Patents by Inventor Feifei FANG
Feifei FANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240107881Abstract: Provided a compound represented by Chemical Formula 1, and a photoelectric device, a light absorption sensor, and an electronic device including the same. In Chemical Formula 1, the definition of each substituent is as described in the specification.Type: ApplicationFiled: August 16, 2023Publication date: March 28, 2024Applicant: Samsung Electronics Co., Ltd.Inventors: Younhee LIM, Feifei FANG, Jeoung In YI, Hyerim HONG, Kyung Bae PARK, Hwijoung SEO
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Publication number: 20240101565Abstract: An organic compound is represented by Chemical Formula 1A or Chemical Formula 1B. In Chemical Formulas 1A and 1B, Ar1, Ar2, R1, R2, n, and m are each the same as in the detailed description.Type: ApplicationFiled: August 18, 2023Publication date: March 28, 2024Applicant: Samsung Electronics Co., Ltd.Inventors: Jeong Il PARK, Feifei FANG, Sungyoung YUN, Chul Joon HEO, Kyung Bae PARK, Hwijoung SEO
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Patent number: 11929384Abstract: An image sensor may include a first photo-sensing device on a semiconductor substrate and configured to sense light of a first wavelength spectrum, and second and third photo-sensing devices integrated in the semiconductor substrate and configured to sense light of a second and third wavelength spectrum, respectively. The first photo-sensing device may overlap each of the second and third photo-sensing devices in a thickness direction of the semiconductor substrate. The second and third photo-sensing devices do not overlap in the thickness direction and each have an upper surface, a lower surface, and a doped region therebetween. The third photo-sensing device includes an upper surface deeper further from the upper surface of the semiconductor substrate than the upper surface of the second photo-sensing device and a doped region thicker than the doped region of the second photo-sensing device. The image sensor may omit the first photo-sensing device.Type: GrantFiled: March 20, 2023Date of Patent: March 12, 2024Assignee: Samsung Electronics Co., Ltd.Inventors: Kyung Bae Park, Yong Wan Jin, Sung Young Yun, Sung Jun Park, Feifei Fang, Chul Joon Heo
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Publication number: 20240057438Abstract: A sensor-embedded display panel includes a light emitting element on a substrate and including a light emitting layer, and a photosensor on the substrate and including a photosensitive layer extending at least partially in parallel with the light emitting layer along an in-plane direction of the substrate. The light emitting element and the photosensor include separate, respective portions of each of first and second common auxiliary layers each extending continuously as a single piece of material under and on, respectively, each of the light emitting layer and the photosensitive layer. The photosensitive layer may include a light absorbing semiconductor having a HOMO energy level having a difference of less than about 1.0 eV from a HOMO energy level of the first common auxiliary layer and a LUMO energy level having a difference of less than about 1.0 eV from a LUMO energy level of the second common auxiliary layer.Type: ApplicationFiled: May 15, 2023Publication date: February 15, 2024Applicant: Samsung Electronics Co., Ltd.Inventors: Hyeong-Ju KIM, Chul Joon Heo, Kyung Bae Park, Feifei Fang, Hwijoung Seo, Hiromasa Shibuya, Sungyoung Yun, Tae Jin Choi, Hyerim Hong
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Publication number: 20240040810Abstract: A sensor-embedded display panel includes a light emitting element on a substrate and including a light emitting layer, and a photosensor including a photosensitive layer on the substrate and arranged in parallel with the light emitting layer along an in-plane direction of the substrate such that the photosensor and the light emitting layer at least partially overlap in the in-plane direction, wherein the light emitting element and the photosensor further include separate, respective portions of a first common auxiliary layer disposed under each of the light emitting layer and the photosensitive layer and connected to each other to be a single piece of material extending continuously between the light emitting element and the photosensor, and the photosensitive layer includes a first semiconductor represented by Chemical Formula 1 and a second semiconductor not including any fullerenes and forming a pn junction with the first semiconductor.Type: ApplicationFiled: November 4, 2022Publication date: February 1, 2024Applicant: Samsung Electronics Co., Ltd.Inventors: Sungyoung YUN, Kyung Bae PARK, Feifei FANG, Hwijoung SEO, Hiromasa SHIBUYA, Younhee LIM, Tae Jin CHOI, Chul Joon HEO
