Abstract: A method for generating a user interface is described. A script file for a software component is received, the software component being configured by source code that specifies a plurality of variables for the software component. The script file is parsed for markup language that describes a graphical user interface for the plurality of variables of the software component. A graphical user interface for modifying values of the plurality of variables of the software component is automatically generated using the markup language.

Abstract: A Micro-LED array device based on III-nitride semiconductors and a method for fabricating the same are provided. The Micro-LED array device includes arrayed sector mesa structures that are formed by etching to penetrate through a p-type GaN layer and a quantum-well active layer and deep into an n-type GaN layer, a p-type electrode array deposited by evaporation on the p-type GaN layer of sector arrays, and an n-type electrode array deposited by evaporation on the n-type GaN layer. The n-type electrode array forms blocking walls to isolate the sector mesas from one another. The blocking walls, and each of the blocking walls and the annular structure surrounding the sector mesa are connected to each other.

Abstract: A method for generating a user interface is described. A script file for a software component is received, the software component being configured by source code that specifies a plurality of variables for the software component. The script file is parsed for markup language that describes a graphical user interface for the plurality of variables of the software component. A graphical user interface for modifying values of the plurality of variables of the software component is automatically generated using the markup language.

Abstract: A monolithically and heterogeneously integrated micro-light-emitting diode (microLED) display chip includes the following parts from bottom to top: an LED epitaxial wafer, an isolation layer, a two-dimensional (2D) thin-film transistor (TFT) drive array. The LED epitaxial wafer is provided with a microLED column display array. The 2D TFT drive array is connected to the microLED column display array through a metal column array. A top-gate field-effect transistor (FET) or a back-gate FET is used as a 2D TFT. A channel layer of the 2D TFT is made of a 2D layered material. The vertical monolithic heterogeneous integration is achieved through a drive circuit defined by a microLED column array on the epitaxial wafer and the 2D TFT matrix. A preparation method of the monolithically and heterogeneously integrated microLED display chip is provided.

Abstract: A Micro-LED array device based on III-nitride semiconductors and a method for fabricating the same are provided. The Micro-LED array device includes arrayed sector mesa structures that are formed by etching to penetrate through a p-type GaN layer and a quantum-well active layer and deep into an n-type GaN layer, a p-type electrode array deposited by evaporation on the p-type GaN layer of sector arrays, and an n-type electrode array deposited by evaporation on the n-type GaN layer. The n-type electrode array forms blocking walls to isolate the sector mesas from one another. The blocking walls, and each of the blocking walls and the annular structure surrounding the sector mesa are connected to each other.