Abstract: This invention relates to the technical field of harmonic elimination for ferromagnetic resonance for a voltage transformer (abbreviated as PT), in particular, to a harmonic elimination method for ferromagnetic resonance for an active resistance-matching voltage transformer based on PID-adjustment, including compiling a resistance matching algorithm; designing and building a harmonic elimination control system based on the PID control strategy; presetting an active resistance-matching strategy; designing an engineering scheme for placing resistors.

Abstract: A micro light-emitting diode structure is provided. The micro light-emitting diode structure includes an epitaxial layer. The micro light-emitting diode structure also includes a reflecting layer disposed on the epitaxial layer. The micro light-emitting diode structure further includes a patterned electrode layer disposed between the epitaxial layer and the reflecting layer. The patterned electrode layer is divided into a plurality of patterned electrode segments, and the patterned electrode segments are separated from each other. Moreover, the micro light-emitting diode structure includes a first-type electrode and a second-type electrode disposed on the reflecting layer and electrically connected to the epitaxial layer.

Abstract: A micro light-emitting element including an epitaxial structure, an insulating layer, an electrode structure and a sacrificial layer is provided. The epitaxial structure includes a top surface and a side surface. The insulating layer is disposed on the top surface and the side surface of the epitaxial structure, and the insulating layer includes an opening. The electrode structure is disposed on the top surface of the epitaxial structure and extends through the opening of the insulating layer to be electrically connected to the epitaxial structure. The sacrificial layer is sandwiched between a surface of the insulating layer and the corresponding electrode structure. A micro light-emitting element display device is further provided.

Abstract: A micro light-emitting diode is provided. The micro light-emitting diode includes a first-type semiconductor layer having a first doping type; a light-emitting layer over the first-type semiconductor layer; a first-type electrode over the first-type semiconductor layer; a second-type semiconductor layer having a second doping type over the light-emitting layer, wherein the second doping type is different from the first doping type; a second-type electrode over the second-type semiconductor layer; and a barrier layer under the first-type semiconductor layer and away from the first-type electrode and the second-type electrode, wherein the barrier layer includes a doped region having the second doping type.

Abstract: A detection circuit, a driving circuit, and a display panel and a driving method therefor are provided. The detection circuit includes an acquisition circuit and a processing circuit. The acquisition circuit includes a test transistor and an energy storage element, where, for the test transistor, a control end is configured to be coupled to the data signal terminal, a first end is configured to be written with a detection signal, and a second end is coupled to the energy storage element; and a structural characteristic of the test transistor is identical to a structural characteristic of the driving transistor. The processing circuit is coupled to the second end of the test transistor, and configured to detect a voltage at the second end of the test transistor as a detection voltage and regulate the data signal according to the detection voltage.

Abstract: This invention relates to the technical field of harmonic elimination for ferromagnetic resonance for a voltage transformer (abbreviated as PT), in particular, to a harmonic elimination method for ferromagnetic resonance for an active resistance-matching voltage transformer based on PID-adjustment, including compiling a resistance matching algorithm; designing and building a harmonic elimination control system based on the PID control strategy; presetting an active resistance-matching strategy; designing an engineering scheme for placing resistors.

Abstract: A micro light emitting diode structure including an epitaxial structure, a first insulating layer and a second insulating layer is provided. The epitaxial structure includes a first type semiconductor layer, a light emitting layer and a second type semiconductor layer. The first type semiconductor layer, the light emitting layer and a first portion of the second type semiconductor layer form a mesa. A second portion of the second type semiconductor layer is recessed relative the mesa to form a mesa surface. The first insulating layer covers from a top surface of the mesa to the mesa surface along a first side surface of the mesa, and exposes the second side surface. The second insulating layer directly covers a second side surface of the second portion, wherein a thickness ratio of the first insulating layer to the second insulating layer is between 10 and 50.

