Patents by Inventor Feng Fang
Feng Fang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11984633Abstract: The present disclosure provides a phase shifter and an antenna, and relates to the field of communication technology. The phase shifter provided by the embodiment of the present disclosure is divided into a first feeding region, a second feeding region and a phase-shift region. The phase shifter includes: a first substrate and a second substrate provided opposite to each other, a dielectric layer provided between the first substrate and the second substrate, and a first feeding structure and a second feeding structure. The first feeding structure is electrically coupled to one end of the signal line, and the second feeding structure is electrically coupled to the other end of the signal line. The first feeding structure is located in the first feeding region; and the second feeding structure is located in the second feeding region. Recesses are formed in the first base substrate and/or in the second base substrate.Type: GrantFiled: February 26, 2021Date of Patent: May 14, 2024Assignees: Beijing BOE Technology Development Co., Ltd., BOE TECHNOLOGY GROUP CO., LTD.Inventors: Jia Fang, Feng Qu, Xiyuan Wang, Yang Zheng
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Publication number: 20240154145Abstract: A battery end cover mounting device and mounting method, and a battery production line are disclosed. The battery end cover mounting device includes a manipulator; and a rubberizing mechanism provided on a transfer path of an end cover, the rubberizing mechanism being configured for applying a rubber strip between the end cover with a battery which are assembled. The battery production line comprises a manipulator and the battery end cover mounting device above.Type: ApplicationFiled: April 21, 2022Publication date: May 9, 2024Inventors: Feng Wang, Nian Fang, Xuefei Xiong
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Patent number: 11973267Abstract: An antenna includes: a dielectric layer having first and second surfaces opposite to each other; a radiating layer on the first surface, and having therein a slit; a first shielding layer on the second surface, and being electrically connected to the radiating layer; a first insulating layer on an upper side of the radiating layer; and a switch unit on an upper side of the first insulating layer, and corresponding to the slit. Each switch unit includes: a first electrode, a second insulating layer, a connecting portion, and a second electrode on the first insulating layer sequentially. Orthogonal projections of the first and second electrodes on the dielectric layer overlap each other. The connecting portion is connected to the second electrode to form a gap between the first and second electrodes. Orthogonal projections of the second electrode and a corresponding slit on the dielectric layer overlap each other.Type: GrantFiled: January 29, 2021Date of Patent: April 30, 2024Assignees: Beijing BOE Technology Development Co., Ltd., BOE TECHNOLOGY GROUP CO., LTD.Inventors: Chunxin Li, Jia Fang, Yang Zheng, Feng Qu
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Patent number: 11966587Abstract: A method for optimizing a Polar-RNNA quantizer of MLC NAND flash based on deep learning comprises the following steps: Step S1: transforming an MLC flash detection task into a deep learning task, and obtaining three hard-decision read thresholds based on a neural network; Step S2: expanding six soft-decision read thresholds based on the three hard-decision read thresholds; Step S3: constructing an LLR mapping table, and obtaining new LLR information of MLC flash based on the LLR mapping table; Step S4: symmetrizing an MLC flash channel, and performing density evolution; and Step S5: optimizing the soft-decision read thresholds based on a genetic algorithm to obtain an optimal quantization interval. According to the invention, polar codes can be directly used for MLC flash channels without the arduous work of MLC flash channel modeling, so that the reliability of MLC flash is effectively improved.Type: GrantFiled: November 8, 2021Date of Patent: April 23, 2024Assignee: FUZHOU UNIVERSITYInventors: Pingping Chen, Zhen Mei, Yi Fang, Xu Luo, Zhijian Lin, Feng Chen, Riqing Chen
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Publication number: 20240113356Abstract: The disclosure relates to the technical field of traction batteries, and in particular to a battery pack and a vehicle comprising the battery pack. The invention aims at the problem of large heat loss in the existing traction battery in a low-temperature environment. To this end, the battery pack of the disclosure comprises: a frame internally formed with an installation site; a battery module mounted in the installation site and comprising a number of cells; and a side beam connected to an outer side wall of the frame and made of a first thermal insulation material. The above arrangement can reduce the heat transfer coefficient of natural convection between the side wall of the frame and the environment, and reduce the heat flux, thereby reducing the temperature loss of the cells.Type: ApplicationFiled: December 14, 2023Publication date: April 4, 2024Inventors: Xianpeng WANG, Yaping JIANG, Feng LI, Linfeng WANG, Lide ZHU, Jie FANG, Shizhe TZENG
