Abstract: A new integrated III-V/silicon Atomic Force Microscopy (AFM) active optical probe integrates a III-V semiconductor laser source and a silicon cantilever AFM probe into a robust easy-to-use single III-V/silicon chip to enable AFM measurements, optical imaging, and spectroscopy at the nanoscale.

Abstract: A diode-laser-based active transducer integrated on a heat-assisted magnetic recording head includes a diode laser structure, as a laser source, and a waveguide-transducer integrated with the laser structure as an intracavity element. Being a part of the laser cavity, the waveguide-transducer very efficiently delivers and couples the high-intensity intracavity laser light to a plasmonic antenna/transducer that concentrates the delivered near-field light to an optical spot of subwavelength nano-size volume to locally heat the surface of the magnetic recording medium.

Abstract: Disclosed herein are recombinant antibodies or the fragment thereof for detecting severe acute respiratory syndrome coronavirus (SARS-CoV). According to some embodiments, the SARS-CoV is SARS-CoV-1. According to some alternative embodiments, the SARS-CoV is SARS-CoV-2. Also disclosed herein are a kit comprising the recombinant antibodies, and a method for diagnosing the infection of SARS-CoV by using the recombinant antibody or the kit.

Abstract: A new semiconductor-laser-integrated Atomic Force Microscopy (AFM) optical probe integrates a semiconductor laser and a silicon cantilever AFM probe into a robust easy-to-use chip to enable AFM measurements, optical imaging, and spectroscopy at the nanoscale.

Abstract: A new monolithic Atomic Force Microscopy (AFM) active optical probe monolithically integrates a base of the probe, a cantilever, a semiconductor laser source, an AFM tip, and a photodetector into a robust, easy-to-use single semiconductor chip to enable AFM measurements, optical imaging, and optical spectroscopy at the nanoscale.

Abstract: Exemplary embodiments relate to techniques for improving a machine translation system. The machine translation system may include one or more models for generating a translation. The system may generate multiple candidate translations, and may present the candidate translations to different groups of users, such as users of a social network. User engagement with the different candidate translations may be measured, and the system may determine which of the candidate translations was most favored by the users. For example, in the context of a social network, the number of times that the translation is liked or shared, or the number of comments associated with the translation, may be used to determine user engagement with the translation. The models of the machine translation system may be modified to favor the most-favored candidate translation. The translation system may repeat this process to continue to tune the models in a feedback loop.

Abstract: A detection device, which is used with a mobile electronic device having an image capturing unit, is provided. The detection device includes a plasma generation unit and a light decomposing unit. The plasma generation unit generates plasma from a sample. The light decomposing unit decomposes light emitted by the plasma for spectral analysis. The mobile electronic device receives and analyzes the light decomposed by the light decomposing unit to determine whether an element exist in the sample.

Abstract: A detection device, which is used with a mobile electronic device having an image capturing unit, is provided. The detection device includes a plasma generation unit and a light decomposing unit. The plasma generation unit generates plasma from a sample. The light decomposing unit decomposes light emitted by the plasma for spectral analysis. The mobile electronic device receives and analyzes the light decomposed by the light decomposing unit to determine whether an element exist in the sample.

Abstract: A method for forming enhanced field oxide (FOX) region of low voltage devices in a high voltage process is disclosed. The method includes providing a semiconductor structure comprising a substrate, two field oxide regions on the substrate, a well between the two field oxide regions in the substrate and a silicon nitride layer between the two field oxide regions above the well. As a key step, nitrogen is implanted into the semiconductor structure, and the silicon nitride layer is then removed. Then, a gate oxide layer on the well and silicon oxynitride layer on the field oxide regions are all formed in-situ.