Abstract: A multi-disulfide-bond long-chain peptide with neuroprotective activity can reduce cellular calcium influx by inhibiting glutamate receptors to protect cortical neurons from excitotoxicity induced by glutamate. It can be an effective neuroprotective agent.

Abstract: Provided is a method for shale gas production prediction, including: acquiring real shale gas production data, and determining a target production decline curve model according to the real shale gas production data; setting a time step for production prediction, and obtaining a linear production decline curve by performing production prediction by using the target production decline curve model based on the time step; determining target shale gas production residuals according to the linear production decline curve and the real shale gas production data, inputting the target shale gas production residuals to a long short-term memory, and obtaining a residual prediction result by performing production prediction according to the long short-term memory and the time step; and determining a target production prediction result of shale gas well to be subjected to production prediction based on the linear production decline curve and the residual prediction result.

Abstract: Nanohybrid composites, methods of making nanohybrid composites, and uses of nanohybrid composites. A nanohybrid composite may be a binary nanohybrid composite comprising MXene and dual-phase MoS2. A nanohybrid composite may be a ternary nanohybrid composite comprising MXene, dual-phase MoS2, and a plurality of carbon nanotubes. A nanohybrid composite may be made by a method comprising contacting a liquid or liquid(s), a MXene or MXenes, a sulfur precursor or sulfur precursors, a molybdenum precursor or molybdenum precursors, optionally, an ammonium precursor or ammonium precursors, and, optionally, carbon nanotubes to form a reaction mixture; heating the reaction mixture, where the nanohybrid composite is formed. Anodes may comprise one or more nanohybrid composite(s). Devices, such as, for example, batteries or the like, may comprise one or more anode(s) comprising one or more nanohybrid composite(s) and/or one or more nanohybrid composite(s).

Abstract: A genetically engineered bacterium and a preparation method and use thereof are disclosed. The genetically engineered bacteria contain a gene encoding ?-1,2-fucosyltransferase, and a gene encoding a protein tag is connected to the gene encoding ?-1,2-fucosyltransferase; the protein tag is MBP, SUMO1, SUMO2 or TrxA, the amino acid sequence of the MBP is shown in SEQ ID NO: 2, the amino acid sequence of the SUMO1 is shown in SEQ ID NO: 3, the amino acid sequence of the SUMO2 is shown in SEQ ID NO: 4, the amino acid sequence of the TrxA is shown in SEQ ID NO: 5. Fermentation with the genetically engineered bacteria can greatly increase the yield of 2?-fucosyllactose compared to the genetically engineered bacteria that only expresses ?-1,2-fucosyltransferase exogenously, and the yield can be more than doubled in a preferred case.

Abstract: The invention discloses a genetically engineered bacterium and a method for preparing a fucosylated oligosaccharide using the same. The method includes: transferring a fucosyl group of a donor to an oligosaccharide receptor by a fucosyltransferase heterologously expressed in a genetically engineered bacterium; wherein the donor is a nucleotide-activated donor, the fucosyltransferase has ?-1,2-fucosyltransferase activity; wherein, the fucosyltransferase is selected from one or more of the enzymes corresponding to NCBI Accession Numbers WP_109047124.1, RTL12957.1, MBP7103497.1, WP_120175093.1, RYE22506.1, WP_140393075.1 and HJB91111.1. The preparation method of the invention has high yield, greatly improved substrate conversion rate and product conversion rate, and has the potential to be applied to industrial production.

Abstract: The invention discloses a genetically engineered bacterium and its application in the preparation of sialyllactose. The genetically engineered bacterium has an N-acetylneuraminic acid biosynthesis pathway, includes multiple copies of a gene neuB for encoding sialic acid synthase, and the gene neuB is initiated for expression by a strong promoter. Using the genetically engineered bacteria of the invention to produce sialyllactose has the advantages of high yield and low overall cost.

Abstract: The present invention discloses a genetically engineered bacteria, which is E. coli integrated with lysogenic ?DE3, and lacZ gene is completely inactivated, but does not affect exogenous protein expression of the genetically engineered bacteria. The present invention also discloses a method for culturing the genetically engineered bacteria, and a method for preparing human milk oligosaccharides using the same, and use of the genetically engineered bacteria. The genetically engineered bacteria of the present invention can efficiently produce human milk oligosaccharides, such as 2?-fucosyllactose, and have wide industrial application prospects.

