Abstract: The object of the present invention is to reveal how to control the operation of a capsule endoscope that has a memory storage device. The capsule endoscope is swallowed through the mouth to start the photographic inspection. During the process of operating the capsule endoscope, the built-in wireless receiving module is used to receive instructions and further to adjust the movement of capsule endoscope in order to achieve the inspection tasks; on completion of the photographic inspection, the capsule shell is cut open and connected to the host computer, and the image and data stored in the storage module are accessed through the host computer.

Abstract: Disclosed is a method for pre-retaining CB opening in a DRAM manufacture process, wherein a CB opening is filed with a photo-resist layer and an LPD oxidation layer that is filled at room temperature to avoid damaging caused by conventional etching techniques. The LPD oxidation layer and the photo-resist are replaced easily by a polysilicon layer and a BPSG layer.

Abstract: Disclosed is a method for pre-retaining CB opening in a DRAM manufacture process, wherein a CB opening is filed with a photo-resist layer and an LPD oxidation layer that is filled at room temperature to avoid damaging caused by conventional etching techniques. The LPD oxidation layer and the photo-resist are replaced easily by a polysilicon layer and a BPSG layer.

Abstract: A method is disclosed for manufacturing bit line contact structures of semiconductor memories. The manufacturing method comprises the steps of providing a semiconductor substrate, forming a plurality of gates on the surface of the substrate, applying a first insulating layer to cover the surface of the substrate and the gates, selectively forming a plurality of gate contact windows at the locations of the gates, selectively forming bit line contact windows in the first insulating layer, the bit line contact windows contacting the substrate, and filling the gate contact windows and the bit line contact windows with a conductive layer.

Abstract: A method for forming a semiconductor device having a trench top isolation layer. A collar insulating layer is formed over a lower portion of the sidewall of the trench formed in a substrate. A first conductive layer is formed in the lower portion of the trench and protrudes the collar insulating layer, and a second conductive layer is formed overlying the first conductive layer and covers the collar insulating layer. An insulating spacer is formed over an upper portion of the sidewall of the trench and separated from the second conductive layer by a gap. The second conductive layer is partially thermally oxidized to form an oxide layer thereon whereby the gap is filled. After the oxide layer is removed, a reverse T-shaped insulating layer is formed thereon by chemical vapor deposition to serve as a trench top isolation layer. Finally, the insulating spacer is removed.

Abstract: A method for forming a semiconductor device having a trench top isolation layer. A collar insulating layer is formed over a lower portion of the sidewall of the trench formed in a substrate. A first conductive layer is formed in the lower portion of the trench and protrudes the collar insulating layer, and a second conductive layer is formed overlying the first conductive layer and covers the collar insulating layer. An insulating spacer is formed over an upper portion of the sidewall of the trench and separated from the second conductive layer by a gap. The second conductive layer is partially thermally oxidized to form an oxide layer thereon whereby the gap is filled. After the oxide layer is removed, a reverse T-shaped insulating layer is formed thereon by chemical vapor deposition to serve as a trench top isolation layer. Finally, the insulating spacer is removed.