Patents by Inventor Feiyue Li

Feiyue Li has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11928893
    Abstract: An action recognition method includes: obtaining original feature submaps of each of temporal frames on a plurality of convolutional channels by using a multi-channel convolutional layer; calculating, by using each of the temporal frames as a target temporal frame, motion information weights of the target temporal frame on the convolutional channels according to original feature submaps of the target temporal frame and original feature submaps of a next temporal frame, and obtaining motion information feature maps of the target temporal frame on the convolutional channels according to the motion information weights; performing temporal convolution on the motion information feature maps of the target temporal frame to obtain temporal motion feature maps of the target temporal frame; and recognizing an action type of a moving object in image data of the target temporal frame according to the temporal motion feature maps of the target temporal frame on the convolutional channels.
    Type: Grant
    Filed: November 18, 2021
    Date of Patent: March 12, 2024
    Assignee: TENCENT TECHNOLOGY (SHENZHEN) COMPANY LIMITED
    Inventors: Donghao Luo, Yabiao Wang, Chenyang Guo, Boyuan Deng, Chengjie Wang, Jilin Li, Feiyue Huang, Yongjian Wu
  • Patent number: 11916504
    Abstract: An energy conversion device is provided. The energy conversion device includes a reversible pulse-width modulation (PWM) rectifier (102) and a motor coil (103). The motor coil (103) includes L sets of winding units, and each set of winding unit is connected with the reversible PWM rectifier (102), where L?2 and is a positive integer. At least two sets of heating circuits of a to-be-heated device are formed by an external power supply (100), the reversible PWM rectifier (102), and the winding units in the motor coil (103). The energy conversion device controls the reversible PWM rectifier (102) according to a control signal, so that a current outputted from the external power supply (100) flows through at least two sets of winding units in the motor coil (103) to generate heat.
    Type: Grant
    Filed: August 18, 2020
    Date of Patent: February 27, 2024
    Assignee: BYD COMPANY LIMITED
    Inventors: Heping Ling, Jicheng Li, Changjiu Liu, Feiyue Xie, Yuxin Zhang
  • Patent number: 9466319
    Abstract: A Perpendicular Magnetic Recording (PMR) writer is disclosed with an all wrap around (AWA) shield design in which one or more of the leading shield, second trailing shield, and side shields consist of a high damping (HD) magnetic material having a damping constant ?0.04. A first trailing shield between the write gap and second trailing shield is a 19-24 kG hot seed layer. The HD magnetic layer may be FeNiRe with a Re content of 3 to 15 atomic %. Preferably, the HD magnetic layer has a coercivity <50 Oe and is a 10-19 kG material. One or both of the main pole leading and trailing sides may be tapered. Wide adjacent track erasure is minimized while area density capability is maintained. In other embodiments, the HD magnetic material may be one of FeNiM, FeNM, FeCoM, or FeCoNiM where M is a 3d, 4d, or 5d transition metal.
    Type: Grant
    Filed: September 8, 2015
    Date of Patent: October 11, 2016
    Assignee: Headway Technologies, Inc.
    Inventors: Yuhui Tang, Yaguang Wei, Yue Liu, Moris Dovek, Xiaomin Liu, Feiyue Li, Po-Kang Wang, Luc Thomas
  • Patent number: 8568909
    Abstract: A magnetic layer that may serve as a top pole layer and bottom pole layer in a magnetic write head is disclosed. The magnetic layer has a composition represented by FeWCoXNiYVZ in which w, x, y, and z are the atomic % of Fe, Co, Ni, and V, respectively, and where w is between about 60 and 85, x is between about 10 and 30, y is between 0 and about 20, z is between about 0.1 and 3, and wherein w+x+y+z=100. An electroplating process having a plating current density of 3 to 30 mA/cm2 is used to deposit the magnetic layer and involves an electrolyte solution with a small amount of VOSO4 which is the V source. The resulting magnetic layer has a magnetic saturation flux density BS greater than 1.9 Telsa and a resistivity ? higher than 70 ?ohms-cm.
    Type: Grant
    Filed: May 11, 2012
    Date of Patent: October 29, 2013
    Assignee: Headway Technologies, Inc.
    Inventors: Feiyue Li, Xiaomin Liu
  • Patent number: 8345383
    Abstract: A non-conformal integrated side shield structure is disclosed for a PMR write head wherein the sidewalls of the side shield are not parallel to the pole tip sidewalls. Thus, the side gap distance between the leading pole tip edge and side shield is different than the side gap distance between the trailing pole tip edge and side shield. As a result, there is a reduced side fringing field and improved overwrite performance. The side gap distance is constant with increasing distance from the ABS along the main pole layer. A fabrication method is provided where the trailing shield and side shield are formed in the same step to afford a self-aligned shield structure. Adjacent track erasure induced by flux choking at the side shield and trailing shield interface can be eliminated by this design. The invention encompasses a tapered main pole layer in a narrow pole tip section.
