Abstract: A system may include a user data store containing items, each item containing an item identifier. The items might comprise, for example, files and file names arranged in a hierarchy. A context enhancement platform may then receive a user request from a user device. The context enhancement platform constructs and outputs a first Large Language Model (“LLM”) query, from a context selector to a first LLM. The first LLM query may be, for example, designed to select relevant items from the user data store. Based on a response to the first LLM query, the context enhancement platform constructs and outputs a second LLM query, from a prompt generator to a second LLM. The second LLM query may, according to some embodiments, include information about the user request and information about the relevant items.

Abstract: A method for producing a semiconductor device includes forming transistor cells in a semiconductor body, each cell including a drift region separated from a source region by a body region, a gate electrode dielectrically insulated from the body region, and a compensation region of a doping type complementary to the doping type of the drift region and extending from a respective body region into the drift region in a vertical direction. Forming the drift and compensation regions includes performing a first implantation step, thereby implanting first and second type dopant atoms into the semiconductor body, wherein an implantation dose of at least one of the first type dopant atoms and the second type dopant atoms for each of at least two sections of the semiconductor body differs from the implantation dose of the corresponding type of dopant atoms of at least one other section of the at least two sections.

Abstract: A method for producing a semiconductor device includes forming transistor cells in a semiconductor body, each cell including a drift region separated from a source region by a body region, a gate electrode dielectrically insulated from the body region, and a compensation region of a doping type complementary to the doping type of the drift region and extending from a respective body region into the drift region in a vertical direction. Forming the drift and compensation regions includes performing a first implantation step, thereby implanting first and second type dopant atoms into the semiconductor body, wherein an implantation dose of at least one of the first type dopant atoms and the second type dopant atoms for each of at least two sections of the semiconductor body differs from the implantation dose of the corresponding type of dopant atoms of at least one other section of the at least two sections.