Abstract: Molecular-beam epitaxy (MBE) and more particularly suboxide MBE (S-MBE) and related structures are disclosed. S-MBE is disclosed that includes the use of a molecular beam of a suboxide that may be subsequently oxidized in a single step reaction to form an oxide film. By way of example, for a gallium oxide (Ga2O3) film, a molecular beam including a suboxide of gallium (Ga2O) may be provided. S-MBE may be performed in adsorption-controlled regimes where there is an excess of source material containing species in order to promote high growth rates for oxide films with improved crystallinity. Source mixtures for providing molecular beams of suboxides are disclosed that include mixtures of a particular element and an oxide of the element in ratios that promote such adsorption-controlled growth regimes. Related structures include oxide films having increased thickness with reduced crystal defects, including single polymorph films of gallium oxide.

Abstract: Molecular-beam epitaxy (MBE) and more particularly suboxide MBE (S-MBE) and related structures are disclosed. S-MBE is disclosed that includes the use of a molecular beam of a suboxide that may be subsequently oxidized in a single step reaction to form an oxide film. By way of example, for a gallium oxide (Ga2O3) film, a molecular beam including a suboxide of gallium (Ga2O) may be provided. S-MBE may be performed in adsorption-controlled regimes where there is an excess of source material containing species in order to promote high growth rates for oxide films with improved crystallinity. Source mixtures for providing molecular beams of suboxides are disclosed that include mixtures of a particular element and an oxide of the element in ratios that promote such adsorption-controlled growth regimes. Related structures include oxide films having increased thickness with reduced crystal defects, including single polymorph films of gallium oxide.