Abstract: The present disclosure relates to the technical field of batteries, and more particularly, to a graphite and a preparation method thereof, a negative electrode plate, a secondary battery, and an energy storage device. The graphite has a first structural stability coefficient X1. The first structural stability coefficient X1 satisfies X1=(Dv90?Dv50)/(Dv90??Dv50?), and 0.90?X1?1.80, where: Dv90 represents a particle size value prior to roller pressing at which 90% volume of particles of the graphite are smaller; Dv50 represents a particle size value prior to the roller pressing at which 50% volume of the particles of the graphite are smaller; Dv90? represents a particle size value subsequent to the roller pressing at which 90% volume of the particles of the graphite are smaller; and Dv50? represents a particle size value subsequent to the roller pressing at which 50% volume of the particles of the graphite are smaller.

Abstract: A ferroelectric memory device comprising a plurality of ferroelectric memory elements. Each of the plurality of ferroelectric memory elements includes a channel layer containing a metal oxide, a ferroelectric layer in contact with the channel layer in which the ferroelectric layer contains hafnium oxide, a first gate electrode facing the channel layer via the ferroelectric layer, an insulating layer facing the ferroelectric layer via the channel layer; and a second gate electrode facing the channel layer via the insulating layer.

Abstract: A ferroelectric memory device has a three-dimensional stacked structure with multiple ferroelectric memory elements arranged in series. The ferroelectric memory device has a semiconductor member having a columnar shape including a metal oxide, a ferroelectric layer containing hafnium oxide and surrounding the semiconductor member in contact with a side surface of the semiconductor member, and a plurality of gate electrodes arranged along a longitudinal direction of the semiconductor member and facing a side surface of the semiconductor member through the ferroelectric layer. The semiconductor member is a continuous member from its outer periphery to its central axis.

Abstract: A ferroelectric memory device comprising a plurality of ferroelectric memory elements. Each of the plurality of ferroelectric memory elements includes a channel layer containing a metal oxide, a ferroelectric layer in contact with the channel layer in which the ferroelectric layer contains hafnium oxide, a first gate electrode facing the channel layer via the ferroelectric layer, an insulating layer facing the ferroelectric layer via the channel layer; and a second gate electrode facing the channel layer via the insulating layer.

Abstract: A method for controlling switching of proximity-event detection elements, a terminal device, and a non-transitory computer readable storage medium are provided. The method includes the following. An instruction of switching a screen of a terminal device from a current first state to a second state is obtained. A first element is switched from an activated state to a non-activated state and a second element is switched from the non-activated state to the activated state by invoking a pre-established switching thread when the instruction of switching the screen from the first state to the second state is obtained. The screen of the terminal device is switched from the first state to the second state when a switching success notification is obtained from the switching thread.