Patents by Inventor Felix Ejeckam

Felix Ejeckam has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11495515
    Abstract: Aspects of wireless communication are described, including a radiofrequency (RF) amplifier chip, configured for transmitting or receiving data, comprising a first substrate comprising a first material and a second substrate comprising a second material that is different from the first material. The first substrate and the second substrate may be lattice-matched such that an interface region between the first substrate and the second substrate exhibits an sp3 carbon peak at about 1332 cm·1 having a full width half maximum of no more than 5.0 cm·1 as measured by Raman spectroscopy. In some aspects, the first substrate and said second substrate permit said chip to transmit or receive data at a transfer rate of at least 500 megabits per second and a frequency of at least 8 GHz. In some aspects, the RF amplifier chip is part of a satellite transmitter.
    Type: Grant
    Filed: August 31, 2020
    Date of Patent: November 8, 2022
    Assignee: AKASH SYSTEMS, INC.
    Inventors: Tyrone D. Mitchell, Jr., Felix Ejeckam, Daniel Francis, Paul Saunier, Kris Kong
  • Publication number: 20220189846
    Abstract: Aspects of diamond growth on semiconductors are described. Some aspects include direct growth of synthetic diamond on wide-bandgap semiconductors without the use of nucleating layers or protective layers. Some aspects include generating synthetic diamond over a gallium nitride surface of a layered structure in accordance with a set of growth parameters that are generated based at least in part on an interface property of an interface generated between the gallium nitride surface and the synthetic diamond. In some aspects, the interface is a single interface between the synthetic diamond and the gallium nitride surface. In some aspects, the synthetic diamond is in contact with the gallium nitride surface. Some aspects include synthetic diamond growth on wide-bandgap semiconductor structures to achieve thermal extraction without introducing electrically conductive regions in the semiconductor structure. Such aspects may include generating less than optimal quality synthetic diamond.
    Type: Application
    Filed: December 20, 2021
    Publication date: June 16, 2022
    Inventors: Daniel FRANCIS, Felix EJECKAM, Tyrone D. MITCHELL, JR., Paul SAUNIER
  • Publication number: 20210242106
    Abstract: A high efficiency satellite transmitter comprises an RF amplifier chip in thermal contact with a radiant cooling element via a heat conducting element. The RF amplifier chip comprises an active layer disposed on a high thermal conductivity substrate having a thermal conductivity greater than about 1000 W/mK, maximizing heat conduction out of the RF amplifier chip and ultimately into outer space when the chip is operating within a satellite under normal transmission conditions. In one embodiment, the active layer comprises materials selected from the group consisting of GaN, InGaN, AlGaN, and InGaAlN alloys. In one embodiment, the high thermal conductivity substrate comprises synthetic diamond.
    Type: Application
    Filed: September 15, 2020
    Publication date: August 5, 2021
    Inventors: Felix EJECKAM, Tyrone D. Mitchell, JR., Paul Saunier
  • Publication number: 20210234511
    Abstract: An RF amplifier module comprises a package having a package base, at least one RF amplifier chip attached to the package base, and an RF power combiner chip attached to the package base. The RF amplifier chip comprises a substrate and at least one transistor disposed on an epilayer overlying the substrate. The substrate comprises a first layer of synthetic diamond characterized by an average value of thermal conductivity. An RF amplifier module comprises a package having a package base, at least one RF amplifier chip attached to the package base, and an RF power combiner chip attached to the package base. The RF amplifier chip comprises a substrate and at least one transistor disposed on an epilayer overlying the substrate.
    Type: Application
    Filed: September 8, 2020
    Publication date: July 29, 2021
    Inventors: Felix EJECKAM, Tyrone D. MITCHELL, JR., Paul SAUNIER
  • Patent number: 10985082
    Abstract: Aspects of wireless communication are described, including a radiofrequency (RF) amplifier chip, configured for transmitting or receiving data, comprising a first substrate comprising a first material and a second substrate comprising a second material that is different from the first material. The first substrate and the second substrate may be lattice-matched such that an interface region between the first substrate and the second substrate exhibits an sp3 carbon peak at about 1332 cm·1 having a full width half maximum of no more than 5.0 cm·1 as measured by Raman spectroscopy. In some aspects, the first substrate and said second substrate permit said chip to transmit or receive data at a transfer rate of at least 500 megabits per second and a frequency of at least 8 GHz. In some aspects, the RF amplifier chip is part of a satellite transmitter.
