Abstract: An n? type drift region, an n-type field stop region, and an n? type FZ wafer are provided in an n? type wafer. An edge termination structure portion is provided in a chip outer peripheral portion of regions of the n? type wafer, surrounding an active region inside a chip inner portion. A thickness of the chip inner portion is less than a thickness of the chip outer peripheral portion owing to a groove. A p-type collector region is in contact with the n? type FZ wafer and n-type field stop region. A collector electrode is in contact with the p-type collector region. A second distance between the collector electrode and the n-type field stop region in the edge termination structure portion is greater than a first distance between the collector electrode and the n-type field stop region in the active region.

Abstract: An n-type low lifetime adjustment region is provided in a portion inside an n? type drift region deeper than the bottom surface of a termination p-type base region or p-type guard ring from a substrate front surface, separated from the termination p-type base region and the p-type guard ring. The carrier lifetime of the n-type low lifetime adjustment region is shorter than the carrier lifetime of the n? type drift region. Because of this, it is possible to provide a reverse blocking IGBT such that it is possible to suppress both a high temperature reverse leakage current and an increase in turn-off loss, while suppressing deterioration in the trade-off relationship between the turn-off loss and the on-state voltage.

Abstract: Optical constructions are disclosed. A disclosed optical construction includes first and second optical layers having first and second major surfaces that face each other and are separated by an air gap. The first and second surfaces are susceptible to physically contacting each other at a location in the air gap. The optical construction further includes an optical film that is disposed at the location to prevent the first and second major surfaces from contacting each other at the location. The optical film has an effective index of refraction that is not greater than about 1.3.

Abstract: Depth of a termination p base region provided in a termination portion of an active region close to an edge termination structure portion is more than depth of a p-type base region provided inside the termination p base region. An n-type high-concentration region is provided from one main surface of the semiconductor substrate in the entire surface layer of one surface of a semiconductor substrate within a depth of 20 ?m or less below the bottom of the termination p base region. Ratio of the impurity concentration n1 of the n-type high-concentration region (1c) to the impurity concentration n2 of an n? drift region satisfies 1.0<n1/n2?5.0. Reverse leakage current when operation temperature of an element is high can be reduced and trade-off between on-state voltage and switching loss can be improved. Rising peak voltage of collector voltage when a semiconductor device is off is reduced.

Abstract: An A-NPC circuit is configured so that the intermediate potential of two connected IGBTs is clamped by a bidirectional switch including two RB-IGBTs. Control is applied to the turn-on di/dt of the IGBTs during the reverse recovery of the RB-IGBTs. The carrier life time of an n? drift region in each RB-IGBT constituting the bidirectional switch is comparatively longer than that in a typical NPT structure device. A low life time region is also provided in the interface between the n? drift region and a p collector region, and extends between the n? drift region and the p collector region. Thus, it is possible to provide a low-loss semiconductor device, a method for manufacturing the semiconductor device and a method for controlling the semiconductor device, in which the reverse recovery loss is reduced while the reverse recovery current peak and the jump voltage peak during reverse recovery are suppressed.

Abstract: A DC chopper comprising a control unit and a power circuit and a DC chopping method for a DFIG (doubly fed induction generator) system are provided. The input terminal of the control unit is coupled to a DC capacitor of a converter to detect a DC voltage. The power circuit includes input terminals, an overvoltage protection module, a rectifier module and output terminals. The overvoltage protection module comprises at least one discharge unit formed from a discharge resistor and a switch element, and the rectifier module is coupled in parallel to the overvoltage protection module. When a grid voltage drops, the control unit outputs a corresponding control signal to drive the switch element to be ON or OFF, and the output terminal of the power circuit absorbs a portion of rotor inrush current, so as to impose over-current protection.

Abstract: Light redirecting film is disclosed. The light redirecting film includes a first major surface that includes a plurality of first microstructures that extend along a first direction. The light redirecting film also includes a second major surface that is opposite to the first major surface and includes a plurality of second microstructures. The second major surface has an optical haze that is in a range from about 4% to about 20% and an optical clarity that is in a range from about 20% to about 60%. The light redirecting film has an average effective transmission that is not less than about 1.55.

Abstract: Light redirecting film is disclosed. The light redirecting film includes a first major surface that includes a plurality of first microstructures that extend along a first direction. The light redirecting film also includes a second major surface that is opposite to the first major surface and includes a plurality of second microstructures. The second major surface has an optical haze that is not greater than about 3% and an optical clarity that is not greater than about 85%. The light redirecting film has an average effective transmission that is not less than about 1.75.

Abstract: A semiconductor device including: a first conductivity type n-type drift layer; a second conductivity type VLD region which is formed on a chip inner circumferential side of a termination structure region provided on one principal surface of the n-type drift layer and which is higher in concentration than the n-type drift layer; a second conductivity type first clip layer which is formed on a chip outer circumferential side of the VLD region so as to be separated from the VLD region and which is higher in concentration than the n-type drift layer; and a first conductivity type channel stopper layer which is formed on a chip outer circumferential side of the first clip layer so as to be separated from the first clip layer and which is higher in concentration than the n-type drift layer.

Abstract: A method for synchronizing user data is provided, which includes: when a User Equipment (UE) moves into a coverage area of a new mobility management unit, an old mobility management unit sends an indication of whether a bearer modification procedure is to be triggered to the new mobility management unit, and the new mobility management unit determines whether to trigger the bearer modification procedure according to the indication. A system for synchronizing user data is further provided. By means of the technical solution of the method and the system, the situation that a Quality of Service (QoS) used by a bearer in the new mobility management unit does not match with a bearer QoS of an updated subscription data when a user equipment moves into a coverage area of a new mobility management unit can be avoided.

