Patents by Inventor Fei-Fan Chen
Fei-Fan Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240096800Abstract: A semiconductor device includes first and second active regions extending in parallel in a substrate, a plurality of conductive patterns, each conductive pattern of the plurality of conductive patterns extending on the substrate across each of the first and second active regions, and a plurality of metal lines, each metal line of the plurality of metal lines overlying and extending across each of the first and second active regions. Each conductive pattern of the plurality of conductive patterns is electrically connected in parallel with each metal line of the plurality of metal lines.Type: ApplicationFiled: November 27, 2023Publication date: March 21, 2024Inventors: Fei Fan DUAN, Fong-yuan CHANG, Chi-Yu LU, Po-Hsiang HUANG, Chih-Liang CHEN
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Publication number: 20200357612Abstract: A method of wafer processing includes supporting a wafer in a process chamber. The method further includes introducing a flow of a gaseous material through an inlet of the process chamber to process the wafer. The method further includes generating, between the inlet and the wafer, controllable forces acting in various directions on the gaseous material to spread the gaseous material inside the process chamber.Type: ApplicationFiled: July 24, 2020Publication date: November 12, 2020Inventors: Chien Kuo HUANG, Shih-Wen HUANG, Joung-Wei LIOU, Chia-I SHEN, Fei-Fan CHEN
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Patent number: 10741366Abstract: A wafer process chamber includes a wafer support in the wafer process chamber, the wafer support configured to support a wafer. The process chamber includes a gas diffuser unit within the wafer process chamber. The gas diffuser unit includes at least one controllable diffuser configured to generate one or more controllable forces acting in various directions on a gaseous material in a flow of the gaseous material introduced into the process chamber, to spread the gaseous material inside the process chamber. The gas diffuser unit includes a power source coupled to the at least one controllable diffuser, the power source configured to supply power to the at least one controllable diffuser to generate the one or more controllable forces. The gas diffuser unit includes a controller coupled to the power source, the controller configured to control the power supplied by the power source to the at least one controllable diffuser.Type: GrantFiled: June 25, 2018Date of Patent: August 11, 2020Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chien Kuo Huang, Shih-Wen Huang, Joung-Wei Liou, Chia-I Shen, Fei-Fan Chen
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Publication number: 20180308665Abstract: A wafer process chamber includes a wafer support in the wafer process chamber, the wafer support configured to support a wafer. The process chamber includes a gas diffuser unit within the wafer process chamber. The gas diffuser unit includes at least one controllable diffuser configured to generate one or more controllable forces acting in various directions on a gaseous material in a flow of the gaseous material introduced into the process chamber, to spread the gaseous material inside the process chamber. The gas diffuser unit includes a power source coupled to the at least one controllable diffuser, the power source configured to supply power to the at least one controllable diffuser to generate the one or more controllable forces. The gas diffuser unit includes a controller coupled to the power source, the controller configured to control the power supplied by the power source to the at least one controllable diffuser.Type: ApplicationFiled: June 25, 2018Publication date: October 25, 2018Inventors: Chien Kuo HUANG, Shih-Wen HUANG, Joung-Wei LIOU, Chia-I SHEN, Fei-Fan CHEN
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Patent number: 10011532Abstract: A system and method for generating and using plasma is provided. An embodiment comprises a plasma generating unit that comprises beta-phase aluminum oxide. A precursor material is introduced to the plasma generating unit and a plasma is induced from the precursor material. The plasma may be used to deposit or etch materials on a semiconductor substrate.Type: GrantFiled: February 2, 2015Date of Patent: July 3, 2018Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Fei-Fan Chen, Wen-Sheng Wu, Chien Kuo Huang
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Patent number: 10008367Abstract: A gas diffuser unit for a process chamber includes at least one controllable diffuser, a power source, and a controller. The at least one controllable diffuser is configured to generate controllable forces acting in various directions on a gaseous material in a flow of the gaseous material introduced into the process chamber, to spread the gaseous material inside the process chamber. The power source is coupled to the at least one controllable diffuser, and configured to supply power to the at least one controllable diffuser to generate the controllable forces. The controller is coupled to the power source and configured to control the power supplied by the power source to the at least one controllable diffuser.Type: GrantFiled: June 26, 2013Date of Patent: June 26, 2018Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chien Kuo Huang, Shih-Wen Huang, Joung-Wei Liou, Chia-I Shen, Fei-Fan Chen