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Patent number: 11869909Abstract: An image sensor may include a substrate, and a plurality of wavelength separation filters on the substrate and arranged along an in-plane direction of the substrate. The wavelength separation filters include a first wavelength separation filter configured to selectively transmit incident light in the first wavelength spectrum, and photoelectrically convert the incident light in at least one of the second wavelength spectrum or the third wavelength spectrum, a second wavelength separation filter configured to selectively transmit the incident light in the second wavelength spectrum and photoelectrically convert the incident light in at least one of the first wavelength spectrum or the third wavelength spectrum, and a third wavelength separation filter configured to selectively transmit the incident light in the third wavelength spectrum and photoelectrically convert the incident light in at least one of the first wavelength spectrum or the second wavelength spectrum.Type: GrantFiled: June 2, 2021Date of Patent: January 9, 2024Assignee: Samsung Electronics Co., Ltd.Inventors: Chul Joon Heo, Kyung Bae Park, Sung Young Yun, Seon-Jeong Lim, Feifei Fang, Taejin Choi
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Publication number: 20240008351Abstract: Disclosed are a sensor-embedded display panel and an electronic device including the sensor-embedded display panel. The sensor-embedded panel may include a light emitting element and a photosensor on a substrate. The light emitting element may include a light emitting layer and the photosensor may include a photosensitive layer in parallel with the light emitting layer along an in-plane direction of the substrate. The light emitting element and the photosensor include respective portions of a first common auxiliary layer. The first common auxiliary layer may be continuous along the in-place direction of the substrate and under each of the light emitting layer and the photosensitive layer. The photosensitive layer may include a fluorine-containing p-type semiconductor and a non-fullerene n-type semiconductor. The non-fullerene n-type semiconductor may form a pn junction with the p-type semiconductor.Type: ApplicationFiled: December 13, 2022Publication date: January 4, 2024Applicant: Samsung Electronics Co., Ltd.Inventors: Jisoo SHIN, Hiromasa SHIBUYA, Hyeong-ju KIM, Kyung Bae PARK, Feifei FANG, Sungyoung YUN, Chul Joon HEO
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Patent number: 11855236Abstract: A sensor includes a first electrode and a second electrode, and a photo-active layer between the first electrode and the second electrode. The photo-active layer includes a light absorbing semiconductor configured to form a Schottky junction with the first electrode. The photo-active layer has a charge carrier trapping site configured to capture photo-generated charge carriers generated based on the light absorbing semiconductor absorbing incident light that enters at least the photo-active layer at a position adjacent to the first electrode. The sensor is configured to have an external quantum efficiency (EQE) that is adjusted based on a voltage bias being applied between the first electrode and the second electrode.Type: GrantFiled: January 9, 2023Date of Patent: December 26, 2023Assignee: Samsung Electronics Co., Ltd.Inventors: Kyung Bae Park, Sung Jun Park, Feifei Fang, Sung Young Yun, Seon-Jeong Lim, Chul Joon Heo
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Publication number: 20230309366Abstract: Disclosed are a compound represented by Chemical Formula 1, a sensor including the compound, a sensor-embedded display panel, and an electronic device. In Chemical Formula 1, X1, A, and R1 to R5 are as described in the specification.Type: ApplicationFiled: November 3, 2022Publication date: September 28, 2023Applicant: Samsung Electronics Co., Ltd.Inventors: Tae Jin CHOI, Hyerim HONG, Kyung Bae PARK, Feifei FANG, Sungyoung YUN, Chul Joon HEO
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Publication number: 20230299115Abstract: An image sensor may include a first photo-sensing device on a semiconductor substrate and configured to sense light of a first wavelength spectrum, and second and third photo-sensing devices integrated in the semiconductor substrate and configured to sense light of a second and third wavelength spectrum, respectively. The first photo-sensing device may overlap each of the second and third photo-sensing devices in a thickness direction of the semiconductor substrate. The second and third photo-sensing devices do not overlap in the thickness direction and each have an upper surface, a lower surface, and a doped region therebetween. The third photo-sensing device includes an upper surface deeper further from the upper surface of the semiconductor substrate than the upper surface of the second photo-sensing device and a doped region thicker than the doped region of the second photo-sensing device. The image sensor may omit the first photo-sensing device.Type: ApplicationFiled: March 20, 2023Publication date: September 21, 2023Applicant: Samsung Electronics Co., Ltd.Inventors: Kyung Bae Park, Yong Wan Jin, Sung Young Yun, Sung Jun Park, Feifei Fang, Chul Joon Heo
