Abstract: A device for real-time detection of pipeline gas leakage and leakage prevention includes a gas pipeline, wherein a gas detector is arranged at an outer part of the gas pipeline, a telescopic cylinder is also electrically connected to an outer side of the gas detector, a plurality of three-way elliptical pipes are mounted at a middle segment part of the gas pipeline, a limiting cylinder is fixedly mounted at a bottom port of each three-way elliptical pipe, a separating mechanism is arranged between each limiting cylinder and the three-way elliptical pipe, and a pneumatic mechanism is arranged at a bottom of the limiting cylinder. After detecting gas leakage, the gas detector immediately triggers the telescopic cylinder through an electrical signal, and the pneumatic mechanism triggers the separating mechanism to separate and seal the three-way elliptical pipe when being driven by the telescopic cylinder.

Abstract: A device for real-time detection of pipeline gas leakage and leakage prevention includes a gas pipeline, wherein a gas detector is arranged at an outer part of the gas pipeline, a telescopic cylinder is also electrically connected to an outer side of the gas detector, a plurality of three-way elliptical pipes are mounted at a middle segment part of the gas pipeline, a limiting cylinder is fixedly mounted at a bottom port of each three-way elliptical pipe, a separating mechanism is arranged between each limiting cylinder and the three-way elliptical pipe, and a pneumatic mechanism is arranged at a bottom of the limiting cylinder. After detecting gas leakage, the gas detector immediately triggers the telescopic cylinder through an electrical signal, and the pneumatic mechanism triggers the separating mechanism to separate and seal the three-way elliptical pipe when being driven by the telescopic cylinder.

Abstract: The present disclosure relates to the technical field of semiconductors, and discloses a semiconductor device and a manufacturing method therefor. The manufacturing method includes: providing a semiconductor structure, where the semiconductor structure includes an active region and a gate structure located in the active region, the gate structure at least including a gate electrode, and the active region exposing an upper surface of the gate electrode; forming a surface insulator layer on the upper surface of the gate electrode; forming a patterned interlayer dielectric layer on the semiconductor structure, where the interlayer dielectric layer covers the surface insulator layer, and has a first through hole exposing a portion of the active region; and forming a conductive contact layer passing through the first through hole and contacting with the active region.

Abstract: The present disclosure relates to the technical field of semiconductors, and discloses a semiconductor device and a manufacturing method therefor. The manufacturing method includes: providing a semiconductor structure, where the semiconductor structure includes an active region and a gate structure located in the active region, the gate structure at least including a gate electrode, and the active region exposing an upper surface of the gate electrode; forming a surface insulator layer on the upper surface of the gate electrode; forming a patterned interlayer dielectric layer on the semiconductor structure, where the interlayer dielectric layer covers the surface insulator layer, and has a first through hole exposing a portion of the active region; and forming a conductive contact layer passing through the first through hole and contacting with the active region.

Abstract: The present disclosure relates to the technical field of semiconductors, and discloses a semiconductor device and a manufacturing method therefor. The manufacturing method includes: providing a semiconductor structure, where the semiconductor structure includes an active region and a gate structure located in the active region, the gate structure at least including a gate electrode, and the active region exposing an upper surface of the gate electrode; forming a surface insulator layer on the upper surface of the gate electrode; forming a patterned interlayer dielectric layer on the semiconductor structure, where the interlayer dielectric layer covers the surface insulator layer, and has a first through hole exposing a portion of the active region; and forming a conductive contact layer passing through the first through hole and contacting with the active region.

Abstract: The present disclosure relates to the technical field of semiconductors, and discloses a semiconductor device and a manufacturing method therefor. The manufacturing method includes: providing a semiconductor structure, where the semiconductor structure includes an active region and a gate structure located in the active region, the gate structure at least including a gate electrode, and the active region exposing an upper surface of the gate electrode; forming a surface insulator layer on the upper surface of the gate electrode; forming a patterned interlayer dielectric layer on the semiconductor structure, where the interlayer dielectric layer covers the surface insulator layer, and has a first through hole exposing a portion of the active region; and forming a conductive contact layer passing through the first through hole and contacting with the active region.