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Publication number: 20150155185Abstract: A system and method for generating and using plasma is provided. An embodiment comprises a plasma generating unit that comprises beta-phase aluminum oxide. A precursor material is introduced to the plasma generating unit and a plasma is induced from the precursor material. The plasma may be used to deposit or etch materials on a semiconductor substrate.Type: ApplicationFiled: February 2, 2015Publication date: June 4, 2015Inventors: Fei-Fan Chen, Wen-Sheng Wu, Chien Kuo Huang
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Patent number: 8944003Abstract: A system and method for generating and using plasma is provided. An embodiment comprises a plasma generating unit that comprises beta-phase aluminum oxide. A precursor material is introduced to the plasma generating unit and a plasma is induced from the precursor material. The plasma may be used to deposit or etch materials on a semiconductor substrate.Type: GrantFiled: November 16, 2012Date of Patent: February 3, 2015Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Fei-Fan Chen, Wen-Sheng Wu, Chien Kuo Huang
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Publication number: 20150002017Abstract: A gas diffuser unit for a process chamber includes at least one controllable diffuser, a power source, and a controller. The at least one controllable diffuser is configured to generate controllable forces acting in various directions on a gaseous material in a flow of the gaseous material introduced into the process chamber, to spread the gaseous material inside the process chamber. The power source is coupled to the at least one controllable diffuser, and configured to supply power to the at least one controllable diffuser to generate the controllable forces. The controller is coupled to the power source and configured to control the power supplied by the power source to the at least one controllable diffuser.Type: ApplicationFiled: June 26, 2013Publication date: January 1, 2015Inventors: Chien Kuo HUANG, Shih-Wen HUANG, Joung-Wei LIOU, Chia-I SHEN, Fei-Fan CHEN
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Patent number: 8889435Abstract: A first embodiment is a method for semiconductor processing. The method comprises forming a component on a wafer in a chamber; determining a non-uniformity of the plasma in the chamber, the determining being based at least in part on the component on the wafer; and providing a material on a surface of the chamber corresponding to the non-uniformity. The forming the component includes using a plasma. The material can have various shapes, compositions, thicknesses, and/or placements on the surface of the chamber. Other embodiments include a chamber having a material on a surface to control a plasma uniformity.Type: GrantFiled: September 29, 2011Date of Patent: November 18, 2014Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Wen-Sheng Wu, Fei-Fan Chen, Chia-I Shen, Hua-Sheng Chiu
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Publication number: 20140141614Abstract: A system and method for generating and using plasma is provided. An embodiment comprises a plasma generating unit that comprises beta-phase aluminum oxide. A precursor material is introduced to the plasma generating unit and a plasma is induced from the precursor material. The plasma may be used to deposit or etch materials on a semiconductor substrate.Type: ApplicationFiled: November 16, 2012Publication date: May 22, 2014Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Fei-Fan Chen, Wen-Sheng Wu, Chien Kuo Huang
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Publication number: 20130084657Abstract: A first embodiment is a method for semiconductor processing. The method comprises forming a component on a wafer in a chamber; determining a non-uniformity of the plasma in the chamber, the determining being based at least in part on the component on the wafer; and providing a material on a surface of the chamber corresponding to the non-uniformity. The forming the component includes using a plasma. The material can have various shapes, compositions, thicknesses, and/or placements on the surface of the chamber. Other embodiments include a chamber having a material on a surface to control a plasma uniformity.Type: ApplicationFiled: September 29, 2011Publication date: April 4, 2013Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Wen-Sheng Wu, Fei-Fan Chen, Chia-I Shen, Hua-Sheng Chiu