Abstract: Disclosed herein are a modified lysine-based polymer obtained from a process including Michael addition of at least a portion of free amino groups in a lysine-based polymer with a Michael acceptor selected from the group consisting of at least one of unsaturated carboxylic acids and unsaturated carboxylic acid esters, and a detergent composition including the same. Further disclosed herein are a method of preserving an aqueous detergent composition including the modified lysine-based polymer, and a method of laundering fabric or cleaning hard surfaces using the detergent composition including the modified lysine-based polymer.

Abstract: A ferroelectric memory device comprising a plurality of ferroelectric memory elements. Each of the plurality of ferroelectric memory elements includes a channel layer containing a metal oxide, a ferroelectric layer in contact with the channel layer in which the ferroelectric layer contains hafnium oxide, a first gate electrode facing the channel layer via the ferroelectric layer, an insulating layer facing the ferroelectric layer via the channel layer; and a second gate electrode facing the channel layer via the insulating layer.

Abstract: A ferroelectric memory device has a three-dimensional stacked structure with multiple ferroelectric memory elements arranged in series. The ferroelectric memory device has a semiconductor member having a columnar shape including a metal oxide, a ferroelectric layer containing hafnium oxide and surrounding the semiconductor member in contact with a side surface of the semiconductor member, and a plurality of gate electrodes arranged along a longitudinal direction of the semiconductor member and facing a side surface of the semiconductor member through the ferroelectric layer. The semiconductor member is a continuous member from its outer periphery to its central axis.

Abstract: A ferroelectric memory device comprising a plurality of ferroelectric memory elements. Each of the plurality of ferroelectric memory elements includes a channel layer containing a metal oxide, a ferroelectric layer in contact with the channel layer in which the ferroelectric layer contains hafnium oxide, a first gate electrode facing the channel layer via the ferroelectric layer, an insulating layer facing the ferroelectric layer via the channel layer; and a second gate electrode facing the channel layer via the insulating layer.

Abstract: A method for controlling switching of proximity-event detection elements, a terminal device, and a non-transitory computer readable storage medium are provided. The method includes the following. An instruction of switching a screen of a terminal device from a current first state to a second state is obtained. A first element is switched from an activated state to a non-activated state and a second element is switched from the non-activated state to the activated state by invoking a pre-established switching thread when the instruction of switching the screen from the first state to the second state is obtained. The screen of the terminal device is switched from the first state to the second state when a switching success notification is obtained from the switching thread.