    Type: Grant
    Filed: August 31, 2020
    Date of Patent: April 20, 2021
    Assignee: Akash Systems, Inc.
    Inventors: Tyrone D. Mitchell, Jr., Felix Ejeckam, Daniel Francis, Paul Saunier, Kris Kong
  • Publication number: 20200402974
    Abstract: Aspects of wireless communication are described, including a radiofrequency (RF) amplifier chip, configured for transmitting or receiving data, comprising a first substrate comprising a first material and a second substrate comprising a second material that is different from the first material. The first substrate and the second substrate may be lattice-matched such that an interface region between the first substrate and the second substrate exhibits an sp3 carbon peak at about 1332 cm?1 having a full width half maximum of no more than 5.0 cm?1 as measured by Raman spectroscopy. In some aspects, the first substrate and said second substrate permit said chip to transmit or receive data at a transfer rate of at least 500 megabits per second and a frequency of at least 8 GHz. In some aspects, the RF amplifier chip is part of a satellite transmitter.
    Type: Application
    Filed: August 31, 2020
    Publication date: December 24, 2020
    Inventors: Tyrone D. Mitchell, JR., Felix Ejeckam, Daniel Francis, Paul Saunier, Kris Kong, Ralph Ewig
  • Publication number: 20200402973
    Abstract: Aspects of wireless communication are described, including a radiofrequency (RF) amplifier chip, configured for transmitting or receiving data, comprising a first substrate comprising a first material and a second substrate comprising a second material that is different from the first material. The first substrate and the second substrate may be lattice-matched such that an interface region between the first substrate and the second substrate exhibits an sp3 carbon peak at about 1332 cm?1 having a full width half maximum of no more than 5.0 cm?1 as measured by Raman spectroscopy. In some aspects, the first substrate and said second substrate permit said chip to transmit or receive data at a transfer rate of at least 500 megabits per second and a frequency of at least 8 GHz. In some aspects, the RF amplifier chip is part of a satellite transmitter.
    Type: Application
    Filed: August 31, 2020
    Publication date: December 24, 2020
    Inventors: Tyrone D. Mitchell, JR., Felix Ejeckam, Daniel Francis, Paul Saunier, Kris Kong, Ralph Ewig
  • Patent number: 10811335
    Abstract: A high efficiency satellite transmitter comprises an RF amplifier chip in thermal contact with a radiant cooling element via a heat conducting element. The RF amplifier chip comprises an active layer disposed on a high thermal conductivity substrate having a thermal conductivity greater than about 1000 W/mK, maximizing heat conduction out of the RF amplifier chip and ultimately into outer space when the chip is operating within a satellite under normal transmission conditions. In one embodiment, the active layer comprises materials selected from the group consisting of GaN, InGaN, AlGaN, and InGaAlN alloys. In one embodiment, the high thermal conductivity substrate comprises synthetic diamond.
    Type: Grant
    Filed: May 6, 2019
    Date of Patent: October 20, 2020
    Assignee: Akash Systems, Inc.
    Inventors: Felix Ejeckam, Tyrone D. Mitchell, Jr., Paul Saunier
  • Patent number: 10804853
    Abstract: An RF amplifier module comprises a package having a package base, at least one RF amplifier chip attached to the package base, and an RF power combiner chip attached to the package base. The RF amplifier chip comprises a substrate and at least one transistor disposed on an epilayer overlying the substrate. The substrate comprises a first layer of synthetic diamond characterized by an average value of thermal conductivity. An RF amplifier module comprises a package having a package base, at least one RF amplifier chip attached to the package base, and an RF power combiner chip attached to the package base. The RF amplifier chip comprises a substrate and at least one transistor disposed on an epilayer overlying the substrate. A first layer of synthetic diamond is at least partially disposed on top of the electronic device.
    Type: Grant
    Filed: June 18, 2019
    Date of Patent: October 13, 2020
    Assignee: Akash Systems, Inc.