    Type: Grant
    Filed: September 22, 2011
    Date of Patent: January 1, 2013
    Assignee: Headway Technologies, Inc.
    Inventors: Cherng-Chyi Yan, Feiyue Li, Shiwen Huang, Jiun-Ting Lee, Yoshitaka Sasaki
  • Publication number: 20120225321
    Abstract: A magnetic layer that may serve as a top pole layer and bottom pole layer in a magnetic write head is disclosed. The magnetic layer has a composition represented by FeWCoXNiYVZ in which w, x, y, and z are the atomic % of Fe, Co, Ni, and V, respectively, and where w is between about 60 and 85, x is between about 10 and 30, y is between 0 and about 20, z is between about 0.1 and 3, and wherein w+x+y+z=100. An electroplating process having a plating current density of 3 to 30 mA/cm2 is used to deposit the magnetic layer and involves an electrolyte solution with a small amount of VOSO4 which is the V source. The resulting magnetic layer has a magnetic saturation flux density BS greater than 1.9 Telsa and a resistivity ? higher than 70 ?ohms-cm.
    Type: Application
    Filed: May 11, 2012
    Publication date: September 6, 2012
    Applicant: HEADWAY TECHNOLOGIES, INC.
    Inventors: Feiyue Li, Xiaomin Liu
  • Publication number: 20120145551
    Abstract: A process is described for the fabrication, through electrodeposition, of FexCoyNiz (x=60-71, y=25-35, z=0-5) films that have, in their as-deposited form, a saturation magnetization of at least 24 kG and a coercivity of less than 0.3 Oe. A key feature is the addition of aryl sulfinates to the plating bath along with a suitable seed layer.
    Type: Application
    Filed: February 20, 2012
    Publication date: June 14, 2012
    Applicant: HEADWAY TECHNOLOGIES, INC.
    Inventors: Xiaomin Liu, Feiyue Li, Cherng-Chyi Han
  • Patent number: 8177955
    Abstract: A magnetic layer that may serve as a top pole layer and bottom pole layer in a magnetic write head is disclosed. The magnetic layer has a composition represented by FeWCoXNiYVZ in which w, x, y, and z are the atomic % of Fe, Co, Ni, and V, respectively, and where w is between about 60 and 85, x is between about 10 and 30, y is between 0 and about 20, z is between about 0.1 and 3, and wherein w+x+y+z=100. An electroplating process having a plating current density of 3 to 30 mA/cm2 is used to deposit the magnetic layer and involves an electrolyte solution with a small amount of VOSO4 which is the V source. The resulting magnetic layer has a magnetic saturation flux density BS greater than 1.9 Telsa and a resistivity ? higher than 70 ?ohms-cm.
    Type: Grant
    Filed: June 3, 2004
    Date of Patent: May 15, 2012
    Assignee: Headway Technologies, Inc.
    Inventors: Feiyue Li, Xiaomin Liu
  • Patent number: 8118990
    Abstract: A process is described for the fabrication, through electrodeposition, of FexCoyNiz (x=60-71, y=25-35, z=0-5) films that have, in their as-deposited form, a saturation magnetization of at least 24 kG and a coercivity of less than 0.3 Oe. A key feature is the addition of aryl sulfinates to the plating bath along with a suitable seed layer.
    Type: Grant
    Filed: May 10, 2006
    Date of Patent: February 21, 2012
    Assignee: Headway Technologies, Inc.
    Inventors: Xiaomin Liu, Feiyue Li, Cherng-Chyi Han
  • Publication number: 20120012555
    Abstract: A non-conformal integrated side shield structure is disclosed for a PMR write head wherein the sidewalls of the side shield are not parallel to the pole tip sidewalls. Thus, the side gap distance between the leading pole tip edge and side shield is different than the side gap distance between the trailing pole tip edge and side shield. As a result, there is a reduced side fringing field and improved overwrite performance. The side gap distance is constant with increasing distance from the ABS along the main pole layer. A fabrication method is provided where the trailing shield and side shield are formed in the same step to afford a self-aligned shield structure. Adjacent track erasure induced by flux choking at the side shield and trailing shield interface can be eliminated by this design. The invention encompasses a tapered main pole layer in a narrow pole tip section.
    Type: Application
    Filed: September 22, 2011
    Publication date: January 19, 2012
    Inventors: Cherng-Chyi Yan, Feiyue Li, Shiwen Huang, Jiun-Ting Lee, Yoshitaka Sasaki
  • Patent number: 8031433
    Abstract: A non-conformal integrated side shield structure is disclosed for a PMR write head wherein the sidewalls of the side shield are not parallel to the pole tip sidewalls. Thus, the side gap distance between the leading pole tip edge and side shield is different than the side gap distance between the trailing pole tip edge and side shield. As a result, there is a reduced side fringing field and improved overwrite performance. The side gap distance is constant with increasing distance from the ABS along the main pole layer. A fabrication method is provided where the trailing shield and side shield are formed in the same step to afford a self-aligned shield structure. Adjacent track erasure induced by flux choking at the side shield and trailing shield interface can be eliminated by this design. The invention encompasses a tapered main pole layer in a narrow pole tip section.
