Abstract: An SRAM memory cell that has a relatively small power consumption when writing a write value of ‘0’ to the memory cell includes cross-coupled first and second inverters, at least one read access transistor for selectively coupling a respective read bit line to a common connection node of a respective one of the first and second inverters, a switching transistor for selectively coupling the second inverter to a ground terminal, and a write access transistor for selectively coupling the common connection node of the second inverter to a write bit line.

Abstract: An SRAM memory cell that has a relatively small power consumption when writing a write value of ‘0’ to the memory cell includes cross-coupled first and second inverters, at least one read access transistor for selectively coupling a respective read bit line to a common connection node of a respective one of the first and second inverters, a switching transistor for selectively coupling the second inverter to a ground terminal, and a write access transistor for selectively coupling the common connection node of the second inverter to a write bit line.

Abstract: An instruction multi-level boosting method in a compiler has the step of providing a plurality of ordinary registers to act as the destination registers for access by the ordinary instructions. At least one instruction is boosted and speculatively executed. The boosting method also has the step of providing a plurality of special registers corresponding to the ordinary registers, and acting as the destination registers for access by the boosted and speculatively executed instruction. Then, at the original position of the boosted instruction, the address of at least one ordinary register used in the boosted instruction is translated into the address of at least one corresponding special register. In this way, the compiler efficiency can be incressed; the need of requiring additional registers is lowered; and the cost thereof is reduced down because no complicated duplicating circuit is needed.