Abstract: The present invention provides a battery module system including a plurality of battery modules in a series electrical connection through a specified sequence, each battery module having a male connector and a female connector, the female connector of each battery module in electrical engagement into the male connector of an adjacent battery module, wherein the male connector and female connector are positioned along the sidewall of each battery module and have insulating structures that protect handlers of the battery modules from high voltage electrocution. The present invention also provides a battery module system in which the male and female connectors are attached to a top surface of each battery module.

Abstract: An electropolishing process in integrated circuit fabrication on a wafer includes applying a stream of electrolyte to the wafer using a nozzle positioned adjacent to the wafer with a gap between the nozzle and the wafer. The removal rate uniformity of the electropolishing process is controlled by adjusting the gap between the nozzle and the wafer to adjust the removal rate profile of the stream of electrolyte applied by the nozzle.

Abstract: A metal layer formed on a wafer, the wafer having a center portion and an edge portion, is electropolished by aligning a nozzle and the wafer to position the nozzle adjacent to the center portion of the wafer. The wafer is rotated. As the wafer is rotated, a stream of electrolyte is applied from the nozzle onto a portion of the metal layer adjacent to the center portion of the wafer to begin to electropolish the portion of the metal layer with a triangular polishing profile to initially expose an underlying layer underneath the metal layer at a point.

Abstract: In one aspect of the present invention, exemplary apparatus and methods are provided for electropolishing and/or electroplating processes for semiconductor wafers. One exemplary apparatus includes a cleaning module having an edge clean assembly (930) to remove metal residue on the bevel or edge portion of a wafer (901). The edge cleaning apparatus includes a nozzle head (1030) configured to supply a liquid and a gas to a major surface of the wafer, and supplies the gas radially inward of the location the liquid is supplied to reduce the potential of the liquid from flowing radially inward to the metal film formed on the wafer.

Abstract: In one aspect of the present invention, an exemplary apparatus and method are provided for electropolishing a conductive film on a wafer. An apparatus includes a wafer chuck for holding a wafer, an actuator for rotating the wafer chuck, and a nozzle configured to electropolish the wafer. The apparatus may further include a conductive ring or a shroud. A method of electropolishing a conductive film on a wafer includes rotating a wafer chuck with sufficient speed such that electrolyte fluid incident upon the wafer flows on the surface of the wafer towards the edge of the wafer.

Abstract: A cell to electroplate and/or electropolish semiconductor wafers includes an electrolyte receptacle and a wafer chuck assembly. The cell also includes a first actuator configured to translate the wafer chuck assembly between a first position and a second position, where the wafer chuck assembly covers the electrolyte receptacle in the first position and retracts from the electrolyte receptacle in the second position.

Abstract: A wafer chuck assembly for holding a wafer during electroplating and/or electropolishing of the wafer includes a wafer chuck for receiving the wafer. The wafer chuck assembly also includes an actuator assembly for moving the wafer chuck between a first and a second position. When in the first position, the wafer chuck is opened. When in the second position, the wafer chuck is closed.