Patents by Inventor Felix Kaess

Felix Kaess has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Stress Management Layer for GaN HEMT
    Publication number: 20230097643
    Abstract: A high electron mobility transistor comprising a nucleation layer having a first lattice constant, a back-barrier layer having a second lattice constant and a stress management layer having a third lattice constant which is larger than both first and second lattice constants. The stress management layer compensates some or all of the stress due to the lattice mismatch between the nucleation layer and back barrier layer so that the resulting structure experiences less bow and warp.
    Type: Application
    Filed: September 22, 2022
    Publication date: March 30, 2023
    Applicant: IQE plc
    Inventors: Felix Kaess, Chen-Kai KAO, Oleg LABOUTIN