Patents by Inventor Fei-Hung Chen

Fei-Hung Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for forming enhanced FOX region of low voltage device in high voltage process
    Patent number: 6268266
    Abstract: A method for forming enhanced field oxide (FOX) region of low voltage devices in a high voltage process is disclosed. The method includes providing a semiconductor structure comprising a substrate, two field oxide regions on the substrate, a well between the two field oxide regions in the substrate and a silicon nitride layer between the two field oxide regions above the well. As a key step, nitrogen is implanted into the semiconductor structure, and the silicon nitride layer is then removed. Then, a gate oxide layer on the well and silicon oxynitride layer on the field oxide regions are all formed in-situ.
    Type: Grant
    Filed: October 22, 1999
    Date of Patent: July 31, 2001
    Assignee: United Microelectronics Corp.
    Inventors: Ching-Chun Hwang, Fei-Hung Chen, Meng-Jin Tsai, Wei-Chung Chen