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Publication number: 20230192721Abstract: A compound represented by Chemical Formula 1, a sensor including the compound, a sensor-embedded display panel including the compound, and an electronic device including the compound. In Chemical Formula 1, X1, X2, X3, Ar1, L1, A, R1, and R2 are the same as in the specification.Type: ApplicationFiled: June 14, 2022Publication date: June 22, 2023Applicant: Samsung Electronics Co., Ltd.Inventors: Youn Hee LIM, Taejin CHOI, Feifei FANG, Jeoungin YI, Kyung Bae PARK, Sung Young YUN
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Patent number: 11631819Abstract: Disclosed are a photoelectric conversion device and an organic sensor and an electronic device including the same. The photoelectric conversion device includes a first and a second electrode, a photoelectric conversion layer between the first and the second electrode and configured to absorb light in at least one portion of a wavelength spectrum and to convert the absorbed light into an electric signal, and a buffer layer between the second electrode and the photoelectric conversion layer and including a mixture of at least two materials. The mixture includes a first and a second material. The first material has an energy bandgap of at least about 3.2 eV and a HOMO energy level of at least about 6.0 eV. The second material has an energy bandgap of less than or equal to about 2.8 eV and a HOMO energy level of at least about 6.0 eV.Type: GrantFiled: January 25, 2021Date of Patent: April 18, 2023Assignee: Samsung Electronics Co., Ltd.Inventors: Kyung Bae Park, Sung Jun Park, Feifei Fang, Sung Young Yun, Seon-Jeong Lim, Youn Hee Lim, Chul Joon Heo
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Publication number: 20230113862Abstract: A compound is represented by Chemical Formula 1. In Chemical Formula 1, G, R1, R2, R3, X1, Ar1 and Ar2 are each the same as in the specification.Type: ApplicationFiled: July 29, 2022Publication date: April 13, 2023Applicant: Samsung Electronics Co., Ltd.Inventors: Hyeongju KIM, Feifei FANG, Kyung Bae PARK, Jeong Il PARK, Jisoo SHIN, Sung Young YUN, Taejin CHOI
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Patent number: 11616092Abstract: An image sensor may include a first photo-sensing device on a semiconductor substrate and configured to sense light of a first wavelength spectrum, and second and third photo-sensing devices integrated in the semiconductor substrate and configured to sense light of a second and third wavelength spectrum, respectively. The first photo-sensing device may overlap each of the second and third photo-sensing devices in a thickness direction of the semiconductor substrate. The second and third photo-sensing devices do not overlap in the thickness direction and each have an upper surface, a lower surface, and a doped region therebetween. The third photo-sensing device includes an upper surface deeper further from the upper surface of the semiconductor substrate than the upper surface of the second photo-sensing device and a doped region thicker than the doped region of the second photo-sensing device. The image sensor may omit the first photo-sensing device.Type: GrantFiled: November 13, 2020Date of Patent: March 28, 2023Assignee: Samsung Electronics Co., Ltd.Inventors: Kyung Bae Park, Yong Wan Jin, Sung Young Yun, Sung Jun Park, Feifei Fang, Chui Joon Heo
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Publication number: 20230036360Abstract: An organic photodiode includes a first electrode including a reflective layer, a second electrode including a semi-transmissive layer, a photoelectric conversion layer between the first electrode and the second electrode and including an organic light absorbing material, and a buffer layer that is at least one of between the reflective layer and the photoelectric conversion layer or between the semi-transmissive layer and the photoelectric conversion layer. The organic photodiode is configured to exhibit at least three external quantum efficiency (EQE) spectra in a wavelength region of about 380 nm to about 3000 nm and each EQE spectrum of the at least three EQE spectra has a full width at half maximum of about 2 nm to about 100 nm.Type: ApplicationFiled: June 28, 2022Publication date: February 2, 2023Applicant: Samsung Electronics Co., Ltd.Inventors: Sung Young YUN, Kyung Bae PARK, Chul Joon HEO, Feifei FANG, Hwijoung SEO
