Abstract: The invention relates to a method or process for solution phase chemical manufacture of depsipeptides of the formula I, wherein the symbols have the meaning defined in the description, to new intermediates and their manufacture, as well as related invention embodiments.

Abstract: The invention relates to a mass spectrometer comprising an ion source for producing a primary ion beam, which has a heatable ion emitter coated by a liquid metal layer essentially comprised of pure metallic Bismuth or of a low-melting-point alloy containing, in essence, Bismuth. A Bismuth ion mixed beam can be emitted by the ion emitter under the influence of an electric field. From the Bismuth ion mixed beam, one of a number of Bismuth ion types whose mass is a multiple of monatomic singly or multiply charged Bismuth ions Bi1p+, is to be filtered out in the form of a mass-pure ion beam that is solely comprised of ions of a type Binp+, in which n?2 and p?1, and n and p are each a natural number.

Abstract: A mass spectrometer includes an ion source for producing a primary ion beam, which has a heatable ion emitter coated by a liquid metal layer essentially comprised of pure metallic bismuth or of a low-melting-point alloy containing, in essence, bismuth. A bismuth ion mixed beam can be emitted by the ion emitter under the influence of an electric field. From said bismuth ion mixed beam, one of a number of bismuth ion types whose mass is a multiple of monatomic singly or multiply charged bismuth ions Bi1p+, is to be filtered out in the form of a mass-pure ion beam that is solely comprised of ions of a type Binp+, in which n?2 and p?1, and n and p are each a natural number.

Abstract: The invention relates to a method or process for the chemical manufacture of depsipeptides of the formula I, wherein the symbols have the meaning defined in the description, to new intermediates and their manufacture, as well as related invention embodiments.

Abstract: The invention relates to a method or process for solution phase chemical manufacture of depsipeptides of the formula I, wherein the symbols have the meaning defined in the description, to new intermediates and their manufacture, as well as related invention embodiments.

Abstract: The invention relates to a method or process for solution phase chemical manufacture of depsipeptides of the formula I, wherein the symbols have the meaning defined in the description, to new intermediates and their manufacture, as well as related invention embodiments.

Abstract: The invention relates to a method or process for solution phase chemical manufacture of depsipeptides of the formula I, wherein the symbols have the meaning defined in the description, to new intermediates and their manufacture, as well as related invention embodiments.

Abstract: The invention relates to a method or process for the chemical manufacture of depsipeptides of the formula I, wherein the symbols have the meaning defined in the description, to new intermediates and their manufacture, as well as related invention embodiments.

Abstract: The invention relates to a method or process for the chemical manufacture of depsipeptides of the formula I, wherein the symbols have the meaning defined in the description, to new intermediates and their manufacture, as well as related invention embodiments.

Abstract: A liquid metal ion source for use in an ion mass spectrometric analysis method contains, on the one hand, a first metal with an atomic weight ?190 U and, on the other hand, another metal with an atomic weight ?90 U. One of the two types of ions are filtered out alternately from the primary ion beam and directed onto the target as a mass-pure primary ion beam.

Abstract: A liquid metal ion source for use in an ion mass spectrometric analysis method contains, on the one hand, a first metal with an atomic weight ?190 U and, on the other hand, another metal with an atomic weight ?90 U. One of the two types of ions are filtered out alternately from the primary ion beam and directed onto the target as a mass-pure primary ion beam.

Abstract: A mass spectrometric method according to the Gentle SIMS (G-SIMS) method uses a liquid metal ion source which contains, on the one hand, a first metal with an atomic weight ?190 U and, on the other hand, another metal with an atomic weight ?90 U. One of the two types of ions are filtered out alternately from the primary ion beam and directed onto the target as a mass-pure primary ion beam.

Abstract: The invention relates to a method or process for the chemical manufacture of depsipeptides of the formula I, wherein the symbols have the meaning defined in the description, to new intermediates and their manufacture, as well as related invention embodiments.

Abstract: The invention relates to a mass spectrometer comprising an ion source for producing a primary ion beam, which has a heatable ion emitter coated by a liquid metal layer essentially comprised of pure metallic Bismuth or of a low-melting-point alloy containing, in essence, Bismuth. A Bismuth ion mixed beam can be emitted by the ion emitter under the influence of an electric field. From the Bismuth ion mixed beam, one of a number of Bismuth ion types whose mass is a multiple of monatomic singly or multiply charged Bismuth ions Bi1p+, is to be filtered out in the form of a mass-pure ion beam that is solely comprised of ions of a type Binp+, in which n?2 and p?1, and n and p are each a natural number.

Abstract: A mass spectrometric method according to the Gentle SIMS (G-SIMS) method uses a liquid metal ion source which contains, on the one hand, a first metal with an atomic weight ?190 U and, on the other hand, another metal with an atomic weight ?90 U. One of the two types of ions are filtered out alternately from the primary ion beam and directed onto the target as a mass-pure primary ion beam.

Abstract: A mass spectrometer includes an ion source for producing a primary ion beam, which has a heatable ion emitter coated by a liquid metal layer essentially comprised of pure metallic bismuth or of a low-melting-point alloy containing, in essence, bismuth. A bismuth ion mixed beam can be emitted by the ion emitter under the influence of an electric field. From said bismuth ion mixed beam, one of a number of bismuth ion types whose mass is a multiple of monatomic singly or multiply charged bismuth ions Bi1p+, is to be filtered out in the form of a mass-pure ion beam that is solely comprised of ions of a type Binp+, in which n?2 and p?1, and n and p are each a natural number.