Patents by Inventor Feng Chia Hsu

Feng Chia Hsu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190172958
    Abstract: An infrared sensor including a substrate, an infrared absorption layer and a concave is provided. The infrared absorption layer is formed on a substrate and has a sensing surface. The concave extends toward the substrate from a sensing surface of the infrared absorption layer.
    Type: Application
    Filed: December 28, 2017
    Publication date: June 6, 2019
    Inventors: Feng-Chia Hsu, Shing-Cheng Chang, Peng-Jen Chen, Chung-Yuan Su
  • Patent number: 10203252
    Abstract: A MEMS apparatus having measuring range selector including a sensor and an IC chip is provided. The sensor includes a sensing device. The IC chip includes a voltage range selector, an analog front end, a control device and an A/D converter. The sensing device is configured to detect the physical quantity and generate a sensing voltage. The voltage range selector is configured to select a sub-voltage range having a first upper-bound and a first lower-bound. The analog front end is configured to receive the sensing voltage and output a first voltage. The A/D converter has a full scale voltage range having a second lower-bound and a second upper-bound. A ratio of the full scale voltage range to the sub-voltage range is defined as a gain factor. A difference obtained by subtracting the first lower-bound from the first voltage is defined as a shift factor. The control device is configured to adjust the first voltage to the second voltage according to the gain factor and the shift factor.
    Type: Grant
    Filed: December 29, 2016
    Date of Patent: February 12, 2019
    Assignee: Industrial Technology Research Institute
    Inventors: Yu-Wen Hsu, Feng-Chia Hsu, Chao-Ta Huang, Shih-Ting Lin
  • Publication number: 20180188115
    Abstract: A MEMS apparatus having measuring range selector including a sensor and an IC chip is provided. The sensor includes a sensing device. The IC chip includes a voltage range selector, an analog front end, a control device and an A/D converter. The sensing device is configured to detect the physical quantity and generate a sensing voltage. The voltage range selector is configured to select a sub-voltage range having a first upper-bound and a first lower-bound. The analog front end is configured to receive the sensing voltage and output a first voltage. The A/D converter has a full scale voltage range having a second lower-bound and a second upper-bound. A ratio of the full scale voltage range to the sub-voltage range is defined as a gain factor. A difference obtained by subtracting the first lower-bound from the first voltage is defined as a shift factor. The control device is configured to adjust the first voltage to the second voltage according to the gain factor and the shift factor.
    Type: Application
    Filed: December 29, 2016
    Publication date: July 5, 2018
    Applicant: Industrial Technology Research Institute
    Inventors: Yu-Wen Hsu, Feng-Chia Hsu, Chao-Ta Huang, Shih-Ting Lin
  • Patent number: 9966394
    Abstract: A light sensing device includes a substrate, a semiconductor device layer, a metal and insulation material stacked structure, and a light absorption layer. The substrate has a recessed portion. The semiconductor device layer is located on the substrate. The metal and insulation material stacked structure is located on the semiconductor device layer and includes a first interconnect structure, a second interconnect structure surrounding the first interconnect structure, and a device conductive line. The light absorption layer is located on the metal and insulation material stacked structure. The first interconnect structure is located between the light absorption layer and the semiconductor device layer, such that the light absorption layer and the semiconductor device layer located at different levels can be connected to each other and exchange heat.
    Type: Grant
    Filed: March 30, 2016
    Date of Patent: May 8, 2018
    Assignee: Industrial Technology Research Institute
    Inventors: Feng-Chia Hsu, Yu-Sheng Lin, Chun-Yin Tsai, Sheng-Ren Chiu
  • Publication number: 20170186786
    Abstract: A light sensing device includes a substrate, a semiconductor device layer, a metal and insulation material stacked structure, and a light absorption layer. The substrate has a recessed portion. The semiconductor device layer is located on the substrate. The metal and insulation material stacked structure is located on the semiconductor device layer and includes a first interconnect structure, a second interconnect structure surrounding the first interconnect structure, and a device conductive line. The light absorption layer is located on the metal and insulation material stacked structure. The first interconnect structure is located between the light absorption layer and the semiconductor device layer, such that the light absorption layer and the semiconductor device layer located at different levels can be connected to each other and exchange heat.
    Type: Application
    Filed: March 30, 2016
    Publication date: June 29, 2017
    Inventors: Feng-Chia Hsu, Yu-Sheng Lin, Chun-Yin Tsai, Sheng-Ren Chiu
  • Publication number: 20150137660
    Abstract: A surface elastic wave generator may include a substrate. A first conductivity type region is formed in the substrate. A second conductivity type doped region includes at least one doping pattern doped on surface of the first conductivity type region. Through applying reverse bias to junctions between the first conductivity type region and the second conductivity type doped region, a depletion capacitance region is formed. Also, through inputting signal to the first conductivity type region or the second conductivity type doped region, the surface elastic wave is generated on the substrate. In addition, a surface elastic wave transceiver and surface elastic wave generation method are also provided.
