Abstract: A landing pad for use as a contact to a conductive spacer adjacent a structure in a semiconductor device comprises two islands, each of which is substantially rectangularly shaped and is spaced apart from one another and from the structure. Conductive spacers are adjacent to each island and overlapping each other and overlapping with the conductive spacer adjacent to the structure. The contact to the landing pad is on the conductive spacers adjacent to the islands and spaced apart from the structure.

Abstract: A nonvolatile memory cell has a charge trapping layer for the storage of charges thereon. The cell is a bidirectional cell in a substrate of a first conductivity. The cell has two spaced apart trenches. Within each trench, at the bottom thereof is a region of a second conductivity. A channel extends from one of the region at the bottom of one of the trenches along the side wall of that trench to the top planar surface of the substrate, and along the sidewall of the adjacent trench to the region at the bottom of the adjacent trench. The trapping layer is along the sidewall of each of the two trenches. A control gate is in each of the trenches capacitively coupled to the trapping layer along the sidewall and to the region at the bottom of the trench. Each of the trenches can stored a plurality of bits.

Abstract: A bi-directional read/program non-volatile memory cell and array is capable of achieving high density. Each memory cell has two spaced floating gates for storage of charges thereon. The cell has spaced apart source/drain regions with a channel therebetween, with the channel having three portions. One of the floating gate is over a first portion; another floating gate is over a second portion, and a gate electrode controls the conduction of the channel in the third portion between the first and second portions. A control gate is connected to each of the source/drain regions, and is also capacitively coupled to the floating gate. The cell programs by hot channel electron injection, and erases by Fowler-Nordheim tunneling of electrons from the floating gate to the gate electrode. Bi-directional read permits the cell to be programmed to store bits, with one bit in each floating gate.

Abstract: A landing pad for use as a contact to a conductive spacer adjacent a structure in a semiconductor device comprises two islands, each of which is substantially rectangularly shaped and is spaced apart from one another and from the structure. Conductive spacers are adjacent to each island and overlapping each other and overlapping with the conductive spacer adjacent to the structure. The contact to the landing pad is on the conductive spacers adjacent to the islands and spaced apart from the structure.