Patents by Inventor Felix Recht

Felix Recht has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

METHOD TO FABRICATE III-N FIELD EFFECT TRANSISTORS USING ION IMPLANTATION WITH REDUCED DOPANT ACTIVATION AND DAMAGE RECOVERY TEMPERATURE

Publication number: 20080258150

Abstract: Structures to reduce dopant activation temperatures for ion implantation in III-N transistors, using low aluminum content layers in proximity to the conducting channel, are disclosed. A method to increase the temperature at which structures can be annealed by annealing in an active nitrogen ambient, for example, in NH3 in a metalorganic chemical vapor deposition (MOCVD) chamber, is also disclosed.

Type: Application

Filed: March 10, 2008

Publication date: October 23, 2008

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventors: Lee S. McCarthy, Umesh K. Mishra, Felix Recht, Tomas Apostol Palacios Gutierrez

METHOD TO FABRICATE III-N FIELD EFFECT TRANSISTORS USING ION IMPLANTATION WITH REDUCED DOPANT ACTIVATION AND DAMAGE RECOVERY TEMPERATURE