    Type: Application
    Filed: May 30, 2014
    Publication date: May 21, 2015
    Applicant: Industrial Technology Research Institute
    Inventors: Feng-Chia Hsu, Tsun-Che Huang, Jyun-Cheng Huang
  • Patent number: 9013089
    Abstract: The disclosure provides a structure for a microelectromechanical system (MEMS)-based resonator device. The structure for the MEMS-based resonator device includes at least one resonator unit. The at least one resonator unit comprises a substrate having a trench therein. A pair of first electrodes is disposed on a pair of sidewalls of the trench. A piezoelectric material fills the trench, covering the pair of first electrodes. A second electrode is embedded in the piezoelectric material, separated from the pair of first electrodes by the piezoelectric material. The second electrode disposed in the trench is parallel to the pair of first electrodes.
    Type: Grant
    Filed: June 5, 2013
    Date of Patent: April 21, 2015
    Assignee: Industrial Technology Research Institute
    Inventors: Chun-Yin Tsai, Feng-Chia Hsu, Tsun-Che Huang, Chin-Hung Wang
  • Patent number: 8803403
    Abstract: An inter-digital bulk acoustic resonator including a resonating structure, one or more input electrodes, one or more output electrodes, a substrate, and a supporting structure disposed on the substrate is provided. The resonating structure includes one or more resonating beams and a coupling beam. The resonating beams are connected at opposite two sides of the coupling beam respectively. The input electrodes and the output electrodes are arranged among the resonating beams in interlace. The input electrodes, the output electrodes, and the resonating beams are parallel to each other. Two ends of the coupling beam are connected to the supporting structure, such that the resonating structure is supported on the substrate.
    Type: Grant
    Filed: March 6, 2012
    Date of Patent: August 12, 2014
    Assignee: Industrial Technology Research Institute
    Inventors: Tsun-Che Huang, Feng-Chia Hsu, Pin Chang, Chin-Hung Wang
  • Publication number: 20140184029
    Abstract: The disclosure provides a structure for a microelectromechanical system (MEMS)-based resonator device. The structure for the MEMS-based resonator device includes at least one resonator unit. The at least one resonator unit comprises a substrate having a trench therein. A pair of first electrodes is disposed on a pair of sidewalls of the trench. A piezoelectric material fills the trench, covering the pair of first electrodes. A second electrode is embedded in the piezoelectric material, separated from the pair of first electrodes by the piezoelectric material. The second electrode disposed in the trench is parallel to the pair of first electrodes.
    Type: Application
    Filed: June 5, 2013
    Publication date: July 3, 2014
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Chun-Yin Tsai, Feng-Chia Hsu, Tsun-Che Huang, Chin-Hung Wang
  • Patent number: 8754573
    Abstract: An ultrasonic transducer detector having a high operating frequency is provided. The ultrasonic transducer detector comprises a substrate and an ultrasonic transducer array. The substrate has a plurality of openings, and the ultrasonic transducer array is disposed on the substrate. The ultrasonic transducer array has a plurality of resonance units, and the thickness of each resonance unit is equivalent to ½ wavelength of the operating frequency of the ultrasonic transducer. Each resonance unit comprises an oscillating element and a piezoelectric element. The oscillating element has a first surface adjacent to the substrate, and the piezoelectric element is disposed on the first surface and located in the corresponding opening.
    Type: Grant
    Filed: March 2, 2011
    Date of Patent: June 17, 2014
    Assignee: Industrial Technology Research Institute
    Inventors: Pin Chang, Feng-Chia Hsu, Di-Bao Wang, Chin-Hung Wang
  • Patent number: 8471651
    Abstract: A microelectromechanical filter is provided. The microelectromechanical filter includes an input electrode, an output electrode, one or several piezoelectric resonators, one or several high quality factor resonators, and one or several coupling beams. The input electrode and the output electrode are disposed on the piezoelectric resonators. The high quality factor resonator is silicon or of piezoelectric materials, and there is no metal electrode on top of the resonator. The coupling beam is connected between the piezoelectric resonator and the high quality factor resonator. The coupling beam transmits an acoustic wave among the resonators, and controls a bandwidth of filter. The microelectromechanical filter with low impedance and high quality factor fits the demand for next-generation communication systems.
    Type: Grant
    Filed: November 5, 2010
    Date of Patent: June 25, 2013
    Assignee: Industrial Technology Research Institutute
    Inventors: Tsun-Che Huang, Feng-Chia Hsu, Pin Chang, Chin-Hung Wang
  • Publication number: 20130147568
    Abstract: An inter-digital bulk acoustic resonator including a resonating structure, one or more input electrodes, one or more output electrodes, a substrate, and a supporting structure disposed on the substrate is provided. The resonating structure includes one or more resonating beams and a coupling beam. The resonating beams are connected at opposite two sides of the coupling beam respectively. The input electrodes and the output electrodes are arranged among the resonating beams in interlace. The input electrodes, the output electrodes, and the resonating beams are parallel to each other. Two ends of the coupling beam are connected to the supporting structure, such that the resonating structure is supported on the substrate.
