Abstract: An edge coupler, a waveguide structure and a method for forming a waveguide structure are provided. The edge coupler includes a substrate, a first cladding layer, a core layer and a first anti-reflection coating layer. The first cladding layer has a second sidewall aligned with a first sidewall of the substrate. The core layer has a third sidewall aligned with the second sidewall. The anti-reflection coating layer lines the first sidewall, the second sidewall and the third sidewall. A thickness of the anti-reflection coating layer varies along the first sidewall, the second sidewall and the third sidewall.

Abstract: An edge coupler has a wide end, a narrow end, and a tapering thickness. The narrow end is coupled to a waveguide in a photonic integrated circuit (PIC). The wide end is coupled to an optical transmitter or receiver. The edge coupler thickens by tapering downward into the buried oxide layer of a BOX substrate. An upper surface of the edge coupler may be planar. A pedestal may be formed in the oxide layer so that a laser diode mounted on the pedestal will be vertically aligned to the edge coupler. Alternatively, the pedestal may be formed in a substrate under the oxide layer so that the core of an optical fiber mounted on the pedestal will be vertically aligned to the edge coupler. The pedestal may be in a cavity that facilitates horizontal alignment between the laser diode, optical fiber, or other such device and the edge coupler.

Abstract: A semiconductor structure includes a grating coupler structure, a circuit component separated from the grating coupler structure, an inter level dielectric layer, a capping layer over the inter level dielectric layer, and a passivation layer over the capping layer. The inter level dielectric layer has a first refractive index, the capping layer has second refractive index, and the passivation layer has a third refractive index. The second refractive index is greater than the first refractive index, and is greater than the third refractive index.

Abstract: Some implementations described herein include a photonics integrated circuit device including a photonics structure. The photonics structure includes a waveguide structure and an optical attenuator structure. In some implementation, the optical attenuator structure is formed on an end region of the waveguide structure and includes a metal material or a doped material. In some implementations, the optical attenuator structure includes a gaussian doping profile within a portion of the waveguide structure. The optical attenuator structure may absorb electromagnetic waves at the end of the waveguide structure with an efficiency that is improved relative to a spiral optical attenuator structure or metal cap optical attenuator structure.

Abstract: Some embodiments relate to an integrated chip (IC) including a handle substrate; a semiconductor layer comprising a grating coupler region and an edge coupler region; an insulative layer between the handle substrate and the semiconductor layer; a grating coupler in the grating coupler region comprising a plurality of trenches arranged in the semiconductor layer; and an edge coupler in the edge coupler region of the semiconductor layer including: a base structure having an end proximate to an edge of the insulative layer, and tapered sidewalls extending laterally from the end; and an upper structure extending over the base structure, the upper structure having an end proximate to the edge of the insulative layer, and tapered sidewalls extending laterally from the end between the tapered sidewalls of the base structure; where the handle substrate continuously extends from directly beneath the plurality of trenches to directly beneath the upper structure.

Abstract: A semiconductor structure includes a substrate, a grating coupler structure over the substrate, a multi-layers film structure over the grating coupler structure. The multi-layers film structure include a first layer including a first refractive index, a second layer over the first layer and including a second refractive index and a third layer over the second layer and including a third refractive index. The second refractive index is greater than the first refractive index and is greater than the third refractive index of the third layer, and a thickness of each layer of the multi-layers film structure is within a range from ?/4 to ?2, ? is a wavelength of light.

Abstract: Various embodiments of the present disclosure are directed towards a photonic device including a temperature adjustment element. A first waveguide overlies an insulating layer. A second waveguide overlies the insulating layer. The temperature adjustment element includes a heater structure aligned with a segment of the first waveguide and a cooler structure aligned with a segment of the second waveguide. The heater structure is configured to increase a temperature of the segment of the first waveguide to a first temperature. The cooler structure is configured to reduce a temperature of the segment of the second waveguide to a second temperature less than the first temperature.

Abstract: A method for forming an optical waveguide structure includes following operations. A substrate is received. A semiconductor layer is formed on the substrate. The semiconductor layer is patterned to form at least a waveguide in the substrate and at least a trench in the semiconductor layer. A first gap-filling operation is performed to form a first dielectric portion in the trench. A second gap-filling operation is performed to form a second dielectric portion over the first dielectric portion. An air seam is sealed within the second dielectric portion. A third gap-filling operation is performed to form a third dielectric portion over the second dielectric portion.

