Patents by Inventor Feijue Liu

Feijue Liu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9269639
    Abstract: The present invention provides a method of detecting and measuring the alignment shift of the contacts relative to the gate structures. The method comprises: designing a test model array having different test model regions on the substrate; forming second conductivity type doped well regions, gate structures, and first conductivity type doped active regions in each of the test model regions; forming contacts in each of the test model region; scanning the test model array by an electron-beam inspector to obtain light-dark patterns of the contacts; and detecting and measuring the alignment shift of the contacts relative to the gate structures according to the light-dark patterns of the contacts and the critical dimensions of the transistors in the test model regions.
    Type: Grant
    Filed: September 30, 2013
    Date of Patent: February 23, 2016
    Assignee: Shanghai Huali Microelectronics Corporation
    Inventors: Rongwei Fan, Feijue Liu, Yin Long, Qiliang Ni, Hunglin Chen
  • Publication number: 20140377888
    Abstract: The present invention provides a method of detecting and measuring the alignment shift of the contacts relative to the gate structures. The method comprises: designing a test model array having different test model regions on the substrate; forming second conductivity type doped well regions, gate structures, and first conductivity type doped active regions in each of the test model regions; forming contacts in each of the test model region; scanning the test model array by an electron-beam inspector to obtain light-dark patterns of the contacts; and detecting and measuring the alignment shift of the contacts relative to the gate structures according to the light-dark patterns of the contacts and the critical dimensions of the transistors in the test model regions.
    Type: Application
    Filed: September 30, 2013
    Publication date: December 25, 2014
    Inventors: Rongwei Fan, Feijue Liu, Yin Long, Qiliang Ni, Hunglin Chen