Patents by Inventor Felix Ejeckam
Felix Ejeckam has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11594466Abstract: A high efficiency satellite transmitter comprises an RF amplifier chip in thermal contact with a radiant cooling element via a heat conducting element. The RF amplifier chip comprises an active layer disposed on a high thermal conductivity substrate having a thermal conductivity greater than about 1000 W/mK, maximizing heat conduction out of the RF amplifier chip and ultimately into outer space when the chip is operating within a satellite under normal transmission conditions. In one embodiment, the active layer comprises materials selected from the group consisting of GaN, InGaN, AlGaN, and InGaAlN alloys. In one embodiment, the high thermal conductivity substrate comprises synthetic diamond.Type: GrantFiled: September 15, 2020Date of Patent: February 28, 2023Assignee: Akash Systems, Inc.Inventors: Felix Ejeckam, Tyrone D. Mitchell, Jr., Paul Saunier
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Patent number: 11495515Abstract: Aspects of wireless communication are described, including a radiofrequency (RF) amplifier chip, configured for transmitting or receiving data, comprising a first substrate comprising a first material and a second substrate comprising a second material that is different from the first material. The first substrate and the second substrate may be lattice-matched such that an interface region between the first substrate and the second substrate exhibits an sp3 carbon peak at about 1332 cm·1 having a full width half maximum of no more than 5.0 cm·1 as measured by Raman spectroscopy. In some aspects, the first substrate and said second substrate permit said chip to transmit or receive data at a transfer rate of at least 500 megabits per second and a frequency of at least 8 GHz. In some aspects, the RF amplifier chip is part of a satellite transmitter.Type: GrantFiled: August 31, 2020Date of Patent: November 8, 2022Assignee: AKASH SYSTEMS, INC.Inventors: Tyrone D. Mitchell, Jr., Felix Ejeckam, Daniel Francis, Paul Saunier, Kris Kong
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Publication number: 20220189846Abstract: Aspects of diamond growth on semiconductors are described. Some aspects include direct growth of synthetic diamond on wide-bandgap semiconductors without the use of nucleating layers or protective layers. Some aspects include generating synthetic diamond over a gallium nitride surface of a layered structure in accordance with a set of growth parameters that are generated based at least in part on an interface property of an interface generated between the gallium nitride surface and the synthetic diamond. In some aspects, the interface is a single interface between the synthetic diamond and the gallium nitride surface. In some aspects, the synthetic diamond is in contact with the gallium nitride surface. Some aspects include synthetic diamond growth on wide-bandgap semiconductor structures to achieve thermal extraction without introducing electrically conductive regions in the semiconductor structure. Such aspects may include generating less than optimal quality synthetic diamond.Type: ApplicationFiled: December 20, 2021Publication date: June 16, 2022Inventors: Daniel FRANCIS, Felix EJECKAM, Tyrone D. MITCHELL, JR., Paul SAUNIER
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Publication number: 20210242106Abstract: A high efficiency satellite transmitter comprises an RF amplifier chip in thermal contact with a radiant cooling element via a heat conducting element. The RF amplifier chip comprises an active layer disposed on a high thermal conductivity substrate having a thermal conductivity greater than about 1000 W/mK, maximizing heat conduction out of the RF amplifier chip and ultimately into outer space when the chip is operating within a satellite under normal transmission conditions. In one embodiment, the active layer comprises materials selected from the group consisting of GaN, InGaN, AlGaN, and InGaAlN alloys. In one embodiment, the high thermal conductivity substrate comprises synthetic diamond.Type: ApplicationFiled: September 15, 2020Publication date: August 5, 2021Inventors: Felix EJECKAM, Tyrone D. Mitchell, JR., Paul Saunier
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Publication number: 20210234511Abstract: An RF amplifier module comprises a package having a package base, at least one RF amplifier chip attached to the package base, and an RF power combiner chip attached to the package base. The RF amplifier chip comprises a substrate and at least one transistor disposed on an epilayer overlying the substrate. The substrate comprises a first layer of synthetic diamond characterized by an average value of thermal conductivity. An RF amplifier module comprises a package having a package base, at least one RF amplifier chip attached to the package base, and an RF power combiner chip attached to the package base. The RF amplifier chip comprises a substrate and at least one transistor disposed on an epilayer overlying the substrate.Type: ApplicationFiled: September 8, 2020Publication date: July 29, 2021Inventors: Felix EJECKAM, Tyrone D. MITCHELL, JR., Paul SAUNIER
