Abstract: Apparatus, systems, and methods for conducting a hardmask (e.g., carbon containing hardmask) removal process on a workpiece are provided. In one example implementation, a process can include admitting a process gas into a plasma chamber, generating a plasma in the plasma chamber from the process gas using an inductively coupled plasma source, and exposing the carbon containing hardmask to the plasma to remove at least a portion of the carbon containing hardmask. The process gas can include a sulfur containing gas. The process gas does not include a halogen containing gas. The inductively coupled plasma source can be separated from the plasma chamber by a grounded electrostatic shield to reduce capacitive coupling between the inductively coupled plasma source and the plasma.

Abstract: Apparatus, systems, and methods for conducting a hardmask (e.g., carbon containing hardmask) removal process on a workpiece are provided. In one example implementation, a process can include admitting a process gas into a plasma chamber, generating a plasma in the plasma chamber from the process gas using an inductively coupled plasma source, and exposing the carbon containing hardmask to the plasma to remove at least a portion of the carbon containing hardmask. The process gas can include a sulfur containing gas. The process gas does not include a halogen containing gas. The inductively coupled plasma source can be separated from the plasma chamber by a grounded electrostatic shield to reduce capacitive coupling between the inductively coupled plasma source and the plasma.

Abstract: A memory extensible chip (200) is provided. The chip (200) includes a substrate (240), and a processor (230), a first memory module set (210), and a second memory module set (220) that are integrated on the substrate (240). The processor (230) communicates with at least one memory module in the first memory module set (210) using a first communications interface (250), and the processor (230) communicates with at least one memory module in the second memory module set (220) using a second communications interface (260). A memory module in the first memory module set (210) communicates with a memory module in the second memory module set (220) using a substrate network, where the substrate network is a communications network located inside the substrate (240). In this way, the processor (230) can access a memory module in the first memory module set (210) by using the second memory module set (220).

Abstract: A memory extensible chip (200) is provided. The chip (200) includes a substrate (240), and a processor (230), a first memory module set (210), and a second memory module set (220) that are integrated on the substrate (240). The processor (230) communicates with at least one memory module in the first memory module set (210) using a first communications interface (250), and the processor (230) communicates with at least one memory module in the second memory module set (220) using a second communications interface (260). A memory module in the first memory module set (210) communicates with a memory module in the second memory module set (220) using a substrate network, where the substrate network is a communications network located inside the substrate (240). In this way, the processor (230) can access a memory module in the first memory module set (210) by using the second memory module set (220).

Abstract: A method and an apparatus for processing a data packet based on parallel protocol stack instances, where lower-layer protocol processing is performed, using a first protocol stack instance. An associated second protocol stack instance is determined using a target socket after the target socket that is needed to perform upper-layer protocol processing on the data packet is determined, and the upper-layer protocol processing is performed, using the target socket and the second protocol stack instance. The second protocol stack instance that performs the upper-layer protocol processing is determined using the target socket, and hence, a technical problem that protocol processing cannot be performed on a data packet because a protocol stack instance specified by an application (APP) conflicts with a protocol stack instance specified by a network adapter is resolved.

Abstract: A method and an apparatus for processing a data packet based on parallel protocol stack instances, where lower-layer protocol processing is performed, using a first protocol stack instance. An associated second protocol stack instance is determined using a target socket after the target socket that is needed to perform upper-layer protocol processing on the data packet is determined, and the upper-layer protocol processing is performed, using the target socket and the second protocol stack instance. The second protocol stack instance that performs the upper-layer protocol processing is determined using the target socket, and hence, a technical problem that protocol processing cannot be performed on a data packet because a protocol stack instance specified by an application (APP) conflicts with a protocol stack instance specified by a network adapter is resolved.

Abstract: A P2P based method for playing media is provided. The method includes logging in a network; selecting a live broadcasting service or a video-on-demand service, and receiving a judgment result on whether to buffer a data flow corresponding to the live broadcasting service or the video-on-demand service; obtaining the corresponding data flow according to a selection result, and buffering the data flow when the judgment result is yes; and providing the buffered corresponding data flow for a video-on-demand node or a live broadcasting node as a data source of the live broadcasting service or the video-on-demand service.

Abstract: A P2P based method for playing media is provided. The method includes logging in a network; selecting a live broadcasting service or a video-on-demand service, and receiving a judgment result on whether to buffer a data flow corresponding to the live broadcasting service or the video-on-demand service; obtaining the corresponding data flow according to a selection result, and buffering the data flow when the judgment result is yes; and providing the buffered corresponding data flow for a video-on-demand node or a live broadcasting node as a data source of the live broadcasting service or the video-on-demand service.

Abstract: As one of many embodiments of the present invention, a seamless polishing apparatus for utilization in chemical mechanical polishing is provided. The seamless polishing apparatus includes a polishing pad where the polishing pad is shaped like a belt and has no seams. The seamless polishing apparatus also includes a base belt where the base belt includes a reinforcement layer where the reinforcement layer is a fibrous-type material. In addition, the polishing pad is located over the base belt.

Abstract: As one of many embodiments of the present invention, a seamless polishing apparatus for utilization in chemical mechanical polishing is provided. The seamless polishing apparatus includes a polishing pad where the polishing pad is shaped like a belt and has no seams. The seamless polishing apparatus also includes a base belt where the base belt includes a reinforcement layer where the reinforcement layer is a fibrous-type material. In addition, the polishing pad is located over the base belt.

Abstract: A seamless polishing apparatus for utilization in chemical mechanical polishing is disclosed. The seamless polishing apparatus includes a base belt that has a reinforcement layer and a cushioning layer. The seamless polishing apparatus also includes a polishing pad that is attached to the base belt as a result of a direct casting of a polymeric precursor on a top surface of the cushioning layer. In addition, the cushioning layer is an intermediary layer between the polishing belt pad and the base belt.

Abstract: As one of many embodiments of the present invention, a seamless polishing apparatus for utilization in chemical mechanical polishing is provided. The seamless polishing apparatus includes a polishing pad where the polishing pad is shaped like a belt and has no seams. The seamless polishing apparatus also includes a base belt where the base belt includes a reinforcement layer and a cushioning layer. In addition, the cushioning layer is an intermediary layer between the polishing belt pad and the base belt.

Abstract: A multi-step CMP system is used to polish a wafer to form metal interconnects in a dielectric layer upon which barrier and metal layers have been formed. A first polish removes an upper portion of the metal layer using a first slurry and a first set of polishing parameters, leaving residual metal within the dielectric layer to serve as the metal interconnects. A second polish of the wafer on the same platen and polishing pad removes portions of the barrier layer using a second slurry under a second set of polishing parameters. The second polish clears the barrier layer from the upper surface of the dielectric layer, thereby forming the metal interconnect. To reduce dishing and dielectric erosion, the second slurry is selected so that the barrier layer is removed at a faster rate than the residual metal within the dielectric layer. A cleaning step may be optionally performed between the first and second polishes.