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Publication number: 20240106463Abstract: Aspects of the disclosure relate to wireless communication apparatuses, methods, and other aspects of sliding intermediate frequency filters for carrier aggregation communications. One aspect a high band mixer including a radio frequency (RF) receive signal input, a local oscillator (LO) input, and an IF signal output, a tunable high pass filter including an input and an output, an intermediate frequency (IF) received signal multiplexer including a merged IF CA signal output, a first input, and a second input, an LO input, and an IF signal output, where the RF receive signal input is coupled to the low band mmW CA receive port, and a tunable low pass filter including an input and an output, where the input is coupled to the IF signal output of the low band mixer, and where the output is coupled to the second input of the IF received signal multiplexer.Type: ApplicationFiled: September 23, 2022Publication date: March 28, 2024Inventors: Wu-Hsin CHEN, Yunfei FENG, Vinod PANIKKATH, Li LIU, Sher Jiun FANG
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Publication number: 20240097010Abstract: Doping techniques for fin-like field effect transistors (FinFETs) are disclosed herein. An exemplary method includes forming a fin structure, forming a doped amorphous layer over a portion of the fin structure, and performing a knock-on implantation process to drive a dopant from the doped amorphous layer into the portion of the fin structure, thereby forming a doped feature. The doped amorphous layer includes a non-crystalline form of a material. In some implementations, the knock-on implantation process crystallizes at least a portion of the doped amorphous layer, such that the portion of the doped amorphous layer becomes a part of the fin structure. In some implementations, the doped amorphous layer includes amorphous silicon, and the knock-on implantation process crystallizes a portion of the doped amorphous silicon layer.Type: ApplicationFiled: November 30, 2023Publication date: March 21, 2024Inventors: Sai-Hooi Yeong, Sheng-Chen Wang, Bo-Yu Lai, Ziwei Fang, Feng-Cheng Yang, Yen-Ming Chen
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Publication number: 20240096712Abstract: Provided is a semiconductor device includes a gate electrode, a gate dielectric layer, a channel layer, an insulating layer, a first source/drain electrode and a second source/drain electrode, a second dielectric layer, and a stop segment. The gate electrode is located within a first dielectric layer that overlies a substrate. The gate dielectric layer is located over the gate electrode. The channel layer is located on the gate dielectric layer. The insulating layer is located over the channel layer. The first source/drain electrode and the second source/drain electrode are located in the insulating layer, and connected to the channel layer. The second dielectric layer is beside one of the first source/drain electrode and the second source/drain electrode. The stop segment is embedded in the second dielectric layer.Type: ApplicationFiled: January 10, 2023Publication date: March 21, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yu-Wei Jiang, Chieh-Fang Chen, Yen-Chung Ho, Pin-Cheng Hsu, Feng-Cheng Yang, Chung-Te Lin
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Patent number: 11937426Abstract: The present disclosure provides a semiconductor structure and a method for forming a semiconductor structure. The semiconductor structure includes a substrate, and a dielectric stack over the substrate. The dielectric stack includes a first layer over the substrate and a second layer over the first layer. The semiconductor structure further includes a gate layer including a first portion traversing the second layer and a second portion extending between the first layer and the second layer.Type: GrantFiled: May 3, 2021Date of Patent: March 19, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Feng-Ching Chu, Feng-Cheng Yang, Katherine H. Chiang, Chung-Te Lin, Chieh-Fang Chen
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Publication number: 20240088509Abstract: A battery, a power consuming apparatus, and a method for manufacturing a battery are disclosed. The battery includes a case, at least one row of battery cells, and a support member, where an accommodation space is formed inside the case; the at least one row of battery cells is arranged in the accommodation space, and each row of battery cells includes at least two battery cells arranged opposite each other in a first direction; and the support member extends in the first direction, and two ends of the support member are fixed to the case. The support member is arranged in the case, and an extending direction of the support member is the same as that of one row of battery cells, such that interference between the support member and the battery cell can be avoided. The two ends of the support member are fixed to the case.Type: ApplicationFiled: November 16, 2023Publication date: March 14, 2024Applicant: CONTEMPORARY AMPEREX TECHNOLOGY CO., LIMITEDInventors: Hongye JI, Feng QIN, Peng WANG, Zhi WANG, Runyong HE, Zhengyu FANG