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Patent number: 10985082Abstract: Aspects of wireless communication are described, including a radiofrequency (RF) amplifier chip, configured for transmitting or receiving data, comprising a first substrate comprising a first material and a second substrate comprising a second material that is different from the first material. The first substrate and the second substrate may be lattice-matched such that an interface region between the first substrate and the second substrate exhibits an sp3 carbon peak at about 1332 cm·1 having a full width half maximum of no more than 5.0 cm·1 as measured by Raman spectroscopy. In some aspects, the first substrate and said second substrate permit said chip to transmit or receive data at a transfer rate of at least 500 megabits per second and a frequency of at least 8 GHz. In some aspects, the RF amplifier chip is part of a satellite transmitter.Type: GrantFiled: August 31, 2020Date of Patent: April 20, 2021Assignee: Akash Systems, Inc.Inventors: Tyrone D. Mitchell, Jr., Felix Ejeckam, Daniel Francis, Paul Saunier, Kris Kong
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Publication number: 20200402974Abstract: Aspects of wireless communication are described, including a radiofrequency (RF) amplifier chip, configured for transmitting or receiving data, comprising a first substrate comprising a first material and a second substrate comprising a second material that is different from the first material. The first substrate and the second substrate may be lattice-matched such that an interface region between the first substrate and the second substrate exhibits an sp3 carbon peak at about 1332 cm?1 having a full width half maximum of no more than 5.0 cm?1 as measured by Raman spectroscopy. In some aspects, the first substrate and said second substrate permit said chip to transmit or receive data at a transfer rate of at least 500 megabits per second and a frequency of at least 8 GHz. In some aspects, the RF amplifier chip is part of a satellite transmitter.Type: ApplicationFiled: August 31, 2020Publication date: December 24, 2020Inventors: Tyrone D. Mitchell, JR., Felix Ejeckam, Daniel Francis, Paul Saunier, Kris Kong, Ralph Ewig
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Publication number: 20200402973Abstract: Aspects of wireless communication are described, including a radiofrequency (RF) amplifier chip, configured for transmitting or receiving data, comprising a first substrate comprising a first material and a second substrate comprising a second material that is different from the first material. The first substrate and the second substrate may be lattice-matched such that an interface region between the first substrate and the second substrate exhibits an sp3 carbon peak at about 1332 cm?1 having a full width half maximum of no more than 5.0 cm?1 as measured by Raman spectroscopy. In some aspects, the first substrate and said second substrate permit said chip to transmit or receive data at a transfer rate of at least 500 megabits per second and a frequency of at least 8 GHz. In some aspects, the RF amplifier chip is part of a satellite transmitter.Type: ApplicationFiled: August 31, 2020Publication date: December 24, 2020Inventors: Tyrone D. Mitchell, JR., Felix Ejeckam, Daniel Francis, Paul Saunier, Kris Kong, Ralph Ewig
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Patent number: 10811335Abstract: A high efficiency satellite transmitter comprises an RF amplifier chip in thermal contact with a radiant cooling element via a heat conducting element. The RF amplifier chip comprises an active layer disposed on a high thermal conductivity substrate having a thermal conductivity greater than about 1000 W/mK, maximizing heat conduction out of the RF amplifier chip and ultimately into outer space when the chip is operating within a satellite under normal transmission conditions. In one embodiment, the active layer comprises materials selected from the group consisting of GaN, InGaN, AlGaN, and InGaAlN alloys. In one embodiment, the high thermal conductivity substrate comprises synthetic diamond.Type: GrantFiled: May 6, 2019Date of Patent: October 20, 2020Assignee: Akash Systems, Inc.Inventors: Felix Ejeckam, Tyrone D. Mitchell, Jr., Paul Saunier
