Abstract: The present disclosure is related to a mobile device, of which an image processing circuit is electrically connected to two buses, and a processor transmits an instruction and multiple coefficients of an inverse matrix to the image processing circuit through the second bus. The instruction instructs to perform a transformation process on an input image. Based on the inverse matrix and the coordinates of an output pixel, the image processing circuit calculates the coordinates of an input pixel of the input image, thereby reading the input pixel from a memory through the first bus. The image processing circuit also writes the output pixel to the memory through the first bus.

Abstract: A method for performing image decompression with limited hardware resource, associated image processing circuit and electronic device are provided. The method may include: utilizing an inverse quantization circuit to perform inverse quantization processing according to a bitstream to generate a first processing result, where the bitstream carries compressed data of a predetermined image; and utilizing an up-sampling circuit to perform up-sampling processing on the first processing result to generate a second processing result, for generating a decompressed image as a reproduced version of the predetermined image. During generating the decompressed image according to the bitstream, the image processing circuit is arranged to prevent using any entropy decoding circuit, any quantization table, any de-zigzag circuit, and any inverse transform circuit associated with the aforementioned any entropy decoding circuit, the aforementioned any quantization table and the aforementioned any de-zigzag circuit.

Abstract: A method for performing image decompression with limited hardware resource, associated image processing circuit and electronic device are provided. The method may include: utilizing an inverse quantization circuit to perform inverse quantization processing according to a bitstream to generate a first processing result, where the bitstream carries compressed data of a predetermined image; and utilizing an up-sampling circuit to perform up-sampling processing on the first processing result to generate a second processing result, for generating a decompressed image as a reproduced version of the predetermined image. During generating the decompressed image according to the bitstream, the image processing circuit is arranged to prevent using any entropy decoding circuit, any quantization table, any de-zigzag circuit, and any inverse transform circuit associated with the aforementioned any entropy decoding circuit, the aforementioned any quantization table and the aforementioned any de-zigzag circuit.

Abstract: Methods for depositing a metal contact stack on a substrate are described. The metal stack includes a metal cap layer and a molybdenum conductor layer. The method includes depositing the metal cap layer on the substrate by physical vapor deposition (PVD) and depositing the molybdenum conductor layer by atomic layer deposition (ALD) on the metal cap layer.

Abstract: Apparatus and methods to provide electronic devices comprising tungsten film stacks are provided. A tungsten liner formed by physical vapor deposition is filled with a tungsten film formed by chemical vapor deposition directly over the tungsten liner.

Abstract: Methods and apparatus for processing a substrate is provided herein. For example, a method for processing a substrate comprises depositing a silicide layer within a feature defined in a layer on a substrate, forming one of a metal liner layer or a metal seed layer atop the silicide layer within the feature via depositing at least one of molybdenum (Mo) or tungsten (W) using physical vapor deposition, and depositing Mo using at least one of chemical vapor deposition or atomic layer deposition atop the at least one of the metal liner layer or the metal seed layer, without vacuum break.

Abstract: Method for forming tungsten gap fill on a structure, including high aspect ratio structures includes depositing a tungsten liner in the structure using a physical vapor deposition (PVD) process with high ionization and an ambient gas of argon or krypton. The PVD process is performed at a temperature of approximately 20 degrees Celsius to approximately 300 degrees Celsius. The method further includes treating the structure with a nitridation process and depositing bulk fill tungsten into the structure using a chemical vapor deposition (CVD) process to form a seam suppressed boron free tungsten fill. The CVD process is performed at a temperature of approximately 300 degrees Celsius to approximately 500 degrees Celsius and at a pressure of approximately 5 Torr to approximately 300 Torr.

Abstract: Methods for DRAM device with a buried word line are described. The method includes forming a metal cap layer and a molybdenum conductor layer in a feature on a substrate. The method includes depositing the metal cap layer on the substrate by physical vapor deposition (PVD) and depositing the molybdenum conductor layer by atomic layer deposition (ALD) on the metal cap layer.

Abstract: Method for forming tungsten gap fill on a structure, including high aspect ratio structures includes depositing a tungsten liner in the structure using a physical vapor deposition (PVD) process with high ionization and an ambient gas of argon or krypton. The PVD process is performed at a temperature of approximately 20 degrees Celsius to approximately 300 degrees Celsius. The method further includes treating the structure with a nitridation process and depositing bulk fill tungsten into the structure using a chemical vapor deposition (CVD) process to form a seam suppressed boron free tungsten fill. The CVD process is performed at a temperature of approximately 300 degrees Celsius to approximately 500 degrees Celsius and at a pressure of approximately 5 Torr to approximately 300 Torr.

