Patents by Inventor Felix Leib Kozakevich

Felix Leib Kozakevich has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Active control of radial etch uniformity
    Patent number: 10916409
    Abstract: Systems and methods for active control of radial etch uniformity are described. One of the methods includes generating a radio frequency (RF) signal having a fundamental frequency and generating another RF signal having a harmonic frequency. The harmonic frequency, or a phase, or a parameter level, or a combination thereof of the other RF signal are controlled to control harmonics of RF plasma sheath within a plasma chamber to achieve radial etch uniformity.
    Type: Grant
    Filed: June 18, 2018
    Date of Patent: February 9, 2021
    Assignee: Lam Research Corporation
    Inventors: Alexei Marakhtanov, Felix Leib Kozakevich, John Holland, Bing Ji, Kenneth Lucchesi
  • High Speed Synchronization Of Plasma Source/Bias Power Delivery
    Publication number: 20200411289
    Abstract: A radio frequency (RF) generator system includes first and second RF power sources, each RF power source applying a respective RF signal and second RF signal to a load. The first RF signal is applied in accordance with the application of the second RF signal. The application of the first RF signal is synchronized to application of the second RF signal. The first RF signal may be amplitude modulated in synchronization with the second RF signal, and the amplitude modulation can include blanking of the first RF signal. A frequency offset may be applied to the first RF signal in synchronization with the second RF signal. A variable actuator associated with the first RF power source may be controlled in accordance with the second RF signal.
    Type: Application
    Filed: June 26, 2019
    Publication date: December 31, 2020
    Inventors: Aaron T. RADOMSKI, Benjamin J. GITLIN, Larry J. FISK, II, Mariusz OLDZIEJ, Aaron M. BURRY, Jonathan W. SMYKA, Alexei MARAKHTANOV, Bing JI, Felix Leib KOZAKEVICH, John HOLLAND, Ranadeep BHOWMICK
  • Three or more states for achieving high aspect ratio dielectric etch
    Patent number: 10861708
    Abstract: Systems and methods for applying three or more states for achieving a high aspect ratio dielectric etch operation are described. In one of the methods, a middle state is introduced between a high state and a low state. The middle state is applied to both a source radio frequency (RF) generator and a bias radio frequency (RF) generator. During the middle state, RF power is maintained to be between a high amount of RF power associated with the high state and a low amount of RF power associated with the low state to achieve the high aspect ratio dielectric etch.
    Type: Grant
    Filed: November 21, 2019
    Date of Patent: December 8, 2020
    Assignee: Lam Research Corporation
    Inventors: Takumi Yanagawa, Nikhil Dole, Ranadeep Bhowmick, Eric Hudson, Felix Leib Kozakevich, John Holland, Alexei Marakhtanov, Bradford J. Lyndaker
  • THREE OR MORE STATES FOR ACHIEVING HIGH ASPECT RATIO DIELECTRIC ETCH
    Publication number: 20200090948
    Abstract: Systems and methods for applying three or more states for achieving a high aspect ratio dielectric etch operation are described. In one of the methods, a middle state is introduced between a high state and a low state. The middle state is applied to both a source radio frequency (RF) generator and a bias radio frequency (RF) generator. During the middle state, RF power is maintained to be between a high amount of RF power associated with the high state and a low amount of RF power associated with the low state to achieve the high aspect ratio dielectric etch.
    Type: Application
    Filed: November 21, 2019
    Publication date: March 19, 2020
    Inventors: Takumi Yanagawa, Nikhil Dole, Ranadeep Bhowmick, Eric Hudson, Felix Leib Kozakevich, John Holland, Alexei Marakhtanov, Bradford J. Lyndaker
  • ACTIVE CONTROL OF RADIAL ETCH UNIFORMITY
    Publication number: 20190385822
    Abstract: Systems and methods for active control of radial etch uniformity are described. One of the methods includes generating a radio frequency (RF) signal having a fundamental frequency and generating another RF signal having a harmonic frequency. The harmonic frequency, or a phase, or a parameter level, or a combination thereof of the other RF signal are controlled to control harmonics of RF plasma sheath within a plasma chamber to achieve radial etch uniformity.
    Type: Application
    Filed: June 18, 2018
    Publication date: December 19, 2019
    Inventors: Alexei Marakhtanov, Felix Leib Kozakevich, John Holland, Bing Ji, Kenneth Lucchesi
  • Three or more states for achieving high aspect ratio dielectric etch
    Patent number: 10504744
    Abstract: Systems and methods for applying three or more states for achieving a high aspect ratio dielectric etch operation are described. In one of the methods, a middle state is introduced between a high state and a low state. The middle state is applied to both a source radio frequency (RF) generator and a bias radio frequency (RF) generator. During the middle state, RF power is maintained to be between a high amount of RF power associated with the high state and a low amount of RF power associated with the low state to achieve the high aspect ratio dielectric etch.
    Type: Grant
    Filed: July 19, 2018
    Date of Patent: December 10, 2019
    Assignee: Lam Research Corporation
    Inventors: Takumi Yanagawa, Nikhil Dole, Ranadeep Bhowmick, Eric Hudson, Felix Leib Kozakevich, John Holland, Alexei Marakhtanov, Bradford J. Lyndaker