Abstract: Plural island-form emitter cells (22) having a p-base region (23) and an n+ emitter region (24) are provided, distanced from each other, on a main surface of an n? layer (21). A trench (25) deeper than the p-base region (23) is formed on either side of the emitter cell (22). A first gate electrode (26) is embedded in the trench (25) across a first gate insulating film (41). A second gate electrode (27) that electrically connects first gate electrodes (26) is provided, across a second gate insulating film (40), on a surface of a region of the p-base region (23) sandwiched by the n+ emitter region (24). A conductive region (28) that electrically connects second gate electrodes (27) is provided, across a third gate insulating film (42), on a surface of the n? layer (21). A contact region (29) that is isolated from the second gate electrode (27), and that short circuits the n+ emitter region (24) and p-base region (23), is provided.

Abstract: A touch panel system allows multiple simultaneous touch objects on a touch panel to be distinguished. The touch panel includes on its periphery a first plurality of light transmitters and a second plurality of light sensors, each positioned around at least a portion of a perimeter of the touch panel. A processor in communication with the at least one light sensor acquires light intensity data from the sensor(s), wherein any one or more touch objects placed within a touch detectable region of the panel interrupts at least a subset of light paths between transmitter and sensor. Based on the interrupted light paths, the processor generates a touch input vector that represents the placement of each touch object on the touch panel.

Abstract: Aspects of the invention are related to a semiconductor device including a first conductivity type n-type drift layer, a second conductivity type VLD region which is formed on a chip inner circumferential side of a termination structure region provided on one principal surface of the n-type drift layer and which is higher in concentration than the n-type drift layer, and a second conductivity type first clip layer which is formed on a chip outer circumferential side of the VLD region so as to be separated from the VLD region and which is higher in concentration than the n-type drift layer. The invention can also include a first conductivity type channel stopper layer which is formed on a chip outer circumferential side of the first clip layer so as to be separated from the first clip layer and which is higher in concentration than the n-type drift layer.

Abstract: A method and a system for notifying an attribute of an Internet Protocol (IP) address and a Serving Gateway (SGW) are disclosed. When an SGW is taken as a User Equipment's (UE's) SGW, the new SGW can be notified of an attribute of the UE's IP address. The technology of notifying an attribute of an IP address in the disclosure can ensure that the new SGW can learn the attribute of the UE's IP address in time when the new SGW is taken as the UE's SGW. Therefore, a charging gateway function entity connected with the new SGW can accurately charge the UE according to the attribute of the IP address.

Abstract: An apparatus is provided. It comprises: a VoIP gateway for communicating voice data of a video call stream over a DECT channel between at least one DECT terminal and a peer; and a WiFi access point for communicating video data of a video call stream over a WiFi channel between at least one WiFi video terminal and the peer.

Abstract: Mirror-polished CZ wafer and FZ wafer are prepared. A first impurity region which will be a first isolation region is formed in a surface layer of a first main surface of the CZ wafer. The first main surface of the CZ wafer and a first main surface of the FZ wafer are bonded to each other by an inter-molecular bond. A second impurity region which will be a second isolation region is formed in a surface layer of a second main surface of the FZ wafer. A heat treatment is performed to diffuse the first impurity region and the second impurity region such that the first impurity region and the second impurity region are continuous, thereby forming a through silicon isolation region.

Abstract: The present invention discloses method and system for performing security monitoring on file downloading, and a non-transitory computer-readable medium that stores instructions for performing security monitoring on file downloading. The method includes upon detecting a file downloading operation, performing security detection on a downloaded file to determine whether the downloaded file is secure; if the downloaded file is secure, determining whether a downloading tool adopted when the file is downloaded is instant messenger (IM) software; and if the adopted downloading tool is IM software, modifying a filename extension of the downloaded file to ensure that the downloaded file is capable of being directly opened or run.

Abstract: The present invention provides a method and system for transmitting a bearer control mode in a roaming scenario. The method includes: a home Policy and Charging Rules Function (hPCRF) sets a bearer control mode of an IP Connectivity Access Network (IP-CAN) session, and forwards the bearer control mode of the IP-CAN session to a visited Policy and Charging Rules Function (vPCRF) through an S9 subsession corresponding to the IP-CAN session; or, an hPCRF sets a bearer control mode of a gateway control session, and forwards the bearer control mode of the gateway control session to the vPCRF through an S9 subsession corresponding to the gateway control session. The system of the present invention includes an hPCRF and a vPCRF.

Abstract: A light redirecting film (100) includes a first major surface (110) that includes first microstructures (150) that extend along a first direction and a second major surface (120), which may form part of a matte layer, the second major surface being opposite to the first major surface and including second microstructures (160). The second major surface has an optical haze that is not greater than about 3% and an optical clarity that is not greater than about 85%. The light redirecting film has an average effective transmission that is not less than about 1.75. The light redirecting film (100) may comprise particles. The second microstructures may have a slope distribution.

Abstract: A touch panel method and system detects one or more touch objects placed on a surface of a touch panel and assigns consistent ID, position, size and convex contour to each touch object. The method and system allows multiple simultaneous touch objects on the touch panel to be distinguished. The touch panel includes on its periphery at least one light transmitter and at least one light sensor, each positioned around at least a portion of a perimeter of the touch panel. A processor in communication with the at least one light sensor acquires light intensity data from the sensor(s), wherein any one or more touch objects placed within a touch detectable region of the panel interrupts at least a subset of light paths between transmitter and sensor. Based on the interrupted light paths, the processor generates a touch input vector (assigned ID and spatial properties) that represents the placement of each touch object on the touch panel.