Abstract: Embodiments of systems and methods for dicing a bonded structure are provided. A method for dicing a bonded structure includes thinning a top surface and a bottom surface of a bonded structure. The bonded structure may have a first wafer and a second wafer bonded with a bonding interface. The method may also include forming a series of ablation structures in the first wafer and the second wafer. The series of ablation structures may be between a first part and a second part of the bonded structure. The method may also include separating the first part and the second part of the bonded structure along the series of ablation structures.

Abstract: Embodiments of systems and methods for dicing a bonded structure are provided. A method includes the following operations. First, a scan pattern can be determined for forming a series of ablation structures in the bonded structure. Relative positions between the series of ablation structures and a bonding interface of the bonded structure can then be determined. The bonding surface may be between a first wafer and a second wafer. At least one of one or more focal planes or a depth of focus of a laser beam may be determined based on the relative positions between the series of ablation structures and the bonding interface. Further, the laser beam may be determined. The laser beam has a series of pulsed lasers. Further, the laser beam may be moved in the bonded structure according to the scan pattern to form the series of ablation structures in the bonded structure.

Abstract: Embodiments of systems and methods for dicing a bonded structure are provided. A method for dicing a bonded structure includes thinning a top surface and a bottom surface of a bonded structure. The bonded structure may have a first wafer and a second wafer bonded with a bonding interface. The method may also include forming a series of ablation structures in the first wafer and the second wafer. The series of ablation structures may be between a first part and a second part of the bonded structure. The method may also include separating the first part and the second part of the bonded structure along the series of ablation structures.

Abstract: Embodiments of systems and methods for dicing a bonded structure are provided. A method includes the following operations. First, a scan pattern can be determined for forming a series of ablation structures in the bonded structure. Relative positions between the series of ablation structures and a bonding interface of the bonded structure can then be determined. The bonding surface may be between a first wafer and a second wafer. At least one of one or more focal planes or a depth of focus of a laser beam may be determined based on the relative positions between the series of ablation structures and the bonding interface. Further, the laser beam may be determined. The laser beam has a series of pulsed lasers. Further, the laser beam may be moved in the bonded structure according to the scan pattern to form the series of ablation structures in the bonded structure.