Abstract: A transistor includes: gate electrodes and field electrodes, wherein in each case one gate electrode and one field electrode are arranged one above another in a vertical direction in a common trench of a semiconductor body; a gate pad to which the gate electrodes are connected; and a source metallization arranged above the semiconductor body. The field electrodes of a first group include at least one contact section. The at least one contact section is arranged between two sections of a gate electrode arranged in the same trench and is connected to the source metallization. The two sections of the gate electrode are separated from one another in a region of the contact section. At least one of the two sections of the gate electrode arranged in the same trench is electrically connected to a gate electrode arranged in a further trench by way of a gate connecting electrode.

Abstract: A transistor includes: gate electrodes and field electrodes, wherein in each case one gate electrode and one field electrode are arranged one above another in a vertical direction in a common trench of a semiconductor body; a gate pad to which the gate electrodes are connected; and a source metallization arranged above the semiconductor body. The field electrodes of a first group include at least one contact section. The at least one contact section is arranged between two sections of a gate electrode arranged in the same trench and is connected to the source metallization. The two sections of the gate electrode are separated from one another in a region of the contact section. At least one of the two sections of the gate electrode arranged in the same trench is electrically connected to a gate electrode arranged in a further trench by way of a gate connecting electrode.