Abstract: An electronic ball lock is disclosed, including: a front ball lock body, where the front ball lock body includes a front fixed frame and a front sleeve rotatably arranged on the front fixed frame; a rear ball lock body; a connecting rod having one end connected with the rear ball lock body and the other end provided with a driving member extending into the front fixed frame; an electric clutch mechanism arranged in the front fixed frame and capable of driving the front sleeve to be coupled with or separated from the driving member; and an identification module arranged on the front ball lock body and electrically connected with the electric clutch mechanism.

Abstract: The present invention relates to a composition of a compound of general formula (A), a pharmaceutically acceptable salt or a prodrug, and a preparation method therefor.

Abstract: Provided are various embodiments of a fastening assembly and wearable mount as well as methods, devices, components, and assemblies associated therewith. An example fastening assembly includes a trigger assembly having an actuator configured to be operated by a user and a housing comprising a housing connection portion. The housing may receive the actuator. The fastening assembly may further include a connector configured to engage the housing connection portion.

Abstract: A ferroelectric memory device comprising a plurality of ferroelectric memory elements. Each of the plurality of ferroelectric memory elements includes a channel layer containing a metal oxide, a ferroelectric layer in contact with the channel layer in which the ferroelectric layer contains hafnium oxide, a first gate electrode facing the channel layer via the ferroelectric layer, an insulating layer facing the ferroelectric layer via the channel layer; and a second gate electrode facing the channel layer via the insulating layer.

Abstract: A ferroelectric memory device has a three-dimensional stacked structure with multiple ferroelectric memory elements arranged in series. The ferroelectric memory device has a semiconductor member having a columnar shape including a metal oxide, a ferroelectric layer containing hafnium oxide and surrounding the semiconductor member in contact with a side surface of the semiconductor member, and a plurality of gate electrodes arranged along a longitudinal direction of the semiconductor member and facing a side surface of the semiconductor member through the ferroelectric layer. The semiconductor member is a continuous member from its outer periphery to its central axis.

Abstract: A ferroelectric memory device comprising a plurality of ferroelectric memory elements. Each of the plurality of ferroelectric memory elements includes a channel layer containing a metal oxide, a ferroelectric layer in contact with the channel layer in which the ferroelectric layer contains hafnium oxide, a first gate electrode facing the channel layer via the ferroelectric layer, an insulating layer facing the ferroelectric layer via the channel layer; and a second gate electrode facing the channel layer via the insulating layer.

Abstract: A method for controlling switching of proximity-event detection elements, a terminal device, and a non-transitory computer readable storage medium are provided. The method includes the following. An instruction of switching a screen of a terminal device from a current first state to a second state is obtained. A first element is switched from an activated state to a non-activated state and a second element is switched from the non-activated state to the activated state by invoking a pre-established switching thread when the instruction of switching the screen from the first state to the second state is obtained. The screen of the terminal device is switched from the first state to the second state when a switching success notification is obtained from the switching thread.