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Patent number: 10804853Abstract: An RF amplifier module comprises a package having a package base, at least one RF amplifier chip attached to the package base, and an RF power combiner chip attached to the package base. The RF amplifier chip comprises a substrate and at least one transistor disposed on an epilayer overlying the substrate. The substrate comprises a first layer of synthetic diamond characterized by an average value of thermal conductivity. An RF amplifier module comprises a package having a package base, at least one RF amplifier chip attached to the package base, and an RF power combiner chip attached to the package base. The RF amplifier chip comprises a substrate and at least one transistor disposed on an epilayer overlying the substrate. A first layer of synthetic diamond is at least partially disposed on top of the electronic device.Type: GrantFiled: June 18, 2019Date of Patent: October 13, 2020Assignee: Akash Systems, Inc.Inventors: Felix Ejeckam, Tyrone D. Mitchell, Jr., Paul Saunier
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Patent number: 10586850Abstract: Methods for mounting and dismounting thin and/or bowed semiconductor-on-diamond wafers to a carrier are disclosed that flatten said wafers and provide mechanical support to enable efficient semiconductor device processing on said semiconductor-on-diamond wafers.Type: GrantFiled: December 5, 2017Date of Patent: March 10, 2020Assignee: RFHIC CorporationInventors: Quentin Diduck, Daniel Francis, Frank Yantis Lowe, Felix Ejeckam
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Publication number: 20200044608Abstract: An RF amplifier module comprises a package having a package base, at least one RF amplifier chip attached to the package base, and an RF power combiner chip attached to the package base. The RF amplifier chip comprises a substrate and at least one transistor disposed on an epilayer overlying the substrate. The substrate comprises a first layer of synthetic diamond characterized by an average value of thermal conductivity. An RF amplifier module comprises a package having a package base, at least one RF amplifier chip attached to the package base, and an RF power combiner chip attached to the package base. The RF amplifier chip comprises a substrate and at least one transistor disposed on an epilayer overlying the substrate.Type: ApplicationFiled: June 18, 2019Publication date: February 6, 2020Inventors: Felix Ejeckam, Tyrone D. Mitchell, JR., Paul Saunier
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Publication number: 20200006189Abstract: A high efficiency satellite transmitter comprises an RF amplifier chip in thermal contact with a radiant cooling element via a heat conducting element. The RF amplifier chip comprises an active layer disposed on a high thermal conductivity substrate having a thermal conductivity greater than about 1000 W/mK, maximizing heat conduction out of the RF amplifier chip and ultimately into outer space when the chip is operating within a satellite under normal transmission conditions. In one embodiment, the active layer comprises materials selected from the group consisting of GaN, InGaN, AlGaN, and InGaAlN alloys. In one embodiment, the high thermal conductivity substrate comprises synthetic diamond.Type: ApplicationFiled: May 6, 2019Publication date: January 2, 2020Inventors: Felix Ejeckam, Tyrone D. Mitchell, JR., Paul Saunier
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Patent number: 10374553Abstract: An RF amplifier module comprises a package having a package base, at least one RF amplifier chip attached to the package base, and an RF power combiner chip attached to the package base. The RF amplifier chip comprises a substrate and at least one transistor disposed on an epilayer overlying the substrate. The substrate comprises a first layer of synthetic diamond characterized by an average value of thermal conductivity. An RF amplifier module comprises a package having a package base, at least one RF amplifier chip attached to the package base, and an RF power combiner chip attached to the package base. The RF amplifier chip comprises a substrate and at least one transistor disposed on an epilayer overlying the substrate. A first layer of synthetic diamond is at least partially disposed on top of the electronic device.Type: GrantFiled: June 15, 2017Date of Patent: August 6, 2019Assignee: Akash Systems, Inc.Inventors: Felix Ejeckam, Tyrone D Mitchell, Jr., Paul Saunier
