Abstract: A chat message processing method is provided for a server. The method includes receiving a chat message sent by a sending terminal, where the chat message carries information about a receiving terminal, and forwarding the chat message to the receiving terminal. The method also includes, when determining that the chat message comprises an image, generating at least one group of descriptive texts used for describing the image; and sending the at least one group of descriptive texts of the image to the receiving terminal to cause the receiving terminal to, when displaying the image, simultaneously display the at least one group of descriptive texts as at least one candidate entering-item associated with the image.

Abstract: The present disclosure relates to a satellite signal feeding module and circuit board structure. The circuit board includes a dielectric substrate, a plurality of grounding sheets, a plurality of top feed sheets, a plurality of bottom feed sheets, and a conductive layer. The dielectric substrate includes a main segment having an opening, a rib segment extending across a full width of the opening, and a plurality of extending segments connected to the main segment. The grounding sheets cover the rib segment and a majority portion of the main segment. The top feeding sheets and the bottom sheets cover the extending segments. The conductive layer is disposed in first holes disposed in the main segment and the rib segment for electrically coupling the grounding sheets. The conductive layer is further disposed in second holes in the extending segments for electrically coupling the top and bottom feeding sheets.

Abstract: A dialog generation method, apparatus, and device, and a storage medium are provided. The method includes converting each term in a Kth round of a query sentence into a first word vector, and calculating a positive latent vector and a negative latent vector of each term according to the first word vector, where K denotes a positive integer greater than or equal to 2. A content topic of the Kth round of the query sentence is obtained, and converted into a second word vector. An initial latent vector output for the Kth round of the query sentence is determined according to the second word vector, the positive latent vector of a last term in the Kth round of the query sentence, a latent vector of a last term in a (K-1)th round of a reply sentence output for a (K-1)th round of the query sentence, and an initial latent vector of the (K-1)th round of the reply sentence output for the (K-1)th round of the query sentence.

Abstract: An optical device is provided. The optical device includes a substrate, a plurality of color filters and a plurality of spacers. The substrate has a central region and a peripheral region. The plurality of color filters include red color filters, green color filters and blue color filters and are formed on the substrate. The plurality of spacers are formed between the color filters. The refractive index of the spacers reduces gradually from that of the spacer located at the central region to that of the spacer located at the peripheral region of the substrate.

Abstract: A semantic analysis method includes: inputting a word vector of each word in each sample sentence in a dialog flow into an encoder model, to obtain a sentence vector representing semantics of the sample sentence; inputting the sentence vector into a first decoder model corresponding to each context sentence of the sample sentence and a second decoder model corresponding to each word of the sample sentence, to obtain a first identifier corresponding to the context sentence and a second identifier corresponding to the word; obtaining a probability of the first identifier and a probability of the second identifier, and determining a value of a target function; performing parameter training on the encoder model according to the value of the target function; and inputting a word vector of each word in a test sentence into the trained encoder model, to obtain a sentence vector representing semantics of the test sentence.

Abstract: This application discloses a session information processing method and device, and a storage medium. The method includes: extracting a to-be-analyzed sentence and preceding sentences of the to-be-analyzed sentence from a session; performing word segmentation on the to-be-analyzed sentence and the preceding sentences, to obtain a first feature set including a plurality of first features; extracting a second feature set including one or more second features from a first word set corresponding to the to-be-analyzed sentence and a second word set corresponding to the preceding sentences, one second feature including a phrase or sentence including a first word and a second word, the first word being one or more words in the first word set, and the second word being one or more words in the second word set; and determining, according to the first feature set and the second feature set, a sentence category to which the to-be-analyzed sentence belongs.

Abstract: The present application discloses an information processing method performed at a computing device. The method includes: collecting first information; executing an intent identification task on the first information to obtain an intent identification processing result; executing a slot identification task on the first information according to the intent identification processing result to obtain a slot identification processing result; and outputting a target result according to the slot identification processing result.

Abstract: A memory device is described. Generally, the device includes a string of memory transistors, a source select transistor coupled to a first end of the string of memory transistor and a drain select transistor coupled to a second end of the string of memory transistor. Each memory transistor includes a gate electrode formed adjacent to a charge trapping layer and there is neither a source nor a drain junction between adjacent pairs of memory transistors or between the memory transistors and source select transistor or drain select transistor. In one embodiment, the memory transistors are spaced apart from adjacent memory transistors and the source select transistor and drain select transistor, such that channels are formed therebetween based on a gate fringing effect associated with the memory transistors. Other embodiments are also described.

Abstract: A chat message processing method is provided for a server. The method includes receiving a chat message sent by a sending terminal, where the chat message carries information about a receiving terminal, and forwarding the chat message to the receiving terminal. The method also includes, when determining that the chat message comprises an image, generating at least one group of descriptive texts used for describing the image; and sending the at least one group of descriptive texts of the image to the receiving terminal to cause the receiving terminal to, when displaying the image, simultaneously display the at least one group of descriptive texts as at least one candidate entering-item associated with the image.

Abstract: A display controller disposed in a display device that includes a flash memory and an integrated circuit is provided. The flash memory stores display device information of the display device. The integrated circuit includes a first and a second power conversion circuit and an accessing circuit. The first power conversion circuit converts an external power received from an external power adapter to a power in a first power domain. The second power conversion circuit converts a host power received from a host to the power of a second power domain and outputs the power to a flash memory such that the flash memory operates accordingly. The accessing circuit operates according to the power of the second power domain to access and transmit the display device information from the flash memory to the host when the first power conversion circuit is not in operation.