    Type: Grant
    Filed: September 5, 2008
    Date of Patent: October 4, 2011
    Assignee: Headway Technologies, Inc.
    Inventors: Cherng-Chyi Yan, Feiyue Li, Shiwen Huang, Jiun-Ting Lee, Yoshitaka Sasaki
  • Publication number: 20100061016
    Abstract: A non-conformal integrated side shield structure is disclosed for a PMR write head wherein the sidewalls of the side shield are not parallel to the pole tip sidewalls. Thus, the side gap distance between the leading pole tip edge and side shield is different than the side gap distance between the trailing pole tip edge and side shield. As a result, there is a reduced side fringing field and improved overwrite performance. The side gap distance is constant with increasing distance from the ABS along the main pole layer. A fabrication method is provided where the trailing shield and side shield are formed in the same step to afford a self-aligned shield structure. Adjacent track erasure induced by flux choking at the side shield and trailing shield interface can be eliminated by this design. The invention encompasses a tapered main pole layer in a narrow pole tip section.
    Type: Application
    Filed: September 5, 2008
    Publication date: March 11, 2010
    Inventors: Cherng-Chyi Han, Feiyue Li, Shiwen Huang, Jiun-Ting Lee, Yoshitaka Sasaki
  • Publication number: 20080197021
    Abstract: A process sequence for forming a soft magnetic layer having Hce and Hch of ?2 Oe, Hk?5 Oe, and Bs of ?24 kG is disclosed. A CoFe or CoFe alloy is electroplated in a 10O C to 25O C. bath (pH 2 to 3) containing Co+2 and Fe+2 ions in addition to boric acid and one or more aryl sulfinate salts to promote magnetic softness in the deposited layer. Peak current density is 30 to 60 mA/cm2. A two step magnetic anneal process is performed to further improve softness. An easy axis anneal is followed by a hard axis anneal or vice versa. In an embodiment where the magnetic layer is a pole layer in a write head, the temperature is maintained in a 180O C to 250O C range and the applied magnetic field is kept a 300 Oe or below to prevent degradation of an adjacent read head.
    Type: Application
    Filed: February 16, 2007
    Publication date: August 21, 2008
    Inventors: Xiaomin Liu, Cherng-Chyi Han, Feiyue Li
  • Publication number: 20070261967
    Abstract: A process is described for the fabrication, through electrodeposition, of FexCoyNiz (x=60-71, y=25-35, z=0-5) films that have, in their as-deposited form, a saturation magnetization of at least 24 kG and a coercivity of less than 0.3 Oe. A key feature is the addition of aryl sulfinates to the plating bath along with a suitable seed layer.
    Type: Application
    Filed: May 10, 2006
    Publication date: November 15, 2007
    Inventors: Xiaomin Liu, Feiyue Li, Cherng-Chyi Han
  • Publication number: 20050271904
    Abstract: A magnetic layer that may serve as a top pole layer and bottom pole layer in a magnetic write head is disclosed. The magnetic layer has a composition represented by FewCoxNiyVz in which w, x, y, and z are the atomic % of Fe, Co, Ni, and V, respectively, and where w is between about 60 and 85, x is between about 10 and 30, y is between 0 and about 20, z is between about 0.1 and 3, and wherein w+x+y+z=100. An electroplating process having a plating current density of 3 to 30 mA/cm2 is used to deposit the magnetic layer and involves an electrolyte solution with a small amount of VOSO4 which is the V source. The resulting magnetic layer has a magnetic saturation flux density Bs greater than 1.9 Telsa and a resistivity ? higher than 70 ?ohms-cm.
    Type: Application
    Filed: June 3, 2004
    Publication date: December 8, 2005
    Inventors: Feiyue Li, Xiaomin Liu
  • Publication number: 20030085131
    Abstract: High density magnetic recording requires the write head materials to have high saturation magnetic flux density. Preparation of such materials has been achieved by providing an aqueous solution of nickel, iron, and cobalt salts, each present within a specified concentration range, together with selected additives. When used, under the specified operating conditions, as the electrolyte during electro-deposition, said solution provides a ferromagnetic layer having improved magnetic properties, particularly high saturation magnetic flux density. One embodiment of the process teaches formation of pole tips for use in a magnetic write head.
    Type: Application
    Filed: November 6, 2001
    Publication date: May 8, 2003
    Applicant: Headway Technologies, Inc.
    Inventors: Feiyue Li, Chyu Jiun Torng, Cherng-Chyi Han