    Inventors: Felix Ejeckam, Tyrone D. Mitchell, Jr., Paul Saunier
  • Patent number: 10586850
    Abstract: Methods for mounting and dismounting thin and/or bowed semiconductor-on-diamond wafers to a carrier are disclosed that flatten said wafers and provide mechanical support to enable efficient semiconductor device processing on said semiconductor-on-diamond wafers.
    Type: Grant
    Filed: December 5, 2017
    Date of Patent: March 10, 2020
    Assignee: RFHIC Corporation
    Inventors: Quentin Diduck, Daniel Francis, Frank Yantis Lowe, Felix Ejeckam
  • Publication number: 20200044608
    Abstract: An RF amplifier module comprises a package having a package base, at least one RF amplifier chip attached to the package base, and an RF power combiner chip attached to the package base. The RF amplifier chip comprises a substrate and at least one transistor disposed on an epilayer overlying the substrate. The substrate comprises a first layer of synthetic diamond characterized by an average value of thermal conductivity. An RF amplifier module comprises a package having a package base, at least one RF amplifier chip attached to the package base, and an RF power combiner chip attached to the package base. The RF amplifier chip comprises a substrate and at least one transistor disposed on an epilayer overlying the substrate.
    Type: Application
    Filed: June 18, 2019
    Publication date: February 6, 2020
    Inventors: Felix Ejeckam, Tyrone D. Mitchell, JR., Paul Saunier
  • Publication number: 20200006189
    Abstract: A high efficiency satellite transmitter comprises an RF amplifier chip in thermal contact with a radiant cooling element via a heat conducting element. The RF amplifier chip comprises an active layer disposed on a high thermal conductivity substrate having a thermal conductivity greater than about 1000 W/mK, maximizing heat conduction out of the RF amplifier chip and ultimately into outer space when the chip is operating within a satellite under normal transmission conditions. In one embodiment, the active layer comprises materials selected from the group consisting of GaN, InGaN, AlGaN, and InGaAlN alloys. In one embodiment, the high thermal conductivity substrate comprises synthetic diamond.
    Type: Application
    Filed: May 6, 2019
    Publication date: January 2, 2020
    Inventors: Felix Ejeckam, Tyrone D. Mitchell, JR., Paul Saunier
  • Patent number: 10374553
    Abstract: An RF amplifier module comprises a package having a package base, at least one RF amplifier chip attached to the package base, and an RF power combiner chip attached to the package base. The RF amplifier chip comprises a substrate and at least one transistor disposed on an epilayer overlying the substrate. The substrate comprises a first layer of synthetic diamond characterized by an average value of thermal conductivity. An RF amplifier module comprises a package having a package base, at least one RF amplifier chip attached to the package base, and an RF power combiner chip attached to the package base. The RF amplifier chip comprises a substrate and at least one transistor disposed on an epilayer overlying the substrate. A first layer of synthetic diamond is at least partially disposed on top of the electronic device.
    Type: Grant
    Filed: June 15, 2017
    Date of Patent: August 6, 2019
    Assignee: Akash Systems, Inc.
    Inventors: Felix Ejeckam, Tyrone D Mitchell, Jr., Paul Saunier
  • Patent number: 10332820
    Abstract: A high efficiency satellite transmitter comprises an RF amplifier chip in thermal contact with a radiant cooling element via a heat conducting element. The RF amplifier chip comprises an active layer disposed on a high thermal conductivity substrate having a thermal conductivity greater than about 1000 W/mK, maximizing heat conduction out of the RF amplifier chip and ultimately into outer space when the chip is operating within a satellite under normal transmission conditions. In one embodiment, the active layer comprises materials selected from the group consisting of GaN, InGaN, AlGaN, and InGaAlN alloys. In one embodiment, the high thermal conductivity substrate comprises synthetic diamond.
    Type: Grant
    Filed: March 20, 2017
    Date of Patent: June 25, 2019
    Assignee: Akash Systems, Inc.