Abstract: A subsonic compressor, a rotor blade and a method for flow stability enhancement are provided. The subsonic compressor includes a hub and a casing, a tip clearance is formed between a tip of the rotor blade and an inner wall of the casing. The tip clearance is formed as a circumferential diverging leakage passage expanding from a pressure surface side of the rotor blade of the subsonic compressor at the tip to a suction surface side of the rotor blade at the tip.

Abstract: A vaneless contra-rotating compressor with multiple contra-rotating interfaces and application of the vaneless contra-rotating compressor is provided, which includes at least two vaneless contra-rotating interfaces. For each of the at least two contra-rotating interfaces, the contra-rotating interface corresponds to two of vaneless contra-rotating rotors. A rotating direction of an upstream rotor of the two vaneless contra-rotating rotors and a rotating direction of a downstream rotor of the two vaneless contra-rotating rotors are opposite. Rectifier stator vanes are not provided among all the rotors to supply sufficient inlet negative pre-swirl for the downstream rotors through the upstream rotors. Only the outlet guide vanes of the last stage, of the vaneless contra-rotating rotors are provided. The number of stages and the number of vaneless contra-rotating interfaces may be set flexibly according to the actual pressurization requirements.

Abstract: Field effect transistors (FET) including quantum layers. A FET may include a substrate, and an oxide layer disposed over the substrate. The oxide layer may include a first section and a second section positioned adjacent the first section. The FET may also include a first quantum layer disposed over the first section of the oxide layer, and a second quantum layer disposed over the second section of the oxide layer, and a first segment of the first quantum layer. Additionally, the FET may include a drain region disposed directly over a second segment the first quantum layer. The second segment of the first quantum layer may be positioned adjacent the first segment of the first quantum layer. The FET may further include a source region disposed over the second quantum layer, and a channel region formed over the second quantum layer, between the drain region and the source region.

Abstract: Disclosed are a self-locking folding bracket and a folding chair. The self-locking folding bracket includes two symmetrical foldable side supporting structures and a linkage assembly connected between the two side supporting structures, the linkage assembly includes two groups of side rods, two groups of cross rods and two groups of connecting rods, the cross rod and the connecting rod have an extreme position in the rotation process, the linkage assembly has a working state that passes down the extreme position so that the cross rod is abutted to the side rod, a folding state that the cross rod passes up the extreme position to leave the side rod, when the linkage assembly is in the working state, the linkage assembly is unfolded and able to maintain a distance between the two side supporting structures.

Abstract: A vaneless contra-rotating compressor with multiple contra-rotating interfaces and application of the vaneless contra-rotating compressor is provided, which includes at least two vaneless contra-rotating interfaces. For each of the at least two contra-rotating interfaces, the contra-rotating interface corresponds to two of vaneless contra-rotating rotors. A rotating direction of an upstream rotor of the two vaneless contra-rotating rotors and a rotating direction of a downstream rotor of the two vaneless contra-rotating rotors are opposite. Rectifier stator vanes are not provided among all the rotors to supply sufficient inlet negative pre-swirl for the downstream rotors through the upstream rotors. Only the outlet guide vanes of the last stage, of the vaneless contra-rotating rotors are provided. The number of stages and the number of vaneless contra-rotating interfaces may be set flexibly according to the actual pressurization requirements.

Abstract: Disclosed a transient voltage suppressor and a method for manufacturing the same. According to the transient voltage suppressor, an additional gate stack layer is introduced based on the prior transient voltage suppressor, and the diffusion isolation regions are reused as the conductive vias, so that, the gate stack layer, the first doped region, the conductive vias, and the second semiconductor layer constitute a MOS transistor being coupled in parallel to the Zener diode or the avalanche diode of the transient voltage suppressor. When the current of the I/O terminal is relatively large, the MOS transistor is turned on to share part of the current of the I/O terminal through the Zener diode or the avalanche diode, thereby protecting the Zener diode or the avalanche diode from being damaged due to excessive current. Thus, the robustness of the transient voltage suppressor is improved without increasing the manufacture cost.