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Patent number: 10332820Abstract: A high efficiency satellite transmitter comprises an RF amplifier chip in thermal contact with a radiant cooling element via a heat conducting element. The RF amplifier chip comprises an active layer disposed on a high thermal conductivity substrate having a thermal conductivity greater than about 1000 W/mK, maximizing heat conduction out of the RF amplifier chip and ultimately into outer space when the chip is operating within a satellite under normal transmission conditions. In one embodiment, the active layer comprises materials selected from the group consisting of GaN, InGaN, AlGaN, and InGaAlN alloys. In one embodiment, the high thermal conductivity substrate comprises synthetic diamond.Type: GrantFiled: March 20, 2017Date of Patent: June 25, 2019Assignee: Akash Systems, Inc.Inventors: Felix Ejeckam, Tyrone D Mitchell, Jr., Paul Saunier
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Publication number: 20180367100Abstract: An RF amplifier module comprises a package having a package base, at least one RF amplifier chip attached to the package base, and an RF power combiner chip attached to the package base. The RF amplifier chip comprises a substrate and at least one transistor disposed on an epilayer overlying the substrate. The substrate comprises a first layer of synthetic diamond characterized by an average value of thermal conductivity. An RF amplifier module comprises a package having a package base, at least one RF amplifier chip attached to the package base, and an RF power combiner chip attached to the package base. The RF amplifier chip comprises a substrate and at least one transistor disposed on an epilayer overlying the substrate.Type: ApplicationFiled: June 15, 2017Publication date: December 20, 2018Inventors: Felix Ejeckam, Tyrone D. Mitchell, JR., Paul Saunier
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Publication number: 20180269130Abstract: A high efficiency satellite transmitter comprises an RF amplifier chip in thermal contact with a radiant cooling element via a heat conducting element. The RF amplifier chip comprises an active layer disposed on a high thermal conductivity substrate having a thermal conductivity greater than about 1000 W/mK, maximizing heat conduction out of the RF amplifier chip and ultimately into outer space when the chip is operating within a satellite under normal transmission conditions. In one embodiment, the active layer comprises materials selected from the group consisting of GaN, InGaN, AlGaN, and InGaAlN alloys. In one embodiment, the high thermal conductivity substrate comprises synthetic diamond.Type: ApplicationFiled: March 20, 2017Publication date: September 20, 2018Inventors: Felix Ejeckam, Tyrone D. Mitchell, JR., Paul Saunier
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Publication number: 20180108739Abstract: Methods for mounting and dismounting thin and/or bowed semiconductor-on-diamond wafers to a carrier are disclosed that flatten said wafers and provide mechanical support to enable efficient semiconductor device processing on said semiconductor-on-diamond wafers.Type: ApplicationFiled: December 5, 2017Publication date: April 19, 2018Applicant: RFHIC CorporationInventors: Quentin Diduck, Daniel Francis, Frank Yantis Lowe, Felix Ejeckam
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Patent number: 9359693Abstract: A method for integrating wide-gap semiconductors, and specifically, gallium nitride epilayers, with synthetic diamond substrates is disclosed. Diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited or formed on a layered structure that comprises at least one layer of gallium nitride. Methods for manufacturing GaN-on-diamond wafers with low bow and high crystalline quality are disclosed along with preferred choices for manufacturing GaN-on-diamond wafers and chips tailored to specific applications.Type: GrantFiled: February 28, 2013Date of Patent: June 7, 2016Assignee: ELEMENT SIX TECHNOLOGIES US CORPORATIONInventors: Daniel Francis, Firooz Faili, Kristopher Matthews, Frank Yantis Lowe, Quentin Diduck, Sergey Zaytsev, Felix Ejeckam
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Patent number: 8945966Abstract: Methods for integrating wide-gap semiconductors with synthetic diamond substrates are disclosed. Diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited or formed on a layered structure including at least one layer of gallium nitride, aluminum nitride, silicon carbide, or zinc oxide. The resulting structure is a low stress process compatible with wide-gap semiconductor films, and may be processed into optical or high-power electronic devices. The diamond substrates serve as heat sinks or mechanical substrates.Type: GrantFiled: September 10, 2012Date of Patent: February 3, 2015Assignee: Element Six Technologies US CorporationInventors: Daniel Francis, Felix Ejeckam, John Wasserbauer, Dubravko Babic