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Publication number: 20240088801Abstract: A fractal power converter and a method for constructing the fractal power converter, the method for constructing the fractal converter including: replacing a switch and/or an energy storage element of an asymmetric half-bridge sub-module with the same asymmetric half-bridge sub-module for at least two times, replacing a switch and/or an energy storage element of a symmetric half-bridge sub-module with the same symmetric half-bridge sub-module for at least two times, and replacing a switch and/or an energy storage element of an H-bridge sub-module with the same H-bridge sub-module for at least two times. Compared with a conventional high-voltage and large-current power converter, the fractal power converter may output any high-voltage and large-current waveform. The system is modularized, the structure is simple and extensible, and voltage and current may be evenly distributed among the modules. The control method is simple and easy to standardize. Multi-port parallel output is allowed.Type: ApplicationFiled: January 17, 2023Publication date: March 14, 2024Applicant: SHANDONG UNIVERSITYInventors: Jingyang FANG, Hongchang LI, Feng GAO, Xu YANG
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Publication number: 20240079775Abstract: The present disclosure provides an antenna device and a manufacturing method therefor, a control method, and an electronic device. The antenna device includes a first and a second substrate structure, and a liquid crystal layer between the first and the second substrate structure. The first substrate structure includes a first substrate and multiple antenna patches. The second substrate structure is on the side of the multiple antenna patches away from the first substrate, and includes a second substrate and a metal layer having multiple gaps. One gap corresponds to one antenna patch, the region where the orthographic projection of each gap on the first substrate overlaps that of the corresponding antenna patch is a first region, the orthographic projection of each gap on the first substrate further includes a second region and a third region, and the third region is located between the second region and the third region.Type: ApplicationFiled: October 29, 2021Publication date: March 7, 2024Applicants: BEIJING BOE TECHNOLOGY DEVELOPMENT CO., LTD., BOE TECHNOLOGY GROUP CO., LTD.Inventors: Yang ZHENG, Jia FANG, Feng QU
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Publication number: 20230398615Abstract: A band saw is disclosed that includes a frame, a guide wheel, and a blade disposed around the guide wheel. A guide wheel chassis can be movably disposed on the frame, the guide wheel rotatably disposed on the guide wheel chassis. The band saw can include a blade tension adjustment assembly including a tensioning motor, wherein operation of the tensioning motor produces movement of the guide wheel chassis and the guide wheel relative to the frame to adjust the tension of the blade. A tension gauge can be positioned to determine a tension in the blade, and a controller can be communicated with the tensioning motor and the tension gauge, the controller operable to receive tension data from the tension gauge and control operation of the tensioning motor based on the tension data to control the tension of the blade.Type: ApplicationFiled: June 13, 2023Publication date: December 14, 2023Inventors: Timothy Gale Birdwell, Jeffery Lee Konkle, Charles Weber, Yi-Feng Fang
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Publication number: 20230403942Abstract: A method for fabricating semiconductor device includes the steps of forming a magnetic tunneling junction (MTJ) stack on a substrate, performing an etching process to remove the MTJ stack for forming a MTJ, performing a deposition process to form a polymer on a sidewall of the MTJ, and removing the polymer to form a rough surface on the sidewall of the MTJ. Preferably, the MTJ could include a pinned layer on the substrate, a barrier layer on the pinned layer, and a free layer on the barrier layer, in which the rough surface could appear on sidewall of the pinned layer, sidewall of the barrier layer, and/or sidewall of the free layer.Type: ApplicationFiled: August 28, 2023Publication date: December 14, 2023Applicant: UNITED MICROELECTRONICS CORP.Inventors: Chia-Wei Liu, Jia-Feng Fang, Chun-Hsien Lin
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Patent number: 11778917Abstract: A method for fabricating semiconductor device includes the steps of forming a magnetic tunneling junction (MTJ) stack on a substrate, performing an etching process to remove the MTJ stack for forming a MTJ, performing a deposition process to form a polymer on a sidewall of the MTJ, and removing the polymer to form a rough surface on the sidewall of the MTJ. Preferably, the MTJ could include a pinned layer on the substrate, a barrier layer on the pinned layer, and a free layer on the barrier layer, in which the rough surface could appear on sidewall of the pinned layer, sidewall of the barrier layer, and/or sidewall of the free layer.Type: GrantFiled: August 4, 2020Date of Patent: October 3, 2023Assignee: UNITED MICROELECTRONICS CORP.Inventors: Chia-Wei Liu, Jia-Feng Fang, Chun-Hsien Lin
