Patents by Inventor Felix Traub
Felix Traub has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20240030101Abstract: A power module includes a power semiconductor module having a semiconductor chip arranged on a substrate. A lead frame is arranged in electrical contact with the semiconductor chip. Abase plate includes cooling structures and micro channels that are connected to an inlet port and an outlet port. A bond layer connects the power semiconductor module and the base plate. A mold compound is arranged on the power semiconductor module, the bond layer and the base plate. The bond layer is encapsulated completely by the power semiconductor module, the base plate and the mold compound and the lead frame is arranged at least partially within the mold compound.Type: ApplicationFiled: September 16, 2021Publication date: January 25, 2024Inventors: Niko Pavlicek, Didier Cottet, Thomas Gradinger, Chunlei Liu, Fabian Mohn, Giovanni Salvatore, Juergen Schuderer, Daniele Torresin, Felix Traub
-
Patent number: 11394178Abstract: A spark plug including a housing, an insulator, a center electrode, and a ground electrode situated at a combustion chamber-side end of the housing. The insulator has an insulator collar, an insulator base, and a transition area, which rests on a projection of the housing. A breathing space is configured at the combustion chamber-side end of the spark plug and is delimited by a section of the inner side of the housing and a section of the insulator base. The section of the insulator base has a rounding including a first leg length and a second leg length angled with respect to the first leg length, the first leg length extending between the intersecting point of the leg lengths with one another and a first end point of the rounding, and the second leg length extending between the intersecting point and a second end point of the rounding.Type: GrantFiled: December 10, 2019Date of Patent: July 19, 2022Assignee: Robert Bosch GmbHInventors: Felix Traub, Matthias Blankmeister, Sergej Subkow, Stephan Kaske
-
Publication number: 20220142015Abstract: An electric power converter device includes a first power semiconductor module and a frame for a closed cooler. The first power semiconductor module includes a first base plate having a first main side, a second main side opposite the first main side and a lateral side surface extending along a circumferential edge of the first base plate and connecting the first and the second main side. The frame is attached to the second main side of the first base plate. The first base plate has a first step on the second main side along the circumferential edge of the first base plate to form a first recess along the circumferential edge of the first base plate, in which first recess a first portion of the frame is received.Type: ApplicationFiled: February 25, 2020Publication date: May 5, 2022Applicants: AUDI AG, ABB POWER GRIDS SWITZERLAND AGInventors: Thomas GRADINGER, Jürgen SCHUDERER, Felix TRAUB, Chunlei LUI, Fabian MOHN, Daniele TORRESIN
-
Publication number: 20220085578Abstract: A spark plug including a housing, an insulator, a center electrode, and a ground electrode situated at a combustion chamber-side end of the housing. The insulator has an insulator collar, an insulator base, and a transition area, which rests on a projection of the housing. A breathing space is configured at the combustion chamber-side end of the spark plug and is delimited by a section of the inner side of the housing and a section of the insulator base. The section of the insulator base has a rounding including a first leg length and a second leg length angled with respect to the first leg length, the first leg length extending between the intersecting point of the leg lengths with one another and a first end point of the rounding, and the second leg length extending between the intersecting point and a second end point of the rounding.Type: ApplicationFiled: December 10, 2019Publication date: March 17, 2022Inventors: Felix Traub, Matthias Blankmeister, Sergej Subkow, Stephan Kaske
-
Patent number: 11018109Abstract: A power semiconductor module, including a housing; a power semiconductor chip within the housing; power terminals protruding from the housing and electrically interconnected with power electrodes of the semiconductor chip; and auxiliary terminals protruding from the housing and electrically interconnected with a gate electrode and one of the power electrodes; wherein three auxiliary terminals are arranged in a coaxial auxiliary terminal arrangement, which comprises an inner and two outer auxiliary terminals, which are arranged on opposing sides of the inner auxiliary terminal. The inner auxiliary terminal is electrically interconnected with the gate electrode or one of the power electrodes and the two outer auxiliary terminals are electrically connected with the other one of the gate electrode and the one of the power electrodes.Type: GrantFiled: June 17, 2019Date of Patent: May 25, 2021Assignees: ABB Power Grids Switzerland AG, Audi AGInventors: Didier Cottet, Felix Traub, Jürgen Schuderer, Andreas Apelsmeier, Johann Asam
-
Patent number: 11018117Abstract: A half-bridge module includes a substrate with a base metallization layer divided into a first DC conducting area, a second DC conducting area and an AC conducting area; at least one first power semiconductor switch chip bonded to the first DC conducting area and electrically interconnected with the AC conducting area; at least one second power semiconductor switch chip bonded to the AC conducting area and electrically interconnected with the second DC conducting area; and a coaxial terminal arrangement including at least one inner DC terminal. The at least first outer DC terminal and the at least one second outer DC terminal protrude from the module and are arranged in a row, such that the at least one inner DC terminal is coaxially arranged between the at least one first outer DC terminal and the at least one second outer DC terminal.Type: GrantFiled: November 4, 2019Date of Patent: May 25, 2021Assignee: ABB Power Grids Switzerland AGInventors: Fabian Mohn, Felix Traub, Jürgen Schuderer
