Abstract: A conductive strap structure in lateral contact with a top semiconductor layer is formed on an inner electrode of a deep trench capacitor. A cavity overlying the conductive strap structure is filled a dielectric material to form a dielectric capacitor cap having a top surface that is coplanar with a topmost surface of an upper pad layer. A semiconductor mandrel in lateral contact with the dielectric capacitor cap is formed. The combination of the dielectric capacitor cap and the semiconductor mandrel is employed as a protruding structure around which a fin-defining spacer is formed. The semiconductor mandrel is removed, and the fin-defining spacer is employed as an etch mask in an etch process that etches a lower pad layer and the top semiconductor layer to form a semiconductor fin that laterally wraps around the conductive strap structure. An access finFET is formed employing two parallel portions of the semiconductor fin.

Abstract: A conductive strap structure in lateral contact with a top semiconductor layer is formed on an inner electrode of a deep trench capacitor. A cavity overlying the conductive strap structure is filled a dielectric material to form a dielectric capacitor cap having a top surface that is coplanar with a topmost surface of an upper pad layer. A semiconductor mandrel in lateral contact with the dielectric capacitor cap is formed. The combination of the dielectric capacitor cap and the semiconductor mandrel is employed as a protruding structure around which a fin-defining spacer is formed. The semiconductor mandrel is removed, and the fin-defining spacer is employed as an etch mask in an etch process that etches a lower pad layer and the top semiconductor layer to form a semiconductor fin that laterally wraps around the conductive strap structure. An access finFET is formed employing two parallel portions of the semiconductor fin.

Abstract: A conductive strap structure in lateral contact with a top semiconductor layer is formed on an inner electrode of a deep trench capacitor. A cavity overlying the conductive strap structure is filled a dielectric material to form a dielectric capacitor cap having a top surface that is coplanar with a topmost surface of an upper pad layer. A semiconductor mandrel in lateral contact with the dielectric capacitor cap is formed. The combination of the dielectric capacitor cap and the semiconductor mandrel is employed as a protruding structure around which a fin-defining spacer is formed. The semiconductor mandrel is removed, and the fin-defining spacer is employed as an etch mask in an etch process that etches a lower pad layer and the top semiconductor layer to form a semiconductor fin that laterally wraps around the conductive strap structure. An access finFET is formed employing two parallel portions of the semiconductor fin.

Abstract: A conductive strap structure in lateral contact with a top semiconductor layer is formed on an inner electrode of a deep trench capacitor. A cavity overlying the conductive strap structure is filled a dielectric material to form a dielectric capacitor cap having a top surface that is coplanar with a topmost surface of an upper pad layer. A semiconductor mandrel in lateral contact with the dielectric capacitor cap is formed. The combination of the dielectric capacitor cap and the semiconductor mandrel is employed as a protruding structure around which a fin-defining spacer is formed. The semiconductor mandrel is removed, and the fin-defining spacer is employed as an etch mask in an etch process that etches a lower pad layer and the top semiconductor layer to form a semiconductor fin that laterally wraps around the conductive strap structure. An access finFET is formed employing two parallel portions of the semiconductor fin.

Abstract: A method and installation for analyzing an integrated circuit. The method includes, for a plurality of surface points of the integrated circuit, the following steps: applying a laser radiation, in one point of the surface of the integrated circuit; exciting the circuit; collecting the response of the circuit to the excitation; calculating the propagation time intervening between the excitation time and the response-collecting time; and creating an image of the integrated circuit showing a value representing the propagation time at each point of laser radiation application.

Abstract: A device (16) used to measure at least one component of a magnetic field, includes a magnetoresistive sensor (102) and a measuring chain (28). The input of the measuring chain is connected to the magnetoresistive sensor (102), while the output thereof is intended to supply information that is representative of the magnetic field in the region of the sensor. In addition, the measuring chain (28) includes elements (136) for isolating a frequency component of the signal from the sensor representative of the magnetic field for a unique pre-determined frequency (FI).

Abstract: A magnetic-field-measuring probe includes at least one magnetoresistive or magnetoinductive sensor which is sensitive to the magnetic field along a privileged measurement axis. The probe includes: at least two magnetoresistive or magnetoinductive sensors (14, 16) which are rigidly connected to one another in a position such that the privileged measurement axes thereof are parallel and offset in relation to one another in a direction that is transverse to the privileged measurement axes; and output terminals specific to each magnetoresistive or magnetoinductive sensor, in order to supply a signal that is representative of the magnetic field measured by each sensor along the privileged measurement axis thereof.

Abstract: A magnetic-field-measuring probe includes at least two magnetoresistive sensors which are sensitive to respective magnetic fields along a determined measurement axis. The at least two magnetoresistive sensors are rigidly connected to one another in a position such that the measurement axes thereof are at an angle other than zero. Output terminals specific to each magnetoresistive sensor are used to supply a signal that is representative of the field measured by each sensor along the measurement axis thereof. The difference between the derivative of a first magnetic field relative to a second direction and the derivative of a second magnetic field relative to a first direction is calculated to determine a component of current to be measured.

Abstract: The invention concerns a method for analyzing an integrated circuit. The method includes, for a plurality of surface points of the integrated circuit, following steps: applying (102) a laser radiation, in one point of the surface of the integrated circuit; exciting (106) the circuit; collecting (108) the response of the circuit to the excitation; calculating (114) the propagation time intervening between the excitation time and the response-collecting time; and creating (116) an image of the integrated circuit showing a value representing the propagation time at each point of laser radiation application. The invention also concerns an installation for analyzing an integrated circuit.

Abstract: A magnetic-field-measuring probe includes at least one magnetoresistive or magnetoinductive sensor which is sensitive to the magnetic field along a privileged measurement axis. The probe includes: at least two magnetoresistive or magnetoinductive sensors (14, 16) which are rigidly connected to one another in a position such that the privileged measurement axes thereof are parallel and offset in relation to one another in a direction that is transverse to the privileged measurement axes; and output terminals specific to each magnetoresistive or magnetoinductive sensor, in order to supply a signal that is representative of the magnetic field measured by each sensor along the privileged measurement axis thereof.

Abstract: The invention relates to a magnetic-field-measuring probe comprising at least one magnetoresistive sensor (102, 104, 106) which is sensitive to the magnetic field along a determined privileged measurement axis. The inventive probe comprises: at least two magnetoresistive sensors (102, 104, 106) which are rigidly connected to one another in a position such that the privileged measurement axes thereof are offset angularly; and output terminals specific to each magnetoresistive sensor (102, 104, 106), in order to supply a signal that is representative of the field measured by each sensor along the privileged measurement axis thereof.

Abstract: A device (16) used to measure at least one component of a magnetic field, includes a magnetoresistive sensor (102) and a measuring chain (28). The input of the measuring chain is connected to the magnetoresistive sensor (102), while the output thereof is intended to supply information that is representative of the magnetic field in the region of the sensor. In addition, the measuring chain (28) includes elements (136) for isolating a frequency component of the signal from the sensor representative of the magnetic field for a unique pre-determined frequency (FI).

Abstract: A method and apparatus for laser-assisted fault mapping which synchronizes the laser control with the tester unit. The inventive method provides for laser-assisted pseudo-static fault mapping to localize defects in a device whose inputs are being stimulated dynamically by a tester. It further provides for laser-assisted dynamic soft error mapping, to localize in terms of location and to correlate with respect to a specific test vector, sensitive areas in a device by utilizing device performance criteria such as pass-fail status outputs. The apparatus includes a fully controllable dynamic laser stimulation apparatus connected to a control unit that provides complete synchronization with a tester unit.

Abstract: A method and apparatus for laser-assisted fault mapping which synchronizes the laser control with the tester unit. The inventive method provides for laser-assisted pseudo-static fault mapping to localize defects in a device whose inputs are being stimulated dynamically by a tester. It further provides for laser-assisted dynamic soft error mapping, to localize in terms of location and to correlate with respect to a specific test vector, sensitive areas in a device by utilizing device performance criteria such as pass-fail status outputs. The apparatus includes a fully controllable dynamic laser stimulation apparatus connected to a control unit that provides complete synchronization with a tester unit.