Patents by Inventor Feng-Der Chin

Feng-Der Chin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of manufacturing selective emitter solar cell
    Patent number: 8288193
    Abstract: The present disclosure uses ammonia plasma for nitrification and for further forming a barrier pattern on a substrate. Then, a selective emitter is fabricated by forming light doping and heavy doping at one time through diffusion into the substrate. Therein, a plurality of trenches for obtaining a front contact is formed at the same time on forming the barrier pattern. Thus, the fabrication process is simplified and the cost is reduced for fabricating a selective emitter solar cell.
    Type: Grant
    Filed: February 16, 2010
    Date of Patent: October 16, 2012
    Assignee: National Tsing Hua University
    Inventors: Yung-Hsien Wu, Li-Karn Wang, Feng-Der Chin
  • Method of Manufacturing Selective Emitter Solar Cell
    Publication number: 20110081745
    Abstract: The present disclosure uses ammonia plasma for nitrification and for further forming a barrier pattern on a substrate. Then, a selective emitter is fabricated by forming light doping and heavy doping at one time through diffusion into the substrate. Therein, a plurality of trenches for obtaining a front contact is formed at the same time on forming the barrier pattern. Thus, the fabrication process is simplified and the cost is reduced for fabricating a selective emitter solar cell.
    Type: Application
    Filed: February 16, 2010
    Publication date: April 7, 2011
    Inventors: Yung-Hsien Wu, Li-Karn Wang, Feng-Der Chin
  • High-K gate dielectric stack with buffer layer to improve threshold voltage characteristics
    Publication number: 20050224897
    Abstract: A high-K gate dielectric stack for a MOSFET gate structure to reduce Voltage threshold (Vth) shifts and method for forming the same, the method including providing a high-K gate dielectric layer over a semiconductor substrate; forming a buffer dielectric layer on the high-K gate dielectric including a dopant selected from the group consisting of a metal, a semiconductor, and nitrogen; forming a gate electrode layer on the buffer dielectric layer; and, lithographically patterning the gate electrode layer and etching to form a gate structure.
    Type: Application
    Filed: March 26, 2004
    Publication date: October 13, 2005
    Inventors: Shang-Chih Chen, Chih-Hao Wang, Yee-Chia Yeo, Feng-Der Chin, Chuan-Yi Lin
  • Method for forming an epitaxial silicon-germanium layer
    Patent number: 6350311
    Abstract: A method for growing an epitaxial silicon-germanium layer is described. The method includes removing a native oxide layer on the silicon substrate surface. A HF vapor treatment process is then conducted on the silicon substrate. Thereafter, a germanium layer is formed on the silicon substrate, followed by performing a rapid thermal anneal process under an inert gas to form a silicon-germanium alloy layer on the surface of the silicon substrate.
    Type: Grant
    Filed: February 29, 2000
    Date of Patent: February 26, 2002
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Albert Feng-Der Chin, Ming-Jang Hwang