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Patent number: 11552212Abstract: A sensor includes a first electrode and a second electrode, and a photo-active layer between the first electrode and the second electrode. The photo-active layer includes a light absorbing semiconductor configured to form a Schottky junction with the first electrode. The photo-active layer has a charge carrier trapping site configured to capture photo-generated charge carriers generated based on the light absorbing semiconductor absorbing incident light that enters at least the photo-active layer at a position adjacent to the first electrode. The sensor is configured to have an external quantum efficiency (EQE) that is adjusted based on a voltage bias being applied between the first electrode and the second electrode.Type: GrantFiled: May 3, 2021Date of Patent: January 10, 2023Assignee: Samsung Electronics Co., Ltd.Inventors: Kyung Bae Park, Sung Jun Park, Feifei Fang, Sung Young Yun, Seon-Jeong Lim, Chul Joon Heo
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Publication number: 20220406855Abstract: A sensor embedded display panel includes a substrate, a light emitting element on the substrate and including an emission layer; and a photoelectric element on the substrate. The photoelectric element includes a light absorbing layer. The light absorbing layer at least partially overlaps the emission layer in a horizontal direction extending in parallel to an upper surface of the substrate. The light emitting element and the photoelectric element each include a separate portion of a first common auxiliary layer that extends on tops of the emission layer and the light absorbing layer and a separate portion of a second common auxiliary layer that extends on bottoms of the emission layer and the light absorbing layer. The photoelectric element further includes an auxiliary layer that has a thickness corresponding to one of a red wavelength spectrum, a green wavelength spectrum, or a blue wavelength spectrum.Type: ApplicationFiled: May 13, 2022Publication date: December 22, 2022Applicant: Samsung Electronics Co., Ltd.Inventors: Kyung Bae PARK, Sung Young YUN, Chul Joon HEO, Hyeong-Ju KIM, Feifei FANG, Taejin CHOI
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Publication number: 20220392972Abstract: A sensor-embedded display panel includes a substrate, a light emitting element on the substrate and including a light emitting layer, and a photosensor on the substrate and including a photoelectric conversion layer in parallel with the light emitting layer along an in-plane direction of the substrate, wherein the light emitting element and the photosensor each include a separate portion of a first common auxiliary layer that is a single piece of material that extends continuously on the light emitting layer and the photoelectric conversion layer, and a separate portion of a common electrode on the first common auxiliary layer and is configured to apply a common voltage to both the light emitting element and the photosensor, and the photoelectric conversion layer includes a sequential stack from the first common auxiliary layer of a first n-type semiconductor layer, a second n-type semiconductor layer, and a p-type semiconductor layer.Type: ApplicationFiled: March 16, 2022Publication date: December 8, 2022Applicant: Samsung Electronics Co., Ltd.Inventors: Chul Joon HEO, Kyung Bae PARK, Sung Young YUN, Hyeongju KIM, Feifei FANG, Hwijoung SEO, Juhyung LIM, Taejin CHOI
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Patent number: 11499009Abstract: A liquid crystal polymer including structural units derived from an aromatic hydroxy carboxylic acid in an amount of greater than about 30 mol % and less than or equal to about 50 mol %, an aromatic dicarboxylic acid which includes about 50 mol % or greater of a structural unit derived from a compound including two carboxyl groups at a meta-position of an aromatic ring in an amount greater than or equal to about 50 mol % of the amount of the structural unit derived from the aromatic hydroxy carboxylic acid, each based on total moles of the structural units in the liquid crystal polymer, and an aromatic diol that is 4,4?-dihydroxybiphenyl, hydroquinone, or a combination thereof; a composite composition including the liquid crystal polymer, an article produced from the liquid crystal polymer or the composite composition, a battery case including the article, and a battery including the battery case and an electrode assembly.Type: GrantFiled: November 19, 2019Date of Patent: November 15, 2022Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: In Ki Kim, Feifei Fang, In Su Lee, Hyoungwoo Choi, In Kim, Kyeong Pang, Sung Dug Kim
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Publication number: 20220289767Abstract: A composition for a photoelectric device includes a compound represented by Chemical Formula 1, and an image sensor and an electronic device including the same: In Chemical Formula 1, each substituent is the same as defined in the detailed description.Type: ApplicationFiled: March 7, 2022Publication date: September 15, 2022Applicant: Samsung Electronics Co., Ltd.Inventors: Jeong Il PARK, Cheol HAM, Hyeongju KIM, Feifei FANG, Sung Young YUN, Youn Hee LIM, Hye Rim HONG