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Publication number: 20230148722Abstract: A hybrid frame sleeve case for a portable electronic device is disclosed herein. The portable electronic device may be a laptop computer, a tablet, or another portable electronic device. The case may include flexible panels, such as neoprene or fabric panels, attached to an elastic polymer frame, such as ethylene vinyl acetate (EVA). The elastic polymer frame extends around a perimeter of the sleeve to provide cushioning or padding for the side edges of the sleeve. A magnetic latch or other latch may be used to secure an opening on one side of the sleeve. The case may optionally include a charging system that allows the portable electronic device to be charged while housed in the case or otherwise positioned to allow charging by the charging system.Type: ApplicationFiled: January 3, 2023Publication date: May 18, 2023Applicant: Vinci Brands LLCInventors: Kenji Okada, Hyun Hong, Dominique Velasco Fonacier, Kevin I-Feng Fang
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Patent number: 11648560Abstract: Provided herein, among other aspects, are methods and apparatuses for analyzing particles in a sample. In some aspects, the particles can be analytes, cells, nucleic acids, or proteins and can be contacted with a tag, partitioned into aliquots, detected by a ranking device, and isolated. The methods and apparatuses provided herein may include a microfluidic chip. In some aspects, the methods and apparatuses may be used to quantify rare particles in a sample, such as cancer cells and other rare cells for disease diagnosis, prognosis, or treatment.Type: GrantFiled: August 15, 2018Date of Patent: May 16, 2023Assignees: University of Washnington, Micareo Inc.Inventors: Daniel T. Chiu, Mengxia Zhao, Eleanor S. Shah, Perry G. Schiro, Hui Min Yu, Wei-Feng Fang, Jui-Lin Chen
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Patent number: 11559809Abstract: A method of encapsulating a solid sample in a droplet, the method including flowing a continuous phase through a first fluid channel at a first flow rate; flowing a dispersed phase through a second fluid channel at a second flow rate, the dispersed phase including a plurality of particles, cells or beads; trapping the plurality of particles, cells or beads in a mixing region that receives the dispersed phase and the continuous phase; and reducing the first flow rate to encapsulate the trapped particles, cells or beads in droplets of the dispersed phase generated when the dispersed phase and the continuous phase exit the mixing region through an orifice.Type: GrantFiled: September 16, 2019Date of Patent: January 24, 2023Assignee: The Regents of the University of CaliforniaInventors: Abraham P. Lee, Roger Shih, Wei-Feng Fang, Naiqing Zhang
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Patent number: 11540602Abstract: A hybrid frame sleeve case for a portable electronic device is disclosed herein. The portable electronic device may be a laptop computer, a tablet, or another portable electronic device. The case may include flexible panels, such as neoprene or fabric panels, attached to an elastic polymer frame, such as ethylene vinyl acetate (EVA). The elastic polymer frame extends around a perimeter of the sleeve to provide cushioning or padding for the side edges of the sleeve. A magnetic latch or other latch may be used to secure an opening on one side of the sleeve. The case may optionally include a charging system that allows the portable electronic device to be charged while housed in the case or otherwise positioned to allow charging by the charging system.Type: GrantFiled: November 3, 2020Date of Patent: January 3, 2023Assignee: Vinci Brands LLCInventors: Kenji Okada, Hyun Hong, Dominique Velasco Fonacier, Kevin I-Feng Fang
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Publication number: 20220243310Abstract: The present invention reveals an ultra-thin ultra-high strength steel wire, a wire rod for an ultra-thin ultra-high strength steel wire and its producing method. The chemical components of the wire rod comprise in percentage by mass: C 0.90˜0.96%, Si 0.12˜0.30%, Mn 0.30˜0.65%, Cr 0.10˜0.30%, Al?0.004%, Ti?0.001%, Cu?0.01%, Ni?0.01%, S?0.01%, P?0.01%, O?0.0006%, N?0.0006%, and the balance is Fe and unavoidable impurity elements. The wire rod for the ultra-thin ultra-high strength steel wire may be used as a base material for producing the ultra-thin ultra-high strength steel wire having a diameter in a range of 50˜60 ?m and a tensile strength larger than or equal to 4500 MPa.Type: ApplicationFiled: August 19, 2019Publication date: August 4, 2022Inventors: XIANJUN HU, JINXI FAN, HAN MA, FENG FANG, LONG CHENG