Abstract: Disclosed is a vertical device, an ESD protection device having the vertical device, and a method for manufacturing the vertical device. The vertical device includes a forward diode which is formed by a semiconductor substrate and an epitaxial semiconductor layer, and a reverse Schottky barrier between an anode metal and the epitaxial semiconductor layer. The vertical device has a vertical current path from a second electrode to a first electrode, and a lateral current distribution at least partially surrounded and limited by the reverse Schottky barrier. The reverse Schottky barrier reduces the parasitic capacitance of the diode at high voltages, thereby increasing the response speed of the ESD protection device at high voltages.

Abstract: Field effect transistors (FET) including quantum layers. A FET may include a substrate, and an oxide layer disposed over the substrate. The oxide layer may include a first section and a second section positioned adjacent the first section. The FET may also include a first quantum layer disposed over the first section of the oxide layer, and a second quantum layer disposed over the second section of the oxide layer, and a first segment of the first quantum layer. Additionally, the FET may include a drain region disposed directly over a second segment the first quantum layer. The second segment of the first quantum layer may be positioned adjacent the first segment of the first quantum layer. The FET may further include a source region disposed over the second quantum layer, and a channel region formed over the second quantum layer, between the drain region and the source region.

Abstract: Disclosed a transient voltage suppressor and a method for manufacturing the same. According to the transient voltage suppressor, an additional gate stack layer is introduced based on the prior transient voltage suppressor, and the diffusion isolation regions are reused as the conductive vias, so that, the gate stack layer, the first doped region, the conductive vias, and the second semiconductor layer constitute a MOS transistor being coupled in parallel to the Zener diode or the avalanche diode of the transient voltage suppressor. When the current of the I/O terminal is relatively large, the MOS transistor is turned on to share part of the current of the I/O terminal through the Zener diode or the avalanche diode, thereby protecting the Zener diode or the avalanche diode from being damaged due to excessive current. Thus, the robustness of the transient voltage suppressor is improved without increasing the manufacture cost.

Abstract: Disclosed a transient voltage suppressor and a method for manufacturing the same. According to the transient voltage suppressor, an additional gate stack layer is introduced based on the prior transient voltage suppressor, and the diffusion isolation regions are reused as the conductive vias, so that, the gate stack layer, the first doped region, the conductive vias, and the second semiconductor layer constitute a MOS transistor being coupled in parallel to the Zener diode or the avalanche diode of the transient voltage suppressor. When the current of the I/O terminal is relatively large, the MOS transistor is turned on to share part of the current of the I/O terminal through the Zener diode or the avalanche diode, thereby protecting the Zener diode or the avalanche diode from being damaged due to excessive current. Thus, the robustness of the transient voltage suppressor is improved without increasing the manufacture cost.

Abstract: The present invention provides a crystal form of a renal outer medullary potassium channel inhibitor and a preparation method thereof. In particular, the present invention provides crystal form III of a L-tartrate of a renal outer medullary potassium channel (ROMK) inhibitor (I) and a preparation method thereof. The crystal form III has good chemical stability and crystal form stability, and the crystallization solvent used has low toxicity and residue. Thus, the present invention can be better used in clinical treatment.

Abstract: There is provided a microcatheter with a tapering wall thickness shaft having varying stiffness/flexibility along its length from proximal end near the medical practitioner to the distal end near the target site in the patient, such as with at least three segments. The shaft is prepared of a thermoplastic material having varying composition along its length. The distal end may be shaped according to the required use just prior to the medical procedure. The microcatheter is particularly adapted for the delivery of microspheric compositions for treatment of tumors or fibroids by embolization of peripheral blood vessels of the tumor or fibroid.

Abstract: Disclosed is a rectification device, a method for manufacturing the same and an ESD protection device. The rectification device comprises: a semiconductor substrate with a doping type of P-type; an epitaxial semiconductor layer with a doping type of N-type and located on the semiconductor substrate; a first doped region with a doping type of N-type and located in the epitaxial semiconductor layer; wherein the semiconductor substrate and the epitaxial semiconductor layer are respectively used as an anode and a cathode of the rectification device, and the rectification device further comprises a reverse Schottky barrier being formed in the cathode. According to the disclosure, a reverse Schottky barrier is formed to reduce the parasitic capacitance of the diode at high voltages, thereby increasing the response speed of the ESD protection device at high voltages.