Abstract: The present invention provides MDM2 inhibitor compounds of Formula I, wherein the variables are defined above, which compounds are useful as therapeutic agents, particularly for the treatment of cancers. The present invention also relates to pharmaceutical compositions that contain an MDM2 inhibitor.

Abstract: Some implementations described herein include a photonics integrated circuit device including a photonics structure. The photonics structure includes a waveguide structure and an optical attenuator structure. In some implementation, the optical attenuator structure is formed on an end region of the waveguide structure and includes a metal material or a doped material. In some implementations, the optical attenuator structure includes a gaussian doping profile within a portion of the waveguide structure. The optical attenuator structure may absorb electromagnetic waves at the end of the waveguide structure with an efficiency that is improved relative to a spiral optical attenuator structure or metal cap optical attenuator structure.

Abstract: Multiple storage system event handling includes obtaining multiple events for storage on multiple storage systems. For each of the multiple events, field values from each event are extracted. The field values are matched to configurations of the storage systems to identify a subset of the storage system having a matching configuration. The event is transmitted to the subset. The multiple events are transmitted to heterogeneous subsets.

Abstract: Ingest health monitoring includes receiving an event stream of events in a data intake and query system to store on at least one storage system and obtaining an event from the event stream. Ingest health monitoring further includes transmitting the event to a selected ingest module queue for the event, updating an output rate indicator counter for the selected ingest module queue when failure to store the event in the ingest module queue occurs, obtaining the event from the selected ingest module queue, processing the event to generate a file for the event, and transmitting the file to the at least one storage system. Ingest health monitoring further includes updating the write failure indicator counter for a storage system of the at least one storage system when failure to transmit to the storage system occurs and updating the user interface based on the output rate indicator counter and the write failure indicator counter.

Abstract: Various embodiments of the present disclosure are directed towards a semiconductor package comprising optically coupled integrated circuit (IC) chips. A first IC chip and a second IC chip overlie a substrate at a center of the substrate. A photonic chip overlies the first and second IC chips and is electrically coupled to the second IC chip. A laser device chip overlies the substrate, adjacent to the photonic chip and the second IC chip, at a periphery of the substrate. The photonic chip is configured to modulate a laser beam from the laser device chip in accordance with an electrical signal from the second IC chip and to provide the modulated laser beam to the first IC chip. This facilitates optical communication between the first IC chip to the second IC chip. Various embodiments of the present disclosure are further directed towards simultaneously aligning and bonding constituents of the semiconductor package.

Abstract: Methods and systems are described for proximity condition detection of a recovery from sensor proximity saturation caused by water immersion of a user device. The device transmits data at a first transmit power level using an antenna. In one system, a proximity condition checker determines that a first proximity sensor and a second proximity sensor are saturated in an unknown state after a power event where the saturation caused at least in part by the presence of water in proximity to the first proximity sensor and the second proximity sensor. The proximity condition checker determines that 1) both the first proximity sensor and the second proximity sensor are no longer saturated and 2) water is no longer in proximity to the first proximity sensor and the second proximity sensor. In response, the user device can transmit data at an increased second transmit power level using the antenna.

Abstract: In an implementation, an electronic device may obtain a configuration file from a device provider. The configuration file may include settings of a number of communications providers for communicating over a wireless wide area network. A subscriber identification module (SIM) card may include information, such as a communications provider identifier, that is utilized to determine the settings for a modem of the electronic device. Configuring the modem of the electronic device according to the settings may cause the modem to communicate over the wireless wide area network according to specifications of a particular communications provider of the plurality of communications providers.

Abstract: Techniques are described for dynamically tuning mobile device antennas. Input derived from multiple sources and representing a variety of scenarios is provided to the RF modem of a mobile device. The modem is configured to select antenna tuning settings based on this input, each of which tunes the antenna by modifying its impedance as appropriate for the corresponding scenario.

Abstract: In an implementation, an electronic device may obtain a configuration file from a device provider. The configuration file may include settings of a number of communications providers for communicating over a wireless wide area network. A subscriber identification module (SIM) card may include information, such as a communications provider identifier, that is utilized to determine the settings for a modem of the electronic device. Configuring the modem of the electronic device according to the settings may cause the modem to communicate over the wireless wide area network according to specifications of a particular communications provider of the plurality of communications providers.