Abstract: A memory device is described. Generally, the device includes a string of memory transistors, a source select transistor coupled to a first end of the string of memory transistor and a drain select transistor coupled to a second end of the string of memory transistor. Each memory transistor includes a gate electrode formed adjacent to a charge trapping layer and there is neither a source nor a drain junction between adjacent pairs of memory transistors or between the memory transistors and source select transistor or drain select transistor. In one embodiment, the memory transistors are spaced apart from adjacent memory transistors and the source select transistor and drain select transistor, such that channels are formed therebetween based on a gate fringing effect associated with the memory transistors. Other embodiments are also described.

Abstract: A method for determining a candidate input is provided. Text that precedes and/or follows a current text input location in an input interface is acquired. A candidate sentence is acquired based on the text which is contained in a current sentence that corresponds to the current text input location. A preset number of possible conjunctions for the candidate sentence are determined based on occurrence probabilities of the possible conjunctions that are determined for the candidate sentence. The preset number of possible conjunctions are connected to the candidate sentence to obtain predicted candidate sentences. Occurrence probabilities of the predicted candidate sentences are calculated according to the text that precedes and/or follows the current text input location. Further, a preset number of the predicted candidate sentences are provided based on the calculated occurrence probabilities of the predicted candidate sentences as candidate inputs.

Abstract: A dialog generation method, apparatus, and device, and a storage medium are provided. The method includes converting each term in a Kth round of a query sentence into a first word vector, and calculating a positive latent vector and a negative latent vector of each term according to the first word vector, where K denotes a positive integer greater than or equal to 2. A content topic of the Kth round of the query sentence is obtained, and converted into a second word vector. An initial latent vector output for the Kth round of the query sentence is determined according to the second word vector, the positive latent vector of a last term in the Kth round of the query sentence, a latent vector of a last term in a (K?1)th round of a reply sentence output for a (K?1)th round of the query sentence, and an initial latent vector of the (K?1)th round of the reply sentence output for the (K?1)th round of the query sentence.

Abstract: A display controller disposed in a display device that includes a flash memory and an integrated circuit is provided. The flash memory stores display device information of the display device. The integrated circuit includes a first and a second power conversion circuit and an accessing circuit. The first power conversion circuit converts an external power received from an external power adapter to a power in a first power domain. The second power conversion circuit converts a host power received from a host to the power of a second power domain and outputs the power to a flash memory such that the flash memory operates accordingly. The accessing circuit operates according to the power of the second power domain to access and transmit the display device information from the flash memory to the host when the first power conversion circuit is not in operation.

Abstract: A control device includes: a dummy memory cell group; a transistor having a first terminal, a grounded second terminal and a control terminal; an adjustor providing a resistance between the dummy memory cell group and the first terminal of the transistor; an inverter generating, based on a voltage at the first terminal of the transistor, a sense start signal that is associated with switching of a sense amplifier circuit of a semiconductor memory device from a disabled state to an enabled state; and a controller generating, based on the sense start signal, a control signal for controlling the transistor such that switching of the transistor from conduction into non-conduction is associated with the sense start signal.

Abstract: A control device includes: a dummy memory cell group; a transistor having a first terminal, a grounded second terminal and a control terminal; an adjustor providing a resistance between the dummy memory cell group and the first terminal of the transistor; an inverter generating, based on a voltage at the first terminal of the transistor, a sense start signal that is associated with switching of a sense amplifier circuit of a semiconductor memory device from a disabled state to an enabled state; and a controller generating, based on the sense start signal, a control signal for controlling the transistor such that switching of the transistor from conduction into non-conduction is associated with the sense start signal.

Abstract: A split gate NAND flash memory structure is formed on a semiconductor substrate of a first conductivity type. The NAND structure comprises a first region of a second conductivity type in the substrate with a second region of the second conductivity type in the substrate, spaced apart from the first region. A continuous first channel region is defined between the first region and the second region. A plurality of floating gates are spaced apart from one another with each positioned over a separate portion of the channel region. A plurality of control gates are provided with each associated with and adjacent to a floating gate. Each control gate has two portions: a first portion over a portion of the channel region and a second portion over the associated floating gate and capacitively coupled thereto.

Abstract: A sulfur doped oxide solid electrolyte powder is provided. The amount of sulfur is 1 wt % to 5 wt % based on the weight of the sulfur doped oxide solid electrolyte powder. A solid state battery is also provided. The solid state battery includes a positive electrode layer, a negative electrode layer, and an electrolyte layer. The electrolyte layer includes the above sulfur doped oxide solid electrolyte powder.

Abstract: A lithium positive electrode material is provided, which includes a host material and a doping material doped into the host material, wherein the doping material has a chemical formula of LiyLazZrwAluO12+(u*3/2), wherein 5?y?8, 2?z?5, 1?w?3, and 0<u<1. The lithium positive electrode material may collocate with carbon material and binder to form a positive electrode for a lithium battery.

Abstract: A memory device is described. Generally, the device includes a string of memory transistors, a source select transistor coupled to a first end of the string of memory transistor and a drain select transistor coupled to a second end of the string of memory transistor. Each memory transistor includes a gate electrode formed adjacent to a charge trapping layer and there is neither a source nor a drain junction between adjacent pairs of memory transistors or between the memory transistors and source select transistor or drain select transistor. In one embodiment, the memory transistors are spaced apart from adjacent memory transistors and the source select transistor and drain select transistor, such that channels are formed therebetween based on a gate fringing effect associated with the memory transistors. Other embodiments are also described.