Abstract: A micro element structure including a body, two electrodes, two solder patterns and a confinement structure is provided. The two electrodes are disposed on a side of the body. The two solder patterns are disposed on the two electrodes, respectively. The confinement structure protrudes relative to the body, wherein the confinement structure surrounds one of the electrodes and the solder pattern thereon, and at least a portion of the confinement structure is separated from the surrounded solder pattern with a gap. A display device is also provided.

Abstract: A micro light emitting diode structure including an epitaxial structure, an electrode layer, a barrier layer and a bonding layer is provided. The epitaxial structure has a surface. The electrode layer is disposed on the surface of the epitaxial structure. The barrier layer is disposed on the electrode layer. The bonding layer is disposed on the barrier layer and away from the electrode layer.

Abstract: A micro light emitting diode structure including an epitaxial structure, an electrode layer and a barrier layer is provided. The epitaxial structure has a surface. The electrode layer is disposed on the surface of the epitaxial structure. The barrier layer is disposed on the electrode layer. An orthogonal projection area of the barrier layer on the epitaxial structure is greater than and covers an orthogonal projection area of the electrode layer on the epitaxial structure.

Abstract: Disclosed in the present invention are a crystal form of a TrkA inhibitor and a preparation method thereof, and an application thereof in preparation of drugs for treating diseases associated with pain, cancer, inflammation, neurodegenerative diseases, and certain infectious diseases.

Abstract: A crystal form of a pyrazin-2(1H)-one compound and a preparation method therefor. The present invention specifically related to a compound of formula (II) and a preparation method for a crystal form of the compound.

Abstract: Disclosed in the present invention are a crystal form of a TrkA inhibitor and a preparation method therefor, and an application thereof in preparation of drugs for treating diseases associated with pain, cancer, inflammation, neurodegenerative diseases, and certain infectious diseases.

Abstract: Provided are crystalline forms of pyrazine-2(1H)-ketone compound and a preparation method thereof; specifically disclosed are a method for preparing the compound of formula (II) and crystalline forms thereof.

Abstract: Disclosed are a crystal form (I) as an inhibitor of ACC1 and ACC2, a preparation method therefor, and the use thereof in the preparation of a drug as an inhibitor of ACC1 and ACC2.

Abstract: Disclosed are a crystal form (I) as an inhibitor of ACC1 and ACC2, a preparation method therefor, and the use thereof in the preparation of a drug as an inhibitor of ACC1 and ACC2.

Abstract: A micro light-emitting device includes an epitaxial structure, a first electrode, a second electrode and a conductive layer. The epitaxial structure includes a first-type semiconductor layer, a light-emitting layer, and a second-type semiconductor layer. The first-type semiconductor layer includes a first portion and a second portion. A bottom area of the first portion is smaller than a top area of the second portion. A thickness of the second portion is greater than 10% of a thickness of the first-type semiconductor layer. The first electrode is disposed on the epitaxial structure and located on the first portion of the first-type semiconductor layer. The second electrode is disposed on the epitaxial structure. The conductive layer is disposed between the first electrode and the first portion, wherein an orthographic projection area of the conductive layer on the first portion is greater than or equal to 90% of an area of the first portion.

Abstract: A micro light-emitting diode structure is provided. The micro light-emitting diode structure includes an epitaxial layer. The micro light-emitting diode structure also includes a reflecting layer disposed on the epitaxial layer. The micro light-emitting diode structure further includes a patterned electrode layer disposed between the epitaxial layer and the reflecting layer. The patterned electrode layer is divided into a plurality of patterned electrode segments, and the patterned electrode segments are separated from each other. Moreover, the micro light-emitting diode structure includes a first-type electrode and a second-type electrode disposed on the reflecting layer and electrically connected to the epitaxial layer.

Abstract: Provided are crystalline forms of pyrazine-2(1H)-ketone compound and a preparation method thereof; specifically disclosed are a method for preparing the compound of formula (II) and crystalline

Abstract: A crystal form of a pyrazin-2(1H)-one compound and a preparation method therefor. The present invention specifically related to a compound of formula (II) and a preparation method for a crystal form of the compound.