-
Patent number: 10636732Abstract: A power module comprises at least one power semiconductor device with an electrical top contact area on a top side; and a multi-layer circuit board with multiple electrically conducting layers which are separated by multiple electrically isolating layers, the electrically isolating layers being laminated together with the electrically conducting layers; wherein the multi-layer circuit board has at least one cavity, which is opened to a top side of the multi-layer circuit board, which cavity reaches through at least two electrically conducting layers; wherein the power semiconductor device is attached with a bottom side to a bottom of the cavity; and wherein the power semiconductor device is electrically connected to a top side of the multi-layer circuit board with a conducting member bonded to the top contact area and bonded to the top side of the multi-layer circuit board.Type: GrantFiled: August 24, 2018Date of Patent: April 28, 2020Assignee: ABB Schweiz AGInventors: Fabian Mohn, Juergen Schuderer, Felix Traub
-
Publication number: 20200066686Abstract: A half-bridge module includes a substrate with a base metallization layer divided into a first DC conducting area, a second DC conducting area and an AC conducting area; at least one first power semiconductor switch chip bonded to the first DC conducting area and electrically interconnected with the AC conducting area; at least one second power semiconductor switch chip bonded to the AC conducting area and electrically interconnected with the second DC conducting area; and a coaxial terminal arrangement including at least one inner DC terminal, the at least first outer DC terminal and the at least one second outer DC terminal protrude from the module and are arranged in a row, such that the at least one inner DC terminal is coaxially arranged between the at least one first outer DC terminal and the at least one second outer DC terminal; wherein the at least one inner DC terminal is electrically connected to the second DC conducting area; the at least one first outer DC terminal and the at least one second outType: ApplicationFiled: November 4, 2019Publication date: February 27, 2020Inventors: Fabian Mohn, Felix Traub, Jürgen Schuderer
-
Publication number: 20190304946Abstract: A power semiconductor module, including a housing; a power semiconductor chip within the housing; power terminals protruding from the housing and electrically interconnected with power electrodes of the semiconductor chip; and auxiliary terminals protruding from the housing and electrically interconnected with a gate electrode and one of the power electrodes; wherein three auxiliary terminals are arranged in a coaxial auxiliary terminal arrangement, which comprises an inner and two outer auxiliary terminals, which are arranged on opposing sides of the inner auxiliary terminal. The inner auxiliary terminal is electrically interconnected with the gate electrode or one of the power electrodes and the two outer auxiliary terminals are electrically connected with the other one of the gate electrode and the one of the power electrodes.Type: ApplicationFiled: June 17, 2019Publication date: October 3, 2019Inventors: Didier Cottet, Felix Traub, Jürgen Schuderer, Andreas Apelsmeier, Johann Asam
-
Patent number: 10283454Abstract: The present invention relates to a power semiconductor module, comprising at least two power semiconductor devices, wherein the at least two power semiconductor devices comprise at least one power semiconductor transistor and at least one power semiconductor diode, wherein at least a first substrate is provided for carrying the power semiconductor transistor in a first plane, the first plane lying parallel to the plane of the substrate, wherein the power semiconductor diode is provided in a second plane, wherein the first plane is positioned between the substrate and the second plane in a direction normal to the first plane and wherein the first plane is spaced apart from the second plane in a direction normal to the first plane.Type: GrantFiled: November 21, 2017Date of Patent: May 7, 2019Assignee: ABB Schweiz AGInventors: Felix Traub, Fabian Mohn, Juergen Schuderer, Daniel Kearney, Slavo Kicin
-
Patent number: 10283436Abstract: A power electronics module comprises a first liquid cooler comprising a cooling channel for receiving a cooling liquid, wherein the first liquid cooler comprises a metal body providing a first terminal of the power electronics module; a second liquid cooler comprising a cooling channel for receiving a cooling liquid, wherein the second liquid cooler comprises a metal body providing a second terminal of the power electronics module; a plurality of semiconductor chips arranged between the first liquid cooler and the second liquid cooler, such that a first electrode of each semiconductor chip is bonded to the first liquid cooler, such that the first electrode is in electrical contact with the first liquid cooler, and an opposite second electrode of each semiconductor chip is in electrical contact with the second liquid cooler; and an insulating encapsulation, formed by molding the first liquid cooler, the second liquid cooler and the plurality of semiconductor chips into an insulation material, such that the firType: GrantFiled: October 13, 2017Date of Patent: May 7, 2019Assignee: ABB Schweiz AGInventors: Juergen Schuderer, Fabian Mohn, Didier Cottet, Felix Traub, Daniel Kearney
