Abstract: A solid state device used to modulate the intensity of reflected or transmitted light by modulating with an external voltage the optical thickness of a thin film ferroelectric placed in an etalon cavity is disclosed. The device is constructed by selecting a generally planar supporting substrate, preferably silicon or sapphire in order to be compatible with silicon integrated circuits. A dielectric stack consisting of alternating layers of different index of refraction materials, also specifically selected to be compatible with later growth of the thin film ferroelectric, is deposited thereon to form a partially reflective and partially transmitting mirror, followed by a transparent electrically conductive layer. The thin film ferroelectric is deposited on the conductive layer, followed by a second transparent conductive layer and a second dielectric stack. Leads are connected to the conductive layers and in turn to a voltage generator.

Abstract: There is provided a device for use with fiber-optic cables for polarization insensitive amplitude modulation of light comprising a planar electro-optic layer with a reflective conductive mirror electrode on one side and a pair of transparent conductive electrodes on the other. The transparent conductive electrodes have a small separation along a straight line. A GRIN lens has one end in optical contact with the transparent conductive electrodes with its axis located over the line separating the electrodes. An input optical fiber and an output optical fiber are placed in optical contact with the other end of the lens at points which are symmetrically displaced from the axis of the lens. Light coming from input fiber is collimated by the GRIN lens and directed to the transparent electrodes, through the electro-optic layer and to the mirror from which it is reflected and refocused by the GRIN lens onto the output fiber.