    Type: Application
    Filed: March 6, 2012
    Publication date: June 13, 2013
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Tsun-Che Huang, Feng-Chia Hsu, Pin Chang, Chin-Hung Wang
  • Patent number: 8390399
    Abstract: A resonator includes a resonating body and at least one periodic structure having one end connected to the resonating body. The periodic structure includes at least two basic structure units with duplicated configuration. The periodic structure blocks wave propagation caused by the vibration of the resonating body. The resonating body has a resonance frequency f0. The periodic structure has a band gap characteristic or a deaf band characteristic within a particular frequency range, and the resonance frequency f0 falls within the particular frequency range of the periodic structure.
    Type: Grant
    Filed: May 17, 2010
    Date of Patent: March 5, 2013
    Assignee: Industrial Technology Research Institute
    Inventors: Tsun-Che Huang, Pin Chang, Feng-Chia Hsu, Chin-Hung Wang
  • Publication number: 20120146458
    Abstract: An ultrasonic transducer detector having a high operating frequency is provided. The ultrasonic transducer detector comprises a substrate and an ultrasonic transducer array. The substrate has a plurality of openings, and the ultrasonic transducer array is disposed on the substrate. The ultrasonic transducer array has a plurality of resonance units, and the thickness of each resonance unit is equivalent to ½ wavelength of the operating frequency of the ultrasonic transducer. Each resonance unit comprises an oscillating element and a piezoelectric element. The oscillating element has a first surface adjacent to the substrate, and the piezoelectric element is disposed on the first surface and located in the corresponding opening.
    Type: Application
    Filed: March 2, 2011
    Publication date: June 14, 2012
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Pin Chang, Feng-Chia Hsu, Di-Bao Wang, Chin-Hung Wang
  • Publication number: 20120062340
    Abstract: A microelectromechanical filter is provided. The microelectromechanical filter includes an input electrode, an output electrode, one or several piezoelectric resonators, one or several high quality factor resonators, and one or several coupling beams. The input electrode and the output electrode are disposed on the piezoelectric resonators. The high quality factor resonator is silicon or of piezoelectric materials, and there is no metal electrode on top of the resonator. The coupling beam is connected between the piezoelectric resonator and the high quality factor resonator. The coupling beam transmits an acoustic wave among the resonators, and controls a bandwidth of filter. The microelectromechanical filter with low impedance and high quality factor fits the demand for next-generation communication systems.
    Type: Application
    Filed: November 5, 2010
    Publication date: March 15, 2012
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Tsun-Che Huang, Feng-Chia Hsu, Pin Chang, Chin-Hung Wang
  • Publication number: 20110128094
    Abstract: A resonator includes a resonating body and at least one periodic structure having one end connected to the resonating body. The periodic structure includes at least two basic structure units with duplicated configuration. The periodic structure blocks wave propagation caused by the vibration of the resonating body. The resonating body has a resonance frequency f0. The periodic structure has a band gap characteristic or a deaf band characteristic within a particular frequency range, and the resonance frequency f0 falls within the particular frequency range of the periodic structure.
    Type: Application
    Filed: May 17, 2010
    Publication date: June 2, 2011
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Tsun-Che Huang, Pin Chang, Feng-Chia Hsu, Chin-Hung Wang
  • Patent number: 6658764
    Abstract: An apparatus and a method for preventing solvent droplets from falling on wafers during a solvent drying process of a semiconductor wafer. The apparatus is constructed by a body having a cavity therein for holding a wafer, means for introducing a solvent vapor in the cavity, a plurality of condenser coils on an inside wall of the cavity, and a plurality of condensing plates attached to the plurality of condenser coils on a surface facing the wafer for condensing solvent vapor and flowing condensed solvent into a reservoir thus preventing solvent droplets from falling on the wafer surface.
    Type: Grant
    Filed: May 10, 2002
    Date of Patent: December 9, 2003
    Assignee: Taiwan Semiconductor Manufacturing Co. Ltd.
    Inventor: Feng Chia Hsu
  • Publication number: 20030208922
    Abstract: An apparatus and a method for preventing solvent droplets from falling on wafers during a solvent drying process of a semiconductor wafer. The apparatus is constructed by a body having a cavity therein for holding a wafer, means for introducing a solvent vapor in the cavity, a plurality of condenser coils on an inside wall of the cavity, and a plurality of condensing plates attached to the plurality of condenser coils on a surface facing the wafer for condensing solvent vapor and flowing condensed solvent into a reservoir thus preventing solvent droplets from falling on the wafer surface.
    Type: Application
    Filed: May 10, 2002
    Publication date: November 13, 2003
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventor: Feng Chia Hsu