Abstract: A flexible display substrate and a method for manufacturing the same are provided. The method includes: forming a first insulating layer on a flexible base substrate; forming an etching barrier layer on a side of the first insulating layer away from the flexible base substrate; forming a second insulating layer covering the etching barrier layer on the side of the first insulating layer away from the flexible base substrate; and forming a first opening in the first insulating layer and a second opening in the second insulating layer through one patterning process, so that an orthographic projection of the first opening on the flexible base substrate falls within an orthographic projection of the second opening on the flexible base substrate, so as to form a step portion at a connection position where the first opening is connected to the second opening.

Abstract: A flexible display substrate and a method for manufacturing the same are provided. The method includes: forming a first insulating layer on a flexible base substrate; forming an etching barrier layer on a side of the first insulating layer away from the flexible base substrate; forming a second insulating layer covering the etching barrier layer on the side of the first insulating layer away from the flexible base substrate; and forming a first opening in the first insulating layer and a second opening in the second insulating layer through one patterning process, so that an orthographic projection of the first opening on the flexible base substrate falls within an orthographic projection of the second opening on the flexible base substrate, so as to form a step portion at a connection position where the first opening is connected to the second opening.

Abstract: A fabrication method of a pixel structure is provided. The fabrication method includes: forming a gate electrode, a gate insulating layer, an active layer, a pixel electrode layer and a source-drain electrode layer on a substrate, and etching the source-drain electrode layer by using a photoresist pattern to form a source electrode and a drain electrode; ashing the photoresist pattern, so as to align edges of the ashed photoresist pattern with edges of the source electrode and the drain electrode; etching a silicon oxide generated in ashing the photoresist pattern; and etching a semiconductor layer between the source electrode and the drain electrode by an etching process to form a channel. The fabrication method can remove indium-containing material remained on both sides of a source electrode and a drain electrode, and can resolve a problem that a width of a channel between the source electrode and the drain electrode is small.

Abstract: A fabrication method of a pixel structure is provided. The fabrication method includes: forming a gate electrode, a gate insulating layer, an active layer, a pixel electrode layer and a source-drain electrode layer on a substrate, and etching the source-drain electrode layer by using a photoresist pattern to form a source electrode and a drain electrode; ashing the photoresist pattern, so as to align edges of the ashed photoresist pattern with edges of the source electrode and the drain electrode; etching a silicon oxide generated in ashing the photoresist pattern; and etching a semiconductor layer between the source electrode and the drain electrode by an etching process to form a channel. The fabrication method can remove indium-containing material remained on both sides of a source electrode and a drain electrode, and can resolve a problem that a width of a channel between the source electrode and the drain electrode is small.