    Inventors: Felix Ejeckam, Tyrone D Mitchell, Jr., Paul Saunier
  • Publication number: 20180367100
    Abstract: An RF amplifier module comprises a package having a package base, at least one RF amplifier chip attached to the package base, and an RF power combiner chip attached to the package base. The RF amplifier chip comprises a substrate and at least one transistor disposed on an epilayer overlying the substrate. The substrate comprises a first layer of synthetic diamond characterized by an average value of thermal conductivity. An RF amplifier module comprises a package having a package base, at least one RF amplifier chip attached to the package base, and an RF power combiner chip attached to the package base. The RF amplifier chip comprises a substrate and at least one transistor disposed on an epilayer overlying the substrate.
    Type: Application
    Filed: June 15, 2017
    Publication date: December 20, 2018
    Inventors: Felix Ejeckam, Tyrone D. Mitchell, JR., Paul Saunier
  • Publication number: 20180269130
    Abstract: A high efficiency satellite transmitter comprises an RF amplifier chip in thermal contact with a radiant cooling element via a heat conducting element. The RF amplifier chip comprises an active layer disposed on a high thermal conductivity substrate having a thermal conductivity greater than about 1000 W/mK, maximizing heat conduction out of the RF amplifier chip and ultimately into outer space when the chip is operating within a satellite under normal transmission conditions. In one embodiment, the active layer comprises materials selected from the group consisting of GaN, InGaN, AlGaN, and InGaAlN alloys. In one embodiment, the high thermal conductivity substrate comprises synthetic diamond.
    Type: Application
    Filed: March 20, 2017
    Publication date: September 20, 2018
    Inventors: Felix Ejeckam, Tyrone D. Mitchell, JR., Paul Saunier
  • Publication number: 20180108739
    Abstract: Methods for mounting and dismounting thin and/or bowed semiconductor-on-diamond wafers to a carrier are disclosed that flatten said wafers and provide mechanical support to enable efficient semiconductor device processing on said semiconductor-on-diamond wafers.
    Type: Application
    Filed: December 5, 2017
    Publication date: April 19, 2018
    Applicant: RFHIC Corporation
    Inventors: Quentin Diduck, Daniel Francis, Frank Yantis Lowe, Felix Ejeckam
  • Patent number: 9359693
    Abstract: A method for integrating wide-gap semiconductors, and specifically, gallium nitride epilayers, with synthetic diamond substrates is disclosed. Diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited or formed on a layered structure that comprises at least one layer of gallium nitride. Methods for manufacturing GaN-on-diamond wafers with low bow and high crystalline quality are disclosed along with preferred choices for manufacturing GaN-on-diamond wafers and chips tailored to specific applications.
    Type: Grant
    Filed: February 28, 2013
    Date of Patent: June 7, 2016
    Assignee: ELEMENT SIX TECHNOLOGIES US CORPORATION
    Inventors: Daniel Francis, Firooz Faili, Kristopher Matthews, Frank Yantis Lowe, Quentin Diduck, Sergey Zaytsev, Felix Ejeckam
  • Patent number: 8945966
    Abstract: Methods for integrating wide-gap semiconductors with synthetic diamond substrates are disclosed. Diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited or formed on a layered structure including at least one layer of gallium nitride, aluminum nitride, silicon carbide, or zinc oxide. The resulting structure is a low stress process compatible with wide-gap semiconductor films, and may be processed into optical or high-power electronic devices. The diamond substrates serve as heat sinks or mechanical substrates.
    Type: Grant
    Filed: September 10, 2012
    Date of Patent: February 3, 2015
    Assignee: Element Six Technologies US Corporation
    Inventors: Daniel Francis, Felix Ejeckam, John Wasserbauer, Dubravko Babic
  • Patent number: 8759134
    Abstract: Methods for integrating wide-gap semiconductors, and specifically, gallium nitride epilayers with synthetic diamond substrates are disclosed. Diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited or formed on a layered structure that comprises at least one layer made out of gallium nitride. Methods for manufacturing GaN-on-diamond wafers with low bow and high crystalline quality are disclosed along with preferred choices for manufacturing GaN-on-diamond wafers and chips tailored to specific applications.
    Type: Grant
    Filed: January 24, 2014
    Date of Patent: June 24, 2014
    Assignee: Element Six Technologies US Corporation
    Inventors: Felix Ejeckam, Daniel Francis, Quentin Diduck, Firooz Nasser-Faili, Dubravko Babić