Abstract: The present disclosure provides a privacy computing method based on homomorphic encryption, which includes steps as follows. The ciphertext data is received, where the ciphertext data has a floating-point homomorphic encryption data structure, and the floating-point homomorphic encryption data structure of the ciphertext data includes the ciphertext mantissa, exponent parameter and gain parameter. The gain parameter sets the precision of the floating point corresponding to the ciphertext mantissa. The exponent parameter is adapted to multiplication or division. The artificial intelligence model performs operations on the ciphertext data to return the ciphertext result.

Abstract: The federated learning system includes a moderator and client devices. Each client device performs a method for verifying model update as follows: receiving a hash function and a general model; training a client model according to the general model and raw data; calculating a difference as an update parameter between the general model and the client model, sending the update parameter to the moderator; inputting the update parameter to the hash function to generate a hash value; sending the hash value to other client devices, and receiving other hash values; summing all the hash values to generate a trust value; receiving an aggregation parameter calculated according to the update parameters; inputting the aggregation parameter to the hash function to generate a to-be-verified value; and updating the client model according to the aggregation parameter when the to-be-verified value equals the trust value.

Abstract: A photovoltaic cell structure includes a substrate, a metal layer, a p-type semiconductor layer, an n-type semiconductor layer, a transparent conductive layer and a high resistivity layer. The metal layer is formed on the substrate. The p-type semiconductor layer is formed on the metal layer and may include a compound of copper indium gallium selenium sulfur (CIGSS), copper indium gallium selenium (CIGS), copper indium sulfur (CIS), copper indium selenium (CIS) or a compound of at least two of copper, selenium or sulfur. The n-type semiconductor layer exhibits photo catalyst behavior that can increase carrier mobility by receiving light, and is formed on the p-type semiconductor layer, thereby forming a p-n junction. The transparent conductive layer is formed on the n-type semiconductor layer. The high resistivity layer is formed between the metal layer and the transparent conductive layer.

Abstract: A photovoltaic cell structure includes a substrate, a metal layer, a p-type semiconductor layer, an n-type semiconductor layer, a high resistivity layer, an assistant electrode layer, and a transparent conductive layer. The metal layer is formed on the substrate, and comprises a plurality of p-type electrode units separated from each other. The p-type semiconductor layer is formed on the metal layer. The n-type semiconductor is formed on the p-type semiconductor layer, thereby forming a p-n junction. The high resistivity layer is formed on the n-type semiconductor layer. The assistant electrode layer is formed on the high resistivity layer and the p-type electrode units. The transparent conductive layer is formed on the assistant electrode layer, the high resistivity layer and the p-type electrode units. Accordingly, at least one cell is formed on each of the p-type electrode units. The assistant electrode layer and the transparent conductive layer are connected to the cells in series.

Abstract: A photovoltaic cell structure includes a substrate, a metal layer, a p-type semiconductor layer, an n-type semiconductor layer, a transparent conductive layer and a high resistivity layer. The metal layer is formed on the substrate. The p-type semiconductor layer is formed on the metal layer and may include a compound of copper indium gallium selenium sulfur (CIGSS), copper indium gallium selenium (CIGS), copper indium sulfur (CIS), copper indium selenium (CIS) or a compound of at least two of copper, selenium or sulfur. The n-type semiconductor layer exhibits photo catalyst behavior that can increase carrier mobility by receiving light, and is formed on the p-type semiconductor layer, thereby forming a p-n junction. The transparent conductive layer is formed on the n-type semiconductor layer. The high resistivity layer is formed between the metal layer and the transparent conductive layer.

Abstract: A photovoltaic cell structure includes a substrate, a metal layer, a high resistivity layer, a p-type semiconductor layer, an n-type semiconductor layer and a transparent conductive layer. The metal layer may include molybdenum and be formed on the substrate to be a back contact metal layer of the cell. The high resistivity layer (e.g., V2O5) is formed on the metal layer. The p-type semiconductor layer is formed on the high resistivity layer and may include compound of CIGS or CIS. The n-type semiconductor layer (e.g., CdS) is formed on the p-type semiconductor layer, thereby forming a p-n junction. The transparent conductive layer is formed on the n-type semiconductor layer.

Abstract: A photovoltaic cell structure includes a substrate, a metal layer, a p-type semiconductor layer, an n-type semiconductor layer and a transparent conductive layer. The substrate has a rough surface. The metal layer may include molybdenum and be formed on the rough surface. The p-type semiconductor layer is formed on the metal layer and may include CIGSS, CIGS, CIS, or compound of two or more of copper, selenium, sulfur. The n-type semiconductor layer is formed on the p-type semiconductor layer thereby forming a rough p-n junction surface. The n-type semiconductor layer may include CdS. The transparent conductive layer is formed on the n-type semiconductor layer. In an embodiment, the roughness Ra of the rough surface is between 0.01 to 100 ?m.