Abstract: The disclosure is directed to compositions comprising a prodrug and an immunomodulator, which can self-assemble into a nanofiber hydrogel at the site of application in a human. The prodrug comprises one or more cytotoxic agents conjugated to a hydrophilic moiety by a linker. The compositions may be used to kill cancer cells, such as glioblastoma and colorectal cancer cells.

Abstract: Methods for DRAM device with a buried word line are described. The method includes forming a metal cap layer and a molybdenum conductor layer in a feature on a substrate. The method includes depositing the metal cap layer on the substrate by physical vapor deposition (PVD) and depositing the molybdenum conductor layer by atomic layer deposition (ALD) on the metal cap layer.

Abstract: Methods for DRAM device with a buried word line are described. The method includes forming a metal cap layer and a molybdenum conductor layer in a feature on a substrate. The method includes depositing the metal cap layer on the substrate by physical vapor deposition (PVD) and depositing the molybdenum conductor layer by atomic layer deposition (ALD) on the metal cap layer.

Abstract: Methods and apparatus for processing a substrate is provided herein. For example, a method for processing a substrate comprises depositing a silicide layer within a feature defined in a layer on a substrate, forming one of a metal liner layer or a metal seed layer atop the silicide layer within the feature via depositing at least one of molybdenum (Mo) or tungsten (W) using physical vapor deposition, and depositing Mo using at least one of chemical vapor deposition or atomic layer deposition atop the at least one of the metal liner layer or the metal seed layer, without vacuum break.

Abstract: Method for forming tungsten gap fill on a structure, including high aspect ratio structures includes depositing a tungsten liner in the structure using a physical vapor deposition (PVD) process with high ionization and an ambient gas of argon or krypton. The PVD process is performed at a temperature of approximately 20 degrees Celsius to approximately 300 degrees Celsius. The method further includes treating the structure with a nitridation process and depositing bulk fill tungsten into the structure using a chemical vapor deposition (CVD) process to form a seam suppressed boron free tungsten fill. The CVD process is performed at a temperature of approximately 300 degrees Celsius to approximately 500 degrees Celsius and at a pressure of approximately 5 Torr to approximately 300 Torr.

Abstract: Methods for depositing a metal contact stack on a substrate are described. The method stack includes a metal cap layer and a molybdenum conductor layer. The method includes depositing the metal cap layer on the substrate by physical vapor deposition (PVD) and depositing the molybdenum conductor layer by atomic layer deposition (ALD) on the metal cap layer.

Abstract: Methods for DRAM device with a buried word line are described. The method includes forming a metal cap layer and a molybdenum conductor layer in a feature on a substrate. The method includes depositing the metal cap layer on the substrate by physical vapor deposition (PVD) and depositing the molybdenum conductor layer by atomic layer deposition (ALD) on the metal cap layer.

Abstract: The present invention provides the design of a class of prodrugs for self-assembly into therapeutic tubular supramolecular polymers and their use in a wide variety of applications. The therapeutic tubular supramolecular polymers can be used to formulate drugs and imaging agents for in vitro and in vivo uses.

Abstract: Method for forming tungsten gap fill on a structure, including high aspect ratio structures includes depositing a tungsten liner in the structure using a physical vapor deposition (PVD) process with high ionization and an ambient gas of argon or krypton. The PVD process is performed at a temperature of approximately 20 degrees Celsius to approximately 300 degrees Celsius. The method further includes treating the structure with a nitridation process and depositing bulk fill tungsten into the structure using a chemical vapor deposition (CVD) process to form a seam suppressed boron free tungsten fill. The CVD process is performed at a temperature of approximately 300 degrees Celsius to approximately 500 degrees Celsius and at a pressure of approximately 5 Torr to approximately 300 Torr.

Abstract: Apparatus and methods to provide electronic devices comprising tungsten film stacks are provided. A tungsten liner formed by physical vapor deposition is filled with a tungsten film formed by chemical vapor deposition directly over the tungsten liner.

Abstract: The present invention discloses a carbon fiber spoke and a manufacturing method thereof. The carbon fiber spoke includes a spoke body made of carbon fiber, a screw bushing that is fit and connected with rim and a nut cap bushing that is fit and connected with the hub. Two end parts of the spoke body are provided with solid joints. The outside surface of the solid joint is provided with a first tapered section. The screw bushing and the nut cap bushing are provided with penetrable mounting holes. The hole wall surrounding the mounting hole is provided with a second tapered section. The mounting hole of the screw bushing and the mounting hole of the nut cap bushing are respectively fixed to the two solid joints; the second tapered section of the mounting hole and the first tapered section of the solid joint are fit and connected together.