thickness of the panel, and a structure thereof is simple and not complicated.

Abstract: A manufacturing method for a liquid crystal display panel is disclosed and includes a step forming a refractive index gradient layer, a step forming a gate electrode insulation layer, a step forming a first interlayer dielectric layer, and a step forming a second interlayer dielectric layer. The step forming a refractive index gradient layer includes depositing a silicon nitride layer on a glass substrate, depositing the refractive index gradient layer on the silicon nitride layer. The refractive index gradient layer is silicon oxide, and includes a lower refractive index decremental layer and a lower refractive index constant layer. A refractive index of the decremental layer gradually decreases along a direction away from the silicon nitride layer, the lower refractive index constant layer is on the lower refractive index decremental layer. A reflection rate between light in film layers can be lowered to improve light transmittance of the display panel.

Abstract: A method of manufacturing an array substrate and an array substrate are provided. The method of manufacturing the array substrate includes forming a first metal layer on a substrate, wherein the first metal layer includes a plurality of first metal lines and a plurality of intermittent second metal lines, forming an interlayer dielectric insulating layer on the substrate and the first metal layer, and forming an intermittent data line on the interlayer dielectric insulating layer and the first metal layer, wherein the intermittent data line contacts the two ends of each of the intermittent second metal lines through the via holes.

Abstract: A display panel with enhanced waterproof ability is disclosed and includes a thin film transistor glass substrate, a color filter glass substrate, a frame sealing layer, and a liquid crystal layer. The color filter glass substrate is opposite to the thin film transistor glass substrate. The frame sealing layer and liquid crystal layer are disposed between the thin film transistor glass substrate and the color filter glass substrate. A planarization layer and a passivation layer are sequentially stacked on a surface of the thin film transistor glass substrate facing the frame sealing layer. An outer periphery of the planarization layer adjacent to the narrow bezel display panel is defined with a waterproof groove. The passivation layer extends to a portion adjacent to the waterproof groove without extending into the waterproof groove. Outer peripheries of the passivation layer and the display panel are at an interval to improve waterproof ability.

Abstract: The present disclosure provides a TFT, an array substrate, their manufacturing methods, and a display device. A source electrode and a drain electrode of the TFT are each of a multi-layered structure including a metal layer and a metal barrier layer. An a-Si active layer of the TFT is covered with an etch stop layer, via-holes penetrating through the etch stop layer are provided at positions corresponding to the source electrode and the drain, and the source electrode and the drain electrode are connected to the a-Si active layer through the via-holes.