-
Publication number: 20180366400Abstract: A power module comprises at least one power semiconductor device with an electrical top contact area on a top side; and a multi-layer circuit board with multiple electrically conducting layers which are separated by multiple electrically isolating layers, the electrically isolating layers being laminated together with the electrically conducting layers; wherein the multi-layer circuit board has at least one cavity, which is opened to a top side of the multi-layer circuit board, which cavity reaches through at least two electrically conducting layers; wherein the power semiconductor device is attached with a bottom side to a bottom of the cavity; and wherein the power semiconductor device is electrically connected to a top side of the multi-layer circuit board with a conducting member bonded to the top contact area and bonded to the top side of the multi-layer circuit board.Type: ApplicationFiled: August 24, 2018Publication date: December 20, 2018Inventors: Fabian Mohn, Juergen Schuderer, Felix Traub
-
Publication number: 20180090441Abstract: The present invention relates to a power semiconductor module, comprising at least two power semiconductor devices, wherein the at least two power semiconductor devices comprise at least one power semiconductor transistor and at least one power semiconductor diode, wherein at least a first substrate is provided for carrying the power semiconductor transistor in a first plane, the first plane lying parallel to the plane of the substrate, wherein the power semiconductor diode is provided in a second plane, wherein the first plane is positioned between the substrate and the second plane in a direction normal to the first plane and wherein the first plane is spaced apart from the second plane in a direction normal to the first plane.Type: ApplicationFiled: November 21, 2017Publication date: March 29, 2018Inventors: Felix Traub, Fabian Mohn, Juergen Schuderer, Daniel Kearney, Slavo Kicin
-
Patent number: 9899283Abstract: A power module providing a half bridge comprises at least one substrate and an inner metallization area, two intermediate metallization areas and two outer metallization areas, each of which extends in a longitudinal direction of the at least one substrate; wherein the two intermediate metallization areas are arranged besides the inner metallization area with respect to a cross direction of the at least one substrate and each outer metallization area is arranged beside one of the two intermediate metallization areas with respect to the cross direction; wherein the power module comprises two inner sets of semiconductor switches, each inner set of semiconductor switches bonded to an intermediate metallization area and electrically connected to the inner metallization area, such that the inner sets of semiconductor switches form a first arm of the half bridge; wherein the power module comprises two outer sets of semiconductor switches, each outer set of semiconductor switches bonded to an outer metallization areType: GrantFiled: May 19, 2017Date of Patent: February 20, 2018Assignee: ABB Schweiz AGInventors: Didier Cottet, Felix Traub
-
Publication number: 20180040538Abstract: A power electronics module comprises a first liquid cooler comprising a cooling channel for receiving a cooling liquid, wherein the first liquid cooler comprises a metal body providing a first terminal of the power electronics module; a second liquid cooler comprising a cooling channel for receiving a cooling liquid, wherein the second liquid cooler comprises a metal body providing a second terminal of the power electronics module; a plurality of semiconductor chips arranged between the first liquid cooler and the second liquid cooler, such that a first electrode of each semiconductor chip is bonded to the first liquid cooler, such that the first electrode is in electrical contact with the first liquid cooler, and an opposite second electrode of each semiconductor chip is in electrical contact with the second liquid cooler; and an insulating encapsulation, formed by molding the first liquid cooler, the second liquid cooler and the plurality of semiconductor chips into an insulation material, such that the firType: ApplicationFiled: October 13, 2017Publication date: February 8, 2018Inventors: Juergen Schuderer, Fabian Mohn, Didier Cottet, Felix Traub, Daniel Kearney
-
Publication number: 20170338162Abstract: A power module providing a half bridge comprises at least one substrate and an inner metallization area, two intermediate metallization areas and two outer metallization areas, each of which extends in a longitudinal direction of the at least one substrate; wherein the two intermediate metallization areas are arranged besides the inner metallization area with respect to a cross direction of the at least one substrate and each outer metallization area is arranged beside one of the two intermediate metallization areas with respect to the cross direction; wherein the power module comprises two inner sets of semiconductor switches, each inner set of semiconductor switches bonded to an intermediate metallization area and electrically connected to the inner metallization area, such that the inner sets of semiconductor switches form a first arm of the half bridge; wherein the power module comprises two outer sets of semiconductor switches, each outer set of semiconductor switches bonded to an outer metallization areType: ApplicationFiled: May 19, 2017Publication date: November 23, 2017Inventors: Didier Cottet, Felix Traub