Abstract: A method is presented for producing a silicon solar cell with a back-etched emitter preferably with a selective emitter and a corresponding solar cell. According to one aspect, the method comprises the following method steps: producing a two-dimensionally extending emitter at an emitter surface of a solar cell substrate; applying an etching barrier onto first partial zones of the emitter surface; etching the emitter surface in second partial zones of the emitter surface not covered by the etching barrier; removing the etching barrier; and producing metal contacts at the first partial zones. During the method, especially during the etching of the emitter surface in the second partial zones, a porous silicon layer is advantageously produced, which is then oxidized. This oxidized porous silicon layer can subsequently be etched away together with any phosphorus glass that may be present.

Abstract: A method is presented for producing a silicon solar cell with a back-etched emitter preferably with a selective emitter and a corresponding solar cell. According to one aspect, the method comprises the following method steps: producing a two-dimensionally extending emitter at an emitter surface of a solar cell substrate; applying an etching barrier onto first partial zones of the emitter surface; etching the emitter surface in second partial zones of the emitter surface not covered by the etching barrier; removing the etching barrier; and producing metal contacts at the first partial zones. During the method, especially during the etching of the emitter surface in the second partial zones, a porous silicon layer is advantageously produced, which is then oxidised. This oxidised porous silicon layer can subsequently be etched away together with any phosphorus glass that may be present.