Abstract: A method for producing nanoplates derived from a layered material, includes the steps: (a) mixing particles of said layered material with a carrier liquid to form a dispersion of said particles in said carrier liquid; (b) pressurizing the dispersion to a pressure of at least 10 kpsi; and (c) forcing the dispersion along a microfluidic channel under said pressure, to apply a shear rate of at least 105 s?1 to said particles in the dispersion. Exfoliation of nanoplates from said particles is thereby caused. The nanoplates may be graphene nanoplates, for example. Steps (b) and (c) may be repeated for a number of cycles in order to promote exfoliation. The method may be carried out using a microfluidizer.

Abstract: A flexible electronic component in this disclosure comprises a flexible fabric substrate and a smoothing layer formed on the flexible fabric substrate. A layer of nanoplatelets derived from a layered material is deposited on the smoothing layer by inkjet printing. The layer of nanoplatelets may form a first layer of a first nanoplatelet material and there may be provided at least a second layer, of a different nanoplatelet material, formed at least in part on the first layer. First and second electrodes are provided in contact respectively with the first and second layers.

Abstract: A method for producing nanoplates derived from a layered material, includes the steps: (a) mixing particles of said layered material with a carrier liquid to form a dispersion of said particles in said carrier liquid; (b) pressurizing the dispersion to a pressure of at least 10 kpsi; and (c) forcing the dispersion along a microfluidic channel under said pressure, to apply a shear rate of at least 105 s?1 to said particles in the dispersion. Exfoliation of nanoplates from said particles is thereby caused. The nanoplates may be graphene nanoplates, for example. Steps (b) and (c) may be repeated for a number of cycles in order to promote exfoliation. The method may be carried out using a microfluidizer.

Abstract: An ink disclosed herein comprises a carrier liquid with a dispersion of flakes derived from a layered material. The thickness of each flake depends on the number of layers of the layered material in the flake. The thickness distribution of the flakes includes: at least 20% by number of single layer flakes; at least 40% by number cumulatively of single, double and triple layer flakes; or not more than 40% by number of flakes having ten or more layers. The layered material is selected from one or more of elemental materials such as graphene (typically derived from pristine graphite), metals (e.g., NiTe2, VSe2), semi-metals (e.g., WTa2, TcS2), semiconductors (e.g., WS2, WSe2, MoS2, MoTe2, TaS2, RhTe2, PdTe2), insulators (e.g., h-BN, HfS2), superconductors (e.g., NbS2, NbSe2, NbTe2, TaSe2) and topological insulators and thermo-electrics (e.g., Bi2Se3, Bi2Te3). Also disclosed are methods of manufacturing suitable inks and uses of the inks.

Abstract: A graphene composite, and method of making and using the graphene composite.

Abstract: An ink disclosed herein comprises a carrier liquid with a dispersion of flakes derived from a layered material. The thickness of each flake depends on the number of layers of the layered material in the flake. The thickness distribution of the flakes includes: at least 20% by number of single layer flakes; at least 40% by number cumulatively of single, double and triple layer flakes; or not more than 40% by number of flakes having ten or more layers. The layered material is selected from one or more of elemental materials such as graphene (typically derived from pristine graphite), metals (e.g., NiTe2, VSe2), semi-metals (e.g., WTa2, TcS2), semiconductors (e.g., WS2, WSe2, MoS2, MoTe2, TaS2, RhTe2, PdTe2), insulators (e.g., h-BN, HfS2), superconductors (e.g., NbS2, NbSe2, NbTe2, TaSe2) and topological insulators and thermo-electrics (e.g., Bi2Se3, Bi2Te3). Also disclosed are methods of manufacturing suitable inks and uses of the inks.

Abstract: A variable impedance circuit includes at least one fixed resistance and a plurality of transistors between a first and a second terminal. The transistors belonging to the plurality of transistors are arranged parallel to one another and parallel to the resistance and are controllable by a plurality of control signals different from one another and configured in such a way as to obtain a total impedance between said first and second terminals that is substantially variable in a continuous manner.

Abstract: The present invention refers to a cascode amplifier suitable for amplifying a voltage signal present on the input terminal. The amplifier comprises at least one first transistor comprising a non-drivable input terminal that coincides with the input terminal of the amplifier, a non-drivable output terminal and a drivable terminal connected to a first polarization voltage. The amplifier comprises in addition at least one second transistor comprising a non-drivable input terminal in common with the output terminal of the first transistor, an output terminal non-drivable connected to a second polarization voltage and a drivable terminal.

Abstract: A device converts a differential signal (Vin1, Vin2) to a single signal (Vout). The device includes at least one pair of transistors (Q1, Q2) having equal transconductance gain (gm) and arranged according a differential stage configuration. The transistors (Q1, Q2) have the differential signal (Vin1, Vin2) in input at the drivable terminals, have first non drivable terminals coupled respectively to first terminals of a first (R1) and a second (Rout) passive elements having second terminals connected with a first supply voltage (VDD), second non drivable terminals coupled to a second supply voltage (VEE) lower than the first supply voltage (VDD). The first terminal of the second passive element (Rout) is the output terminal (OUT) of the device.

Abstract: The present invention refers to a cascode amplifier suitable for amplifying a voltage signal present on the input terminal. The amplifier comprises at least one first transistor comprising a non-drivable input terminal that coincides with the input terminal of the amplifier, a non-drivable output terminal and a drivable terminal connected to a first polarisation voltage. The amplifier comprises in addition at least one second transistor comprising a non-drivable input terminal in common with the output terminal of the first transistor, an output terminal non-drivable connected to a second polarisation voltage and a drivable terminal.

Abstract: A device converts a differential signal (Vin1, Vin2) to a single signal (Vout). The device includes at least one pair of transistors (Q1, Q2) having equal transconductance gain (gm) and arranged according a differential stage configuration. The transistors (Q1, Q2) have the differential signal (Vin1, Vin2) in input at the drivable terminals, have first non drivable terminals coupled respectively to first terminals of a first (R1) and a second (Rout) passive elements having second terminals connected with a first supply voltage (VDD), second non drivable terminals coupled to a second supply voltage (VEE) lower than the first supply voltage (VDD). The first terminal of the second passive element